{"title":"Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model","authors":"Hsien-Chie Cheng;Ji-Yuan Syu;He-Hong Wang;Yan-Cheng Liu;Kuo-Shu Kao;Tao-Chih Chang","doi":"10.1109/TDMR.2024.3364695","DOIUrl":null,"url":null,"abstract":"This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100 A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling test (PCT) in accordance with AQG 324. To achieve this goal, a design for reliability (DfR) methodology is established, which couples three-dimensional (3D) thermal computational fluid dynamics (CFD) analysis with 3D transient thermal-mechanical finite element analysis (FEA). The time-dependent viscoplastic behavior of the solder layer is taken into consideration in this FEA by virtue of the Anand model. In addition, a modified physical fatigue lifetime model based on Coffin-Manson formula considering the correlation between a failure criterion and a physical damage characteristic is proposed to effectively estimate the solder fatigue lifetime. The coefficients of the modified physical lifetime model are derived by curve-fitting the experimental solder fatigue lifetime data of a commercial 1.2 kV/25 A SiC power MOSFET module and the corresponding calculated equivalent strain increments using the DfR methodology. The proposed DfR methodology together with the constructed fatigue lifetime model are tested on the prediction of the solder fatigue lifetime of the developed high voltage SiC power module, and their validity are demonstrated by comparing the predicted results with the corresponding PCT experimental results. Finally, parametric analysis is performed to seek a design guideline for enhanced solder fatigue lifetime of the developed SiC power MOSFET module.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 1","pages":"142-153"},"PeriodicalIF":2.5000,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10433689/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100 A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling test (PCT) in accordance with AQG 324. To achieve this goal, a design for reliability (DfR) methodology is established, which couples three-dimensional (3D) thermal computational fluid dynamics (CFD) analysis with 3D transient thermal-mechanical finite element analysis (FEA). The time-dependent viscoplastic behavior of the solder layer is taken into consideration in this FEA by virtue of the Anand model. In addition, a modified physical fatigue lifetime model based on Coffin-Manson formula considering the correlation between a failure criterion and a physical damage characteristic is proposed to effectively estimate the solder fatigue lifetime. The coefficients of the modified physical lifetime model are derived by curve-fitting the experimental solder fatigue lifetime data of a commercial 1.2 kV/25 A SiC power MOSFET module and the corresponding calculated equivalent strain increments using the DfR methodology. The proposed DfR methodology together with the constructed fatigue lifetime model are tested on the prediction of the solder fatigue lifetime of the developed high voltage SiC power module, and their validity are demonstrated by comparing the predicted results with the corresponding PCT experimental results. Finally, parametric analysis is performed to seek a design guideline for enhanced solder fatigue lifetime of the developed SiC power MOSFET module.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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