Atif Alkhazali;Mohammad M. Hamasha;Haitham Khaled;Awni Alkhazaleh;Morad Etier
{"title":"Electro-Mechanical Properties of Molybdenum Thin Film on Polyethylene Terephthalate Subjected to Tensile Stress","authors":"Atif Alkhazali;Mohammad M. Hamasha;Haitham Khaled;Awni Alkhazaleh;Morad Etier","doi":"10.1109/TDMR.2024.3366782","DOIUrl":null,"url":null,"abstract":"Molybdenum chips are vital in manufacturing photovoltaic cells and electronics because they offer a combination of high reliability, corrosion resistance, and exceptional electrical conductivity. These qualities make them suitable for applications demanding these characteristics. This study delves into the behavior of thin molybdenum films deposited on plastic substrates under increasing stress. Films of 100 nm and 200 nm thicknesses were stretched, revealing intricate relationships between crack formation, film thickness, and electrical conductivity. Scanning electron microscopy captured the evolution of cracks, initially forming perpendicular to stress and later branching at roughly 30 degrees, hinting at anisotropic material behavior. Thicker films displayed lower crack density and less branching, highlighting their enhanced stress resistance. Further, secondary cracks short between the original cracks was developed. Percentage change of electrical resistance mirrored this trend, gradually increasing with strain before a sharp spike and eventual disconnection due to crack-induced conductivity loss. Thinner films succumbed to failure at lower strains. These findings offer valuable insights into the design and optimization of molybdenum-based microelectronic devices and sensors, paving the way for further quantitative analysis to fully elucidate the intricate mechanisms at play.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"233-240"},"PeriodicalIF":2.5000,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10438847/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Molybdenum chips are vital in manufacturing photovoltaic cells and electronics because they offer a combination of high reliability, corrosion resistance, and exceptional electrical conductivity. These qualities make them suitable for applications demanding these characteristics. This study delves into the behavior of thin molybdenum films deposited on plastic substrates under increasing stress. Films of 100 nm and 200 nm thicknesses were stretched, revealing intricate relationships between crack formation, film thickness, and electrical conductivity. Scanning electron microscopy captured the evolution of cracks, initially forming perpendicular to stress and later branching at roughly 30 degrees, hinting at anisotropic material behavior. Thicker films displayed lower crack density and less branching, highlighting their enhanced stress resistance. Further, secondary cracks short between the original cracks was developed. Percentage change of electrical resistance mirrored this trend, gradually increasing with strain before a sharp spike and eventual disconnection due to crack-induced conductivity loss. Thinner films succumbed to failure at lower strains. These findings offer valuable insights into the design and optimization of molybdenum-based microelectronic devices and sensors, paving the way for further quantitative analysis to fully elucidate the intricate mechanisms at play.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.