{"title":"Analysis of Multicrystalline Si Solar Cell Improvement Using Laser-Beam-Induced Current Technique","authors":"T. Takeshita;E. Murakami","doi":"10.1109/TDMR.2024.3367353","DOIUrl":null,"url":null,"abstract":"The improvement of an mc-Si solar cell through reverse bias and high temperature (BT) aging was investigated using laser beam-induced current (LBIC) and electroluminescence (EL) techniques. We demonstrated that the dark current of the cell decreased with increasing aging time, which led to an increase in the maximum power after BT aging. The improvement in the maximum power was presumed to be due to a reduction in the shunt current in the equivalent circuit model, and we found that the recombination centers in the vicinity of the surface decreased with BT aging. Applying a reverse bias and a high temperature successfully improved the solar cells.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"219-224"},"PeriodicalIF":2.5000,"publicationDate":"2024-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10440146/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The improvement of an mc-Si solar cell through reverse bias and high temperature (BT) aging was investigated using laser beam-induced current (LBIC) and electroluminescence (EL) techniques. We demonstrated that the dark current of the cell decreased with increasing aging time, which led to an increase in the maximum power after BT aging. The improvement in the maximum power was presumed to be due to a reduction in the shunt current in the equivalent circuit model, and we found that the recombination centers in the vicinity of the surface decreased with BT aging. Applying a reverse bias and a high temperature successfully improved the solar cells.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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