{"title":"Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously","authors":"Bingyue Cui, Jie Yang, Xingfa Gao, Jiaheng He, Zhe Liu, Zhe Cheng, Yun Zhang","doi":"10.1088/1361-6641/ad238b","DOIUrl":null,"url":null,"abstract":"This work demonstrated a deep-ultraviolet (DUV) LED with an Al-graded p-AlGaN contact layer above the electron blocking layer to alleviate p-type contact resistance, the asymmetry of carriers transport, and the polarization effect. The fitting results from the ABC + f(n) model revealed that the LED has a higher radiative recombination coefficient than the conventional structures ever reported, which contributes to a lower carrier lifetime. The light output power of the LED at 350 mA is 44.71 mW, the peak external quantum efficiency (EQE) at 22.5 mA is 5.12%, the wall-plug efficiency at 9 mA is 4.40%. The 3 dB electrical-to-optical modulation bandwidth of the graded p-AlGaN contact layer LED is 390 MHz after impedance matching. In short, this study provides an in-depth analysis of the physical mechanism of the enhanced EQE and decreased carrier lifetime of DUV LEDs with Al-graded AlGaN as a p-type contact layer.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"25 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad238b","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work demonstrated a deep-ultraviolet (DUV) LED with an Al-graded p-AlGaN contact layer above the electron blocking layer to alleviate p-type contact resistance, the asymmetry of carriers transport, and the polarization effect. The fitting results from the ABC + f(n) model revealed that the LED has a higher radiative recombination coefficient than the conventional structures ever reported, which contributes to a lower carrier lifetime. The light output power of the LED at 350 mA is 44.71 mW, the peak external quantum efficiency (EQE) at 22.5 mA is 5.12%, the wall-plug efficiency at 9 mA is 4.40%. The 3 dB electrical-to-optical modulation bandwidth of the graded p-AlGaN contact layer LED is 390 MHz after impedance matching. In short, this study provides an in-depth analysis of the physical mechanism of the enhanced EQE and decreased carrier lifetime of DUV LEDs with Al-graded AlGaN as a p-type contact layer.
这项研究展示了一种深紫外（DUV）发光二极管，该发光二极管在电子阻挡层上方采用了铝级p-AlGaN接触层，以减轻p型接触电阻、载流子传输的不对称性和极化效应。ABC + f(n) 模型的拟合结果表明，该 LED 的辐射重组系数比以往报道的传统结构更高，从而导致载流子寿命更短。该 LED 在 350 mA 时的光输出功率为 44.71 mW，22.5 mA 时的峰值外部量子效率 (EQE) 为 5.12%，9 mA 时的壁插效率为 4.40%。阻抗匹配后，渐变 pAlGaN 接触层 LED 的 3 dB 电-光调制带宽为 390 MHz。总之，本研究深入分析了采用铝分级 AlGaN 作为 p 型接触层的 DUV LED 的 EQE 增强和载流子寿命降低的物理机制。
期刊介绍：
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.
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