{"title":"The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs","authors":"Youcai Deng, Jinlan Chen, Saijun Li, He Huang, Zhong Liu, Zijun Yan, Shouqiang Lai, Lijie Zheng, Tianzhi Yang, Zhong Chen, Tingzhu Wu","doi":"10.1088/1361-6641/ad2b0a","DOIUrl":null,"url":null,"abstract":"In this study, we fabricated 76 × 127 <italic toggle=\"yes\">µ</italic>m<sup>2</sup> green GaN-based micro-light-emitting-diodes (micro-LEDs) with atomic-layer-deposited (ALD) SiO<sub>2</sub> passivation layers whose thicknesses were 0, 15, and 100 nm. The optoelectrical and communication performances of these devices were measured and analysed. The current-voltage results showed that ALD technology reduced the leakage current and enhanced the forward current of micro-LEDs. Compared with those of micro-LEDs without the passivation layer, the external quantum efficiency of micro-LEDs with 15 and 100 nm-thick SiO<sub>2</sub> passivation layers increased by 23.64% and 19.47%, respectively. Furthermore, analysis of the EQE of the samples at room temperature using the ABC + <italic toggle=\"yes\">f</italic>(n) model revealed the differences in the physical mechanisms of green micro-LEDs. Moreover, the communication performance indicated that ALD sidewall passivation reduced the carrier lifetime and improved the communication performance of green micro-LEDs.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad2b0a","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we fabricated 76 × 127 µm2 green GaN-based micro-light-emitting-diodes (micro-LEDs) with atomic-layer-deposited (ALD) SiO2 passivation layers whose thicknesses were 0, 15, and 100 nm. The optoelectrical and communication performances of these devices were measured and analysed. The current-voltage results showed that ALD technology reduced the leakage current and enhanced the forward current of micro-LEDs. Compared with those of micro-LEDs without the passivation layer, the external quantum efficiency of micro-LEDs with 15 and 100 nm-thick SiO2 passivation layers increased by 23.64% and 19.47%, respectively. Furthermore, analysis of the EQE of the samples at room temperature using the ABC + f(n) model revealed the differences in the physical mechanisms of green micro-LEDs. Moreover, the communication performance indicated that ALD sidewall passivation reduced the carrier lifetime and improved the communication performance of green micro-LEDs.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.