Enhanced Magnetic Field Sensing With MAGNC-FinFET: A Current Mode Hall Effect Approach

Abstract

This research paper introduces a novel magnetic sensing device named MAGNC-FinFET, which utilizes the conventional NC-FinFET structure as its foundation. This device is capable of measuring vertical magnetic fields through the incorporation of two contacts positioned on either side of the drain. The operating principle relies on the current mode of the Hall effect, leading to the diversion of drain currents at both contact points. By introducing a magnetic field oriented in the positive y-direction and maintaining a bias of 300 μA in the drain current, magnetic measurements are obtained. Furthermore, the influence of the fin width on the device's characteristics and sensitivity has been thoroughly examined. The investigation reveals a proportional increase in both differential currents and relative sensitivity as the fin width parameter is augmented. The paper also presents an extensive review of relevant prior research, highlighting the remarkable qualities of the MAGNC-FinFET as an exceptional magnetic sensor with significantly enhanced sensitivity. This magnetic sensing device based on NC-FinFET shows significant promise as a leading contender for the forthcoming generation of integrated circuits designed for magnetic sensitivity.