Impact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films

IF 6.7 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Science: Advanced Materials and Devices Pub Date : 2024-03-01 DOI:10.1016/j.jsamd.2024.100698

Gerard Masmitjà , Pau Estarlich , Gema Lopez , Isidro Martín , Cristobal Voz , Marcel Placidi , Arnau Torrens , Edgardo Saucedo Silva , Pia Vasquez , Delfina Muñoz , Joaquim Puigdollers , Pablo Ortega

{"title":"Impact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films","authors":"Gerard Masmitjà , Pau Estarlich , Gema Lopez , Isidro Martín , Cristobal Voz , Marcel Placidi , Arnau Torrens , Edgardo Saucedo Silva , Pia Vasquez , Delfina Muñoz , Joaquim Puigdollers , Pablo Ortega","doi":"10.1016/j.jsamd.2024.100698","DOIUrl":null,"url":null,"abstract":"<div><p>This work highlights the impact of growth temperature on the electrical and optical properties of Al-doped ZnO (AZO) films deposited by the atomic layer deposition (ALD) technique. The ALD process and super-cycle sequence have been optimized, identifying their influence on film resistivity. By using this optimum ALD procedure, the optical and electrical properties of AZO films have been widely analyzed considering the deposition temperature. Results show promising values with film resistivity in the range of 1 mΩcm and average optical absorption below 2% for 50 nm thick AZO layers. Hall effect, X-ray diffraction and ellipsometry measurements point out that these excellent values are related to their high carrier concentration and mobility, crystalline phase and optical band gap, resulting in ALD AZO films with excellent properties to be applied in photovoltaic devices as transparent conductive oxide electrode.</p></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":null,"pages":null},"PeriodicalIF":6.7000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2468217924000297/pdfft?md5=0b52c7b6dd1f1493b85a12a92d4cf6c5&pid=1-s2.0-S2468217924000297-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Science: Advanced Materials and Devices","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468217924000297","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

This work highlights the impact of growth temperature on the electrical and optical properties of Al-doped ZnO (AZO) films deposited by the atomic layer deposition (ALD) technique. The ALD process and super-cycle sequence have been optimized, identifying their influence on film resistivity. By using this optimum ALD procedure, the optical and electrical properties of AZO films have been widely analyzed considering the deposition temperature. Results show promising values with film resistivity in the range of 1 mΩcm and average optical absorption below 2% for 50 nm thick AZO layers. Hall effect, X-ray diffraction and ellipsometry measurements point out that these excellent values are related to their high carrier concentration and mobility, crystalline phase and optical band gap, resulting in ALD AZO films with excellent properties to be applied in photovoltaic devices as transparent conductive oxide electrode.

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原子层沉积温度对氧化锌：铝薄膜电学和光学特性的影响

这项研究强调了生长温度对通过原子层沉积（ALD）技术沉积的铝掺杂氧化锌（AZO）薄膜的电学和光学特性的影响。对 ALD 工艺和超循环序列进行了优化，确定了它们对薄膜电阻率的影响。通过使用这种最佳 ALD 程序，考虑到沉积温度，对 AZO 薄膜的光学和电学特性进行了广泛分析。结果显示，薄膜电阻率在 1 mΩcm 范围内，50 nm 厚的 AZO 层的平均光吸收率低于 2%。霍尔效应、X 射线衍射和椭偏仪测量结果表明，这些优异的数值与其高载流子浓度和迁移率、结晶相和光带隙有关，因此 ALD AZO 薄膜具有非常好的特性，可作为透明导电氧化物电极应用于光伏设备中。

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来源期刊

Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

11.90

自引率

2.50%

发文量

审稿时长

47 days

期刊介绍： In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.