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A novel carbon quantum dot (CQD) synthesis method with cost-effective reactants and a definitive indication: Hot bubble synthesis (HBBBS) 一种新型的碳量子点 (CQD) 合成方法,其反应物具有成本效益,并有明确的指示:热气泡合成法(HBBBS)
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-24 DOI: 10.1016/j.jsamd.2024.100797
Beste Dipcin , Bora Guvendiren , Selcuk Birdogan , Bukem Tanoren
Carbon quantum dots (CQDs) are carbon-based biocompatible quantum dots that have low toxicity, are more soluble in water, have broad application areas, and the surface modification of these can be performed easily. In this study, we present a new CQD synthesis method with cost-effective reactants that can be easily found in laboratories are used. Besides, there is a definitive indication (bubble) for CQD production, unlike the other methods in the literature. The purification method of the CQDs was also optimized in this study. In the beginning of the synthesis, 3 times centrifugation (x3 CF) of the mixture was performed and the optimization of the purification method indicated that x3 CF before 3 days of dialysis membrane tubing (x3 CF & 3 DM) resulted in the formation of the purest CQDs. The characterization of the CQDs was done utilizing UV–VIS spectrophotometer, Fourier Transfer Infrared Spectroscopy (FT-IR), Zetasizer, fluorescence microscopy, Dynamic Light Scattering (DLS), Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS), and Transmission Electron Microscopy (TEM). It was concluded that the CQD formation depended on the mixing of sulphuric acid:acetone (2:1) ratio in a hot (140–165 °C) and an inert environment, and bubble coverage of the mixture surface (30–60 s). The bubble formation due to the reaction between sulphuric acid and pure acetone at high temperatures gives the developed method’s name of “Hot Bubble Synthesis” (HBBBS).
碳量子点(CQDs)是一种碳基生物相容性量子点,具有毒性低、水溶性强、应用领域广泛等特点,而且其表面修饰也很容易进行。在本研究中,我们提出了一种新的 CQD 合成方法,并使用了实验室中很容易找到的高性价比反应物。此外,与文献中的其他方法不同,该方法有明确的 CQD 生成指示(气泡)。本研究还优化了 CQD 的纯化方法。在合成初期,对混合物进行了 3 次离心(x3 CF),纯化方法的优化结果表明,在透析膜管(x3 CF & 3 DM)透析 3 天前进行 x3 CF 可形成最纯净的 CQD。利用紫外可见分光光度计(UV-VIS)、傅立叶红外光谱仪(FT-IR)、Zetasizer、荧光显微镜、动态光散射(DLS)、扫描电子显微镜(SEM)、能量色散光谱仪(EDS)和透射电子显微镜(TEM)对 CQDs 进行了表征。结果表明,CQD 的形成取决于硫酸与丙酮(2:1)在高温(140-165 °C)和惰性环境下的混合以及混合物表面的气泡覆盖(30-60 秒)。由于硫酸和纯丙酮在高温下发生反应而形成气泡,因此所开发的方法被命名为 "热气泡合成法"(HBBBS)。
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引用次数: 0
Harnessing ambient sound: Different approaches to acoustic energy harvesting using triboelectric nanogenerators 利用环境声音:利用三电纳米发电机采集声能的不同方法
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-24 DOI: 10.1016/j.jsamd.2024.100805
Fandi Jean , Muhammad Umair Khan , Anas Alazzam , Baker Mohammad
As a sustainable energy source, sound is abundant in the environment, but its effective conversion into electrical energy remains a technical challenge. Triboelectric nanogenerators (TENGs) have made significant progress in addressing this issue, enabling the efficient capture of low-frequency sound waves and their transformation into usable power. This review explores the core principles behind acoustic energy harvesting using TENGs and examines key advancements in materials and resonator designs, including Helmholtz and quarter-wavelength configurations, which enhance energy conversion. Recent breakthroughs in TENG technologies are also highlighted, focusing on specialized mechanisms and innovative structural designs that improve sound wave collection and energy transfer. The review also looks into the various applications of TENGs, including harnessing urban noise, enhancing voice recognition systems, and powering wearable devices. Finally, challenges and future directions for expanding the use of acoustic energy harvesting technologies are discussed,focusing on their potential to provide practical and scalable energy solutions for various applications.
作为一种可持续能源,声音在环境中含量丰富,但将其有效转化为电能仍是一项技术挑战。三电纳米发电机(TENGs)在解决这一问题方面取得了重大进展,能够有效捕捉低频声波并将其转化为可用电能。这篇综述探讨了使用 TENGs 收集声能背后的核心原理,并研究了材料和谐振器设计方面的主要进展,包括能增强能量转换的赫尔姆霍兹和四分之一波长配置。此外,还重点介绍了最近在 TENG 技术方面取得的突破,重点关注可改善声波收集和能量传递的专门机制和创新结构设计。综述还探讨了 TENG 的各种应用,包括利用城市噪音、增强语音识别系统和为可穿戴设备供电。最后,还讨论了扩大声能收集技术应用的挑战和未来方向,重点关注其为各种应用提供实用、可扩展的能源解决方案的潜力。
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引用次数: 0
Pt/ZnO and Pt/few-layer graphene/ZnO Schottky devices with Al ohmic contacts using Atlas simulation and machine learning 利用 Atlas 仿真和机器学习技术实现带有铝欧姆触点的 Pt/ZnO 和 Pt/ 少层石墨烯/ZnO 肖特基器件
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-19 DOI: 10.1016/j.jsamd.2024.100798
Shonak Bansal , Abha Kiran Rajpoot , G. Chamundeswari , Krishna Prakash , Parvataneni Rajendra Kumar , Ahmed Nabih Zaki Rashed , Mohamed S. Soliman , Mohammad Tariqul Islam
The search for highly efficient photodetectors, driven by various applications ranging from environmental monitoring to communication systems and imaging, continues to drive research into novel materials and innovative device architectures. This paper offers an in-depth comparative analysis to optimize the performance of two types of Schottky ultraviolet (UV) photodetectors: platinum (Pt)/zinc oxide (ZnO) and Pt/few-layer graphene (FLG)/ZnO, both featuring aluminum (Al) ohmic contacts. The study systematically examines and compares the electrical and optical characteristics of these two photodetector configurations using the Silvaco TCAD simulation tool and machine learning regression models. The research outcomes demonstrate that the proposed photodetector configurations exhibit remarkable improvements, showcasing their substantial potential for superior performance in UV applications. The Pt/ZnO photodetector demonstrates a dark current density of 8.2 × 10−11 pA/cm2, a photocurrent density of 0.26 μA/cm2, a 3-dB cut-off frequency of 85.4 GHz, an external quantum efficiency of 90.41%, and an external photocurrent responsivity of 0.26A/W, at a bias of −1.0 V. On the other hand, Pt/FLG/ZnO photodetector demonstrates near zero dark current density, a photocurrent density of 0.2 μA/cm2, a 3-dB cut-off frequency of 2.44 THz, an external quantum efficiency of 68.52%, and an external photocurrent responsivity of 0.2 A/W at a bias of −1.0 V. Furthermore, a comprehensive comparative analysis of various machine-learning regression models is conducted, validating the simulation findings and providing a predictive framework for optimizing the photodetector's performance. Each machine-learning regression model is evaluated by getting root mean squared error and R2 values across different test set sizes to assess their accuracy in predicting the photodetector's characteristics. This study underscores the promising role of cutting-edge materials and computational techniques in advancing the development of next-generation optoelectronic devices with enhanced capabilities and performance.
在从环境监测到通信系统和成像等各种应用的推动下,对高效光电探测器的探索继续推动着对新型材料和创新器件结构的研究。本文通过深入的比较分析,优化了两种类型的肖特基紫外线(UV)光电探测器的性能:铂(Pt)/氧化锌(ZnO)和铂/少层石墨烯(FLG)/ZnO,两者均采用铝(Al)欧姆触点。该研究利用 Silvaco TCAD 仿真工具和机器学习回归模型,系统地研究和比较了这两种光电探测器配置的电气和光学特性。研究结果表明,所提出的光电探测器配置具有显著的改进,展示了其在紫外应用中实现卓越性能的巨大潜力。Pt/ZnO 光电探测器的暗电流密度为 8.2 × 10-11 pA/cm2,光电流密度为 0.26 μA/cm2,3 分贝截止频率为 85.4 GHz,外部量子效率为 90.41%,外部光电流响应率为 0.26A/W(偏压为 -1.0 V)。另一方面,Pt/FLG/氧化锌光电探测器的暗电流密度接近零,光电流密度为 0.2 μA/cm2,3-dB 截止频率为 2.44 THz,外部量子效率为 68.52%,外部光电流响应率为 0.2 A/W(偏压为 -1.0 V)。此外,还对各种机器学习回归模型进行了全面的比较分析,从而验证了模拟结果,并为优化光电探测器的性能提供了一个预测框架。每个机器学习回归模型都通过不同测试集大小的均方根误差和 R2 值进行评估,以评估其预测光电探测器特性的准确性。这项研究强调了前沿材料和计算技术在推动具有更强功能和性能的下一代光电器件开发中的重要作用。
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引用次数: 0
Photothermal impacts induced by laser pulse in a 2D semiconducting medium with temperature-dependent properties under strain–temperature rate-dependent theory 在应变-温度-速率依赖理论下,激光脉冲在具有温度依赖特性的二维半导体介质中诱导的光热影响
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-18 DOI: 10.1016/j.jsamd.2024.100799
Ismail M. Tayel, Mogtaba Mohammed
The purpose of this research is to introduce a new model for studying the photothermal process in a 2D semiconducting material with temperature-dependent properties using the recently modified Green and Lindsay theory. The surface absorption fashion generated by a laser pulse is used to heat a medium whose surface is subjected to cooling impact and considered traction free. The integral transformation method is used to attain a general solution via Fourier and Laplace transforms, and the inverse Laplace transform is performed numerically using Riemann sum approximation. A silicon element is utilized to get findings that are graphically displayed as an application in which the consistency of outcomes may be deduced.
本研究的目的是引入一个新模型,利用最近修正的格林和林赛理论研究具有温度依赖特性的二维半导体材料中的光热过程。激光脉冲产生的表面吸收时尚用于加热表面受到冷却冲击并被视为无牵引的介质。使用积分变换法通过傅里叶变换和拉普拉斯变换获得一般解,并使用黎曼和近似值对反拉普拉斯变换进行数值计算。利用硅元素得出结论,并以图形显示应用,从而推导出结果的一致性。
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引用次数: 0
Comparative analysis of microlens array formation in fused silica glass by laser: Femtosecond versus picosecond pulses 激光在熔融石英玻璃中形成微透镜阵列的比较分析:飞秒脉冲与皮秒脉冲的比较
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-18 DOI: 10.1016/j.jsamd.2024.100804
Laimis Zubauskas, Edgaras Markauskas, Arnas Vyšniauskas, Valdemar Stankevič, Paulius Gečys
The growing demand for flexible, high-quality fabrication of free-form micro-optics drives the development of laser-based fabrication techniques for both the shape formation and surface polishing of optical elements. In this paper, we performed a thorough and systematic study on fused silica glass ablation using 10 ps and 320 fs duration pulses. Ablation processes for both pulse durations were optimized based on the measurements of the removed material layer thickness and surface roughness, and by analyzing the topographies of ablated cavities to remove material layers as thin as possible with minimum surface damage. Our findings demonstrate higher process resolution and surface quality for femtosecond pulses. Ablation of pre-roughened glass reduced the minimal removable glass layer thickness well below the 1 μm mark for both pulse durations, improving the process resolution. The minimal removable glass layer thickness was 14 times smaller for the femtosecond pulses, with up to 4.5 times lower surface roughness compared to samples processed with picosecond pulses. On the other hand, results revealed faster glass removal rates with picosecond pulses. In the end, arrays of microlenses were fabricated with both pulse durations and subsequently polished with a CO2 laser. Results revealed higher performance of microlenses fabricated with femtosecond pulses, providing better focusing capabilities and lesser beam scattering. Finally, this study demonstrated the successful fabrication of free-form optical elements with femtosecond and picosecond pulses, demonstrating the versatility and the potential of laser-based techniques.
对灵活、高质量地制造自由形态微光学器件的需求日益增长,推动了基于激光的光学元件形状形成和表面抛光制造技术的发展。在本文中,我们使用 10 ps 和 320 fs 持续时间脉冲对熔融石英玻璃烧蚀进行了全面系统的研究。根据对去除的材料层厚度和表面粗糙度的测量结果,并通过分析烧蚀腔的形貌,对这两种脉冲持续时间的烧蚀过程进行了优化,以去除尽可能薄的材料层,同时将表面损伤降到最低。我们的研究结果表明,飞秒脉冲具有更高的工艺分辨率和表面质量。在两种脉冲持续时间下,对预粗化玻璃的烧蚀都能将最小可去除玻璃层厚度大大降低到 1 微米以下,从而提高了工艺分辨率。与使用皮秒脉冲处理的样品相比,飞秒脉冲的最小可去除玻璃层厚度减少了 14 倍,表面粗糙度降低了 4.5 倍。另一方面,结果显示皮秒脉冲的玻璃去除率更快。最后,用这两种脉冲持续时间制作了微透镜阵列,然后用二氧化碳激光器进行抛光。结果显示,使用飞秒脉冲制造的微透镜性能更高,聚焦能力更强,光束散射更少。最后,这项研究成功地利用飞秒和皮秒脉冲制作了自由形态光学元件,展示了激光技术的多功能性和潜力。
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引用次数: 0
LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications 用于未来电力电子应用的 LG = 50 nm T 门控和掺 Fe 双量子阱氮化镓-HEMT,基于碳化硅晶圆和分级氮化镓势垒
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-11 DOI: 10.1016/j.jsamd.2024.100795
B. Mounika , J. Ajayan , Sandip Bhattacharya , D. Nirmal , Amit Krishna Dwivedi
High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure developed on a SiC substrate and the clear double hump feature of the transconductance (GM), cut-off frequency (fT), and capacitance plots clearly illustrates the double-channel (DC) behavior. The investigations carried out to explore the impact of barrier thickness (both AlN & graded-AlGaN) revealed superior performance with the GM showing two peaks at 181.5 & 488.1 mS/mm, the peak-drive-current (ID_peak) with VGS biased at 3 V is 1.81 A/mm, maximum saturation drain current of 3.08 A/mm (VGS = 3V), and the fT derived from the left- and right-hump are 263.7 GHz & 354.2 GHz, respectively, when both barriers are 6 nm thin, attributable to enhanced 2DEG density due to the coordination of channels because of proximity and lower leakage. It has been noticed that when the bottom barrier is thick, the DC behaviour is less obvious due to insufficient gate access to the lower channel. We investigated the impact of varying the Al % in AlGaN top barrier on the DC/RF performance of GDC-HEMTs, demonstrating enhanced performance with increased Al content, particularly for Al0.35Ga0.65N. By using various metals, this study also investigates how gate engineering affects the electrical characteristics of the GDC-HEMT. The lower ϕm (work function) of the Al-gate led to better DC/RF performance. When the Schottky barrier rises as a result of the conduction band edge being elevated, the performance reduces, and the threshold voltage (Vth) increases. Since it is essential to comprehend the role that source resistance (Rs) & drain resistance (Rd) play in RF design, we have also conducted simulations by varying the source-gate gap (LGS) & drain-gate gap (LGD). Due to low Rs & Rd, it was determined that the GDC-HEMT performed better at the smallest LGS & LGD. The extraordinary performance strongly highlights the immense potential and applicability of the GDC-HEMTs for future broadband power amplifiers.
设计并研究了具有 AlN 顶部势垒、凹陷 T 形栅极和渐变 AlGaN 底部势垒的高性能 LG = 50 nm 渐变双通道 (GDC) -HEMT。在碳化硅衬底上开发的 AlN-GaN 分级 AlGaN-GaN 多层结构中形成了两个量子阱,其跨导 (GM)、截止频率 (fT) 和电容图的明显双驼峰特征清楚地说明了双通道 (DC) 行为。为探索势垒厚度(AlNamp 和分级 AlGaN)的影响而进行的研究显示,GM 在 181.5 和 488.1 mS/mm 处显示出两个峰值,VGS 偏压为 3 V 时的峰值驱动电流(ID_peak)为 1.81 A/mm,最大饱和漏极电流为 3.08 A/mm(VGS = 3 V)。08 A/mm (VGS = 3V),而当两个势垒都为 6 nm 薄时,从左驼峰和右驼峰得出的 fT 分别为 263.7 GHz & 354.2 GHz,这归因于通道的协调性和较低的漏电,从而提高了 2DEG 密度。我们注意到,当底部势垒较厚时,由于栅极进入下部沟道的通道不足,直流行为不太明显。我们研究了改变 AlGaN 顶部势垒中的铝含量对 GDC-HEMT 的直流/射频性能的影响,结果表明,随着铝含量的增加,特别是 Al0.35Ga0.65N 的铝含量增加,其性能会有所提高。通过使用各种金属,本研究还探讨了栅极工程如何影响 GDC-HEMT 的电气特性。铝栅极的jm(功函数)越低,直流/射频性能越好。当肖特基势垒因导带边缘升高而上升时,性能就会降低,阈值电压 (Vth) 就会升高。由于理解源极电阻(Rs)和漏极电阻(Rd)在射频设计中的作用至关重要,我们还通过改变源极-栅极间隙(LGS)和漏极-栅极间隙(LGD)进行了模拟。由于 Rs & Rd 较低,我们确定 GDC-HEMT 在最小的 LGS & LGD 时性能更好。非凡的性能有力地证明了 GDC-HEMT 在未来宽带功率放大器中的巨大潜力和适用性。
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引用次数: 0
A study on the manufacture of CNT composites bipolar plate for the fuel cell using a nanosecond pulsed laser 使用纳秒脉冲激光制造燃料电池用碳纳米管复合材料双极板的研究
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-10 DOI: 10.1016/j.jsamd.2024.100803
Seungeun Baek , Dongkyoung Lee
The channels of the graphite-based bipolar plate for hydrogen fuel cells were mainly manufactured through milling due to low forming elongation and processability. However, during the milling process, the machining precision is low due to tool wear and vibration, and there is a risk of breakage. Non-traditional laser processing can solve the problems of tool wear and vibration through non-contact processing. In this study, the interaction characteristics of the nanosecond pulsed laser and CNT composites were observed, and channels and bipolar plates were manufactured. The effect of scanning speed and pulse duration was observed for interaction characteristics. Defects were observed due to high thermal effects at low scanning speed and high pulse duration. Channels were created depending on parallel pitch distance [ΔS] and Number of Scans (NOS). The channel was evaluated for depth, top width, bottom width, channel angle, material removal rate, and surface roughness, and significant changes were observed depending on ΔS. The chemical composition, surface resistance, and contact angle of the laser-processed channel were measured. The laser processed channel was oxidized, and the surface resistance and contact angle increased. Finally, the manufacturability of the CNT composites bipolar plate using laser was examined.
用于氢燃料电池的石墨基双极板的通道由于成型伸长率低且易于加工,主要通过铣削加工制造。然而,在铣削过程中,由于刀具磨损和振动,加工精度较低,且存在破损风险。非传统激光加工可以通过非接触加工解决刀具磨损和振动问题。本研究观察了纳秒脉冲激光与 CNT 复合材料的相互作用特性,并制造了通道和双极板。观察了扫描速度和脉冲持续时间对相互作用特性的影响。在低扫描速度和高脉冲持续时间下,由于高热效应,出现了缺陷。根据平行间距[ΔS]和扫描次数(NOS)制作通道。对通道的深度、顶宽、底宽、通道角度、材料去除率和表面粗糙度进行了评估,并观察到ΔS的显著变化。测量了激光加工通道的化学成分、表面电阻和接触角。激光加工通道被氧化,表面电阻和接触角增大。最后,研究了使用激光加工 CNT 复合材料双极板的可制造性。
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引用次数: 0
Unveiling the potential of decorating tunable morphology of bismuth sulfide nanostructures on the Bi2WO6 nanosheets for enhanced photoelectrochemical performance 揭示在 Bi2WO6 纳米片上装饰可调硫化铋纳米结构形态的潜力,以提高光电化学性能
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-10 DOI: 10.1016/j.jsamd.2024.100800
Yuan-Chang Liang, Chun-Hsi Yang
In this study, we used different sulfur sources (thiourea and sodium sulfide) in the hydrothermal vulcanization to create two types of Bi2S3/Bi2WO6 composite materials with different structures. We varied the vulcanization duration to control the degree of vulcanization of the samples. The composites made with sodium sulfide displayed a mix of particles and nanosheets, while those made with thiourea showed nanowires and nanosheets. The choice of sulfur source had a significant impact on the structural characteristics of the composite material. In photoelectrochemical experiments (PEC), the vulcanization-treated Bi2S3/Bi2WO6 composites improved significantly compared to the pristine Bi2WO6 template. In particular, the Bi2S3/Bi2WO6 composite prepared using sodium sulfide precursor for 4 h exhibited the best photocurrent density and the lowest charge transfer interface resistance. The improved performance is attributed to the suitable defect density and a Z-scheme mechanism facilitated by the built-in electric field at the interface, which effectively separated photogenerated carriers, increasing active species and significantly improving the composites' efficiency in PEC reactions.
在本研究中,我们在水热硫化过程中使用了不同的硫源(硫脲和硫化钠),从而制备出两种具有不同结构的 Bi2S3/Bi2WO6 复合材料。我们改变硫化持续时间来控制样品的硫化程度。用硫化钠制成的复合材料显示出颗粒和纳米片的混合结构,而用硫脲制成的复合材料则显示出纳米线和纳米片的混合结构。硫源的选择对复合材料的结构特性有重大影响。在光电化学实验(PEC)中,硫化处理过的 Bi2S3/Bi2WO6 复合材料与原始 Bi2WO6 模板相比有显著改善。特别是,使用硫化钠前驱体硫化 4 小时制备的 Bi2S3/Bi2WO6 复合材料表现出最佳的光电流密度和最低的电荷转移界面电阻。性能的提高归功于合适的缺陷密度和界面内置电场促进的 Z 型机制,它们有效地分离了光生载流子,增加了活性物种,显著提高了复合材料在 PEC 反应中的效率。
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引用次数: 0
Design optimization of a phase-change capacitive sensor for irreversible temperature threshold monitoring and its eco-friendly and wireless implementation 用于不可逆温度阈值监测的相变电容式传感器的优化设计及其环保和无线实施
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-10 DOI: 10.1016/j.jsamd.2024.100794
James Bourely, Danick Briand
Monitoring the temperature of perishable goods during transport and storage is essential to prevent waste and maintain product quality. Exploiting the unique property of phase-change materials (PCM), altering their physical state at specific temperatures, we optimize a capacitive sensor design based on a copper on polyimide interdigitated spiral (IDE) structure coated with a PCM to irreversibly detect temperature thresholds. The effect of the sensor dimensioning on its response is analyzed using a finite element model simulation. The model predicted up to 51% capacitance variation for optimal coverage of the PCM after spreading over the IDE, which was validated experimentally within a 5% error. Two melting concepts utilizing the spreading or the removal of the melted PCM over the IDE are investigated based on a capillary retention mechanism to maintain sensor sensitivity under inclination. Finally, an eco-friendly implementation of the capacitive structure and its wireless operation at 460 MHz is demonstrated on paper with a printed zinc transducer passivated with beeswax and covered with jojoba oil. Melting of the oil at a threshold temperature of 12.3 °C resulted in an irreversible shift in resonance frequency of 14 MHz. This study provides guidelines for the design and implementation of irreversible temperature monitoring capacitive sensors.
监测易腐货物在运输和储存过程中的温度对于防止浪费和保持产品质量至关重要。利用相变材料 (PCM) 在特定温度下会改变物理状态的独特特性,我们优化了一种电容式传感器的设计,该传感器基于涂有 PCM 的聚酰亚胺间螺旋 (IDE) 铜结构,能够不可逆地检测温度阈值。我们使用有限元模型模拟分析了传感器尺寸对其响应的影响。该模型预测,在 IDE 上铺设 PCM 后,最佳覆盖范围内的电容变化可达 51%,实验验证了这一预测,误差不超过 5%。在毛细管保持机制的基础上,研究了两种熔化概念,即在 IDE 上铺展或移除熔化的 PCM,以保持传感器在倾斜状态下的灵敏度。最后,在纸上展示了一种环保的电容式结构及其在 460 MHz 频率下的无线操作,该结构是用蜂蜡钝化并覆盖荷荷巴油的印刷锌传感器。在 12.3 °C 的临界温度下,油的熔化导致共振频率不可逆转地移动了 14 MHz。这项研究为不可逆温度监测电容式传感器的设计和实施提供了指导。
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引用次数: 0
Excellent microwave absorption performance of zinc-doped SrFe12O19 hexaferrite and detailed loss mechanism 掺锌 SrFe12O19 六价铁氧体的优异微波吸收性能及详细损耗机制
IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-10 DOI: 10.1016/j.jsamd.2024.100796
N.L. Tuyen , N.T. Hue , P.T. Tho , H.N. Toan , C.T.A. Xuan , N.V. Dang , T.A. Ho , N.Q. Tuan , N. Tran
In this work, the SrFe12–xZnxO19 (Zn-SrM, x = 0, 0.1, 0.4, and 1.0) samples were fabricated using a combination of ball milling and heat treatment methods, which was simple and low-cost. Interestingly, the Zn-SrM samples exhibited great microwave absorption performances with an absorption rate of more than 99.99% and very thin thicknesses. The x = 0.1 sample could reach an excellent RL value of −40.08 dB at f = 17.88 GHz for a thickness of 1.45 mm. The x = 0.4 sample achieved a great RL value of −42.51 dB at 17.86 GHz and an EAB value of 1.29 GHz for t = 1.50 mm. With a thickness of 5.1 mm, the x = 1.0 sample could achieve a great RL value of −51.20 dB and an EAB value of 1.58 GHz. This microwave absorption performance, low cost, and simplicity of fabrication could confirm that Zn-SrM samples could be used as high-efficiency MAMs. The great microwave dissipating characteristics could be attributed to the high values of imaginary parts of complex permeability and complex permittivity leading to the high loss tangent, high degree of impedance matching, high values of attenuation constant and conductivity, suitable values of eddy current factor, and large numbers of semicircles in their Cole-Cole plots.
在这项工作中,采用球磨和热处理相结合的方法制备了 SrFe12-xZnxO19 (Zn-SrM,x = 0、0.1、0.4 和 1.0)样品,这种方法简单且成本低廉。有趣的是,Zn-SrM 样品具有很好的微波吸收性能,吸收率超过 99.99%,厚度非常薄。厚度为 1.45 毫米的 x = 0.1 样品在 f = 17.88 GHz 频率下的 RL 值为 -40.08 dB。x = 0.4 样品在 17.86 GHz 时的 RL 值为 -42.51 dB,t = 1.50 mm 时的 EAB 值为 1.29 GHz。厚度为 5.1 毫米时,x = 1.0 样品的 RL 值为 -51.20 dB,EAB 值为 1.58 GHz。Zn-SrM样品的微波吸收性能、低成本和简单的制造工艺证实了它可以用作高效MAM。Zn-SrM样品的高微波耗散特性可归因于复磁导率和复介电常数的高虚部值导致的高损耗正切、高阻抗匹配度、高衰减常数和电导率值、合适的涡流因子值以及其科尔-科尔图中的大量半圆。
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Journal of Science: Advanced Materials and Devices
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