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Electrochemical microneedle DNA-aptasensor for in vitro theophylline detection supported by molecular docking analysis 基于分子对接分析的电化学微针dna -配体传感器体外检测茶碱
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-27 DOI: 10.1016/j.jsamd.2026.101107
Yeni Wahyuni Hartati , Serly Zuliska , Wulan Khaerani , Irkham , Jarnuzi Gunlazuardi , Qonita Kurnia Anjani , Takeshi Kondo , Prastika Krisma Jiwanti
An electrochemical aptasensor for theophylline detection was developed by integrating computational analysis, gold nanoparticle–modified screen-printed carbon electrodes (SPCE/AuNP), and hydrogel-forming microneedles. Molecular docking and molecular dynamics simulations confirmed the preferential and stable binding of the DNA aptamer to theophylline within a conserved stem–loop region, providing a molecular basis for selectivity. AuNP modification significantly enhanced electron-transfer kinetics and electroactive surface area, enabling sensitive signal transduction. The aptasensor exhibited a linear response over the range of 10–1000 μM with a detection limit of 0.39 μM and high reproducibility (RSD 1.59 %). Excellent selectivity was observed against common interferents. Integration with hydrogel microneedles enabled the detection of theophylline in spiked human blood, achieving a detection limit of 0.29 μM and satisfactory recovery. These results demonstrate the potential of the developed microneedle-assisted aptasensor as a minimally invasive platform for therapeutic drug monitoring of theophylline.
将计算分析、金纳米粒子修饰的丝网印刷碳电极(SPCE/AuNP)和水凝胶形成微针相结合,开发了一种检测茶碱的电化学感应传感器。分子对接和分子动力学模拟证实了DNA适体与茶碱在一个保守的茎环区域内的优先和稳定结合,为选择性提供了分子基础。AuNP修饰显著增强了电子传递动力学和电活性表面积,实现了敏感的信号转导。该传感器在10 ~ 1000 μM范围内具有良好的线性响应,检出限为0.39 μM,重现性高(RSD为1.59%)。对常见干扰具有良好的选择性。该方法与水凝胶微针相结合,可检测出加标后人血中的茶碱,检出限为0.29 μM,回收率良好。这些结果证明了开发的微针辅助适配体传感器作为治疗药物监测茶碱的微创平台的潜力。
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引用次数: 0
Quantum transport simulation of 2D B4Cl4 in 5.0 nm node flexible MOSFETs 二维B4Cl4在5.0 nm节点柔性mosfet中的量子输运模拟
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-22 DOI: 10.1016/j.jsamd.2026.101104
Zhanhai Li , Zhenhua Zhang , Shengde Liang , Xun Wang
Flexible electronic devices can retain stable electrical performance under complex deformations, thus offering a key technological pathway for cutting-edge nanoscale electronic systems. However, the precise design of two-dimensional (2D) material-based devices with high bending tolerance and low power (LP) consumption remains a core bottleneck that urgently demands resolution. In this work, we systematically investigate the crystal structure, dynamic stability, intrinsic electronic properties, and quantum transport behavior of monolayer B4Cl4 applied in a 5.0 nm process node flexible metal oxide semiconductor field-effect transistor (MOSFET) via the combination of density functional theory and non-equilibrium Green's function method. Results demonstrate that the n-type MOSFETs with transport along the x-direction (x,nMOSFETs) can simultaneously satisfy the core specifications of the international semiconductor technology roadmap (ITRS) for high-performance (HP) and LP devices by 2028. The non-conformally bent dual-gate (DG) x,nMOSFET exhibits excellent bending tolerance, with its maximum on-state current exceeding 98.94% (43.44%) of the ITRS HP (LP) standards. Moreover, its subthreshold swing approaches the 60 mV/dec thermodynamic limit across the entire bending range, and the power-delay product (PDP) of the LP device is merely half of the ITRS benchmark. For the conformally bent DG x,nMOSFET, it can further reduce gate capacitance, intrinsic delay time, and PDP under the same bending amplitude, thereby opening up a new direction for LP device integration. This work not only verifies the unique application advantages of monolayer B4Cl4 in 5 nm node flexible HP/LP nanoelectronic devices, but also lays a crucial theoretical foundation for the precise construction of 2D material-based LP flexible devices, and offers insights into the device design paradigm featuring collaborative optimization of multi-structure and multi-bending-mode configurations.
柔性电子器件可以在复杂变形条件下保持稳定的电性能,从而为尖端纳米级电子系统提供了关键的技术途径。然而,具有高弯曲公差和低功耗(LP)消耗的二维(2D)材料基器件的精确设计仍然是迫切需要解决的核心瓶颈。本文采用密度泛函理论和非平衡格林函数相结合的方法,系统地研究了应用于5.0 nm工艺节点柔性金属氧化物半导体场效应晶体管(MOSFET)的单层B4Cl4的晶体结构、动态稳定性、内在电子特性和量子输运行为。结果表明,具有沿x方向传输的n型mosfet (x, nmosfet)可以同时满足2028年高性能(HP)和LP器件的国际半导体技术路线图(ITRS)的核心规格。非共形弯曲双栅(DG) x,nMOSFET具有优异的弯曲容限,其最大导通电流超过ITRS HP (LP)标准的98.94%(43.44%)。此外,其亚阈值摆幅在整个弯曲范围内接近60 mV/dec热力学极限,LP器件的功率延迟积(PDP)仅为ITRS基准的一半。对于共形弯曲DG x,nMOSFET,在相同弯曲幅度下,它可以进一步降低栅极电容、固有延迟时间和PDP,从而为LP器件集成开辟了新的方向。本研究不仅验证了单层B4Cl4在5nm节点柔性HP/LP纳米电子器件中的独特应用优势,而且为精确构建基于二维材料的LP柔性器件奠定了重要的理论基础,并为多结构、多弯曲模式配置协同优化的器件设计模式提供了见解。
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引用次数: 0
Engineering novel nanocomposites containing multiphase metal borates and carbon for basic blue 41 sequestration from wastewater 含有多相金属硼酸盐和碳的工程新型纳米复合材料用于废水中碱性蓝41的固存
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-15 DOI: 10.1016/j.jsamd.2026.101103
Ehab A. Abdelrahman , Mohamed R. Elamin , Nada S. Al-Kadhi , Reem K. Shah , Sawsan Alashqar
Basic blue 41 is a persistent cationic dye whose intense color and high stability threaten aquatic ecosystems and degrade water quality even at low levels. Continued exposure can promote oxidative stress and possible genotoxic effects in living organisms, so its removal from wastewater is essential. In this study, the precursor produced by a facile Pechini sol–gel route was calcined at 500 and 700 °C to obtain Mg2B2O5/Sr2B2O5/MnO2/C (MBSM500) and Mg2B2O5/SrB2O4/Mn2(BO3)O/C (MBSM700) nanocomposites, respectively, for efficient adsorption of basic blue 41 from wastewater. XRD verified the production of well-crystallized multiphase structures with average crystal sizes of 49 nm concerning MBSM500 as well as 63 nm concerning MBSM700. EDX revealed B, C, O, Mg, Mn, and Sr in both materials, with MBSM500 containing more residual carbon, while MBSM700 exhibited relatively higher Mg, Mn, and Sr contents. FE-SEM and HR-TEM images showed highly agglomerated plate- and flake-like particles for MBSM500 and denser aggregates of larger quasi-spherical nanograins for MBSM700. Under the optimal operating conditions (initial dye concentration = 250 mg/L, pH = 10, and T = 298 K), MBSM500 removed 98.58 % of basic blue 41 within 60 min, whereas MBSM700 achieved 73.03 % removal in 80 min. Adsorption studies yielded maximum Langmuir capacities of 373.13 mg/g concerning MBSM500 as well as 290.69 mg/g concerning MBSM700. Thermodynamic and kinetic analyses demonstrated that basic blue 41 uptake is physically exothermic and spontaneous and follows the pseudo-first-order rate model and Langmuir monolayer isotherm behavior. Both nanocomposites could be effectively regenerated by acid elution and reused over several cycles while maintaining high performance in real laboratory wastewater, which highlights their promise as practical adsorbents for treating basic blue 41 contaminated effluents.
碱性蓝41是一种持久性阳离子染料,其强烈的颜色和高稳定性威胁着水生生态系统,即使在低水平下也会降低水质。持续接触可促进生物体的氧化应激和可能的遗传毒性作用,因此从废水中去除它是必不可少的。在500℃和700℃的高温下煅烧制备了Mg2B2O5/Sr2B2O5/MnO2/C (MBSM500)和Mg2B2O5/SrB2O4/Mn2(BO3)O/C (MBSM700)纳米复合材料,用于废水中碱性蓝41的高效吸附。XRD验证了制备出结晶良好的多相结构,MBSM500平均晶粒尺寸为49 nm, MBSM700平均晶粒尺寸为63 nm。EDX显示两种材料中均含有B、C、O、Mg、Mn和Sr,其中MBSM500的残余碳含量较多,而MBSM700的残余碳含量相对较高。FE-SEM和hrtem图像显示MBSM500具有高度团聚的片状和片状颗粒,而MBSM700具有更密集的更大的准球形纳米颗粒聚集。在最佳操作条件(初始染料浓度为250 mg/L, pH = 10, T = 298 K)下,MBSM500在60 min内对碱性蓝41的去除率为98.58%,而MBSM700在80 min内去除率为73.03%。吸附实验结果表明,MBSM500和MBSM700的最大Langmuir容量分别为373.13 mg/g和290.69 mg/g。热力学和动力学分析表明,碱性蓝41的吸收是物理放热和自发的,遵循伪一级速率模型和Langmuir单层等温行为。这两种纳米复合材料都可以通过酸洗脱有效地再生,并在几个循环中重复使用,同时在真实的实验室废水中保持高性能,这凸显了它们作为处理碱性蓝41污染废水的实用吸附剂的前景。
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引用次数: 0
Graphene oxide nanoparticle-infused metamaterial sensor for low permittivity characterization 用于低介电常数表征的氧化石墨烯纳米粒子注入超材料传感器
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-14 DOI: 10.1016/j.jsamd.2026.101101
Md.Bakey Billa , Mohammad Tariqul Islam , Touhidul Alam , Mandeep Singh , Mohamed Ouda , Abdulmajeed M. Alenezi , Mohamad A. Alawad
Accurate characterization of low-permittivity materials is essential for advancing high-frequency electronics, novel substrates, and microwave sensing systems. However, conventional methods often suffer from bulkiness, limited sensitivity, or complex measurement processes. To overcome these limitations, an innovative graphene oxide nanoparticle-infused metamaterial sensor specifically engineered for low-permittivity detection. The sensor comprises a hybrid circular and square split-ring resonator (SRRs) fabricated using 0.035 mm conductive copper tape on a graphene oxide substrate, enabling tunable resistive properties and enhanced electromagnetic confinement. The sensor is experimentally measured in an X-band waveguide system with TRL calibration from 8 to 10 GHz. The sensor exhibits a strong agreement between simulated and measured S21 responses, with a resonance shift from 8.592 GHz (ε = 1) to 8.36 GHz (ε = 3.66), and a relative error consistently below 1 %. Effective medium analysis reveals that the metamaterial exhibits negative permittivity (ε < 0) and permeability (μ< 0) at resonance, confirming its left-handed metamaterial behavior. The surface current, electric field, and magnetic field distributions show strong localization at the resonator gaps, contributing to enhanced sensing performance. A linear regression model between dielectric constant and resonance frequency shift (Δf) is developed with a coefficient of determination R2 = 0.908, and the derived model exhibits a maximum absolute error under 2 %. The measured sensitivity reached up to 140.3 MHz/Δε for ε = 1.57, demonstrating superior performance in low-ε characterization compared to traditional sensors. The combination of metamaterial-inspired resonance behavior, tunable graphene conductivity, and analytical modeling enables this sensor to serve as an efficient, low-cost, and highly sensitive platform for dielectric characterization.
准确表征低介电常数材料是必不可少的推进高频电子,新型衬底和微波传感系统。然而,传统的方法往往存在体积大、灵敏度有限或测量过程复杂的问题。为了克服这些限制,一种创新的氧化石墨烯纳米粒子注入超材料传感器专门设计用于低介电常数检测。该传感器包括一个圆形和方形混合分环谐振器(srr),在氧化石墨烯衬底上使用0.035 mm导电铜带制造,具有可调的电阻特性和增强的电磁约束。该传感器在x波段波导系统中进行了实验测量,TRL校准范围为8至10 GHz。该传感器的模拟S21响应与实测S21响应具有很强的一致性,谐振范围从8.592 GHz (ε = 1)到8.36 GHz (ε = 3.66),相对误差始终低于1%。有效介质分析表明,该超材料在共振时表现为负介电常数(ε < 0)和磁导率(μ< 0),证实了其左旋超材料特性。表面电流、电场和磁场分布在谐振腔间隙处表现出很强的局域化,有助于增强传感性能。建立了介电常数与共振频移(Δf)的线性回归模型,决定系数R2 = 0.908,模型的最大绝对误差小于2%。当ε = 1.57时,测量灵敏度高达140.3 MHz/Δε,与传统传感器相比,在低ε表征方面表现出优越的性能。超材料激发的共振行为、可调石墨烯电导率和分析建模的结合,使该传感器成为一种高效、低成本、高灵敏度的电介质表征平台。
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引用次数: 0
Engineered PVC ultrafiltration membranes with amine-functionalized MOFs for water treatment: A comparative study on dye removal and antibacterial performance 氨基功能化mof工程聚氯乙烯超滤膜水处理:染料去除和抗菌性能的比较研究
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-14 DOI: 10.1016/j.jsamd.2026.101102
Amir Hossein Hamzeh , Shefa Mirani Nezhad , Ehsan Nazarzadeh Zare , Jafar Mahmoudi , Hassan Karimi-Maleh
This study developed poly(vinyl chloride)(PVC)-based ultrafiltration membranes enhanced with amino-functionalized MIL-101–NH2 (Al/Cr) metal–organic frameworks (MOFs) using the phase inversion method. The membranes were characterized by FTIR, SEM, AFM, and contact angle measurements. The incorporation of MOFs significantly improved membrane hydrophilicity, porosity (up to ∼85 %), and water uptake (nearly 80 %), with the M2 (Cr) and M2 (Al) composites showing the optimal performance balance. Incorporation of MIL-101–NH2 noticeably improved membrane performance by increasing porosity to around 85 % and water uptake to nearly 80 %. Among the fabricated membranes, M2 (Cr) and M2 (Al) showed the most favorable balance between pore structure and hydrophilicity. As a result, these optimized membranes demonstrated a marked enhancement in pure water flux, reaching about 534.7 L m−2 h−1 for M2 (Cr) and 526.2 L m−2 h−1 for M2 (Al), compared with only 276.7 L m−2 h−1 for the pristine PVC membrane. Performance tests indicated that introducing hydrophilic –NH2 groups and interconnected pores significantly improved pure water flux compared to pristine PVC. The optimized membranes exhibited effective removal of humic acid (≈70–80 %), methyl orange (≈29 %), and methylene blue (≈47 %) due to the combined effects of size exclusion and electrostatic interactions. They also demonstrated enhanced antifouling behavior, with flux recovery ratios (FRR) of approximately 51–52 % for the best-performing membranes, indicating improved cleaning efficiency relative to pristine PVC. Antibacterial evaluation using the Kirby–Bauer disk diffusion method revealed that MIL-101–NH2(Al) membranes displayed broader antibacterial activity against E. coli, S. aureus, and S. enteritidis, whereas MIL-101–NH2(Cr) showed selective activity mainly against E. coli and B. subtilis.
本研究采用相转化方法制备了氨基功能化MIL-101-NH2 (Al/Cr)金属有机骨架(mof)增强聚氯乙烯(PVC)基超滤膜。通过红外光谱(FTIR)、扫描电镜(SEM)、原子力显微镜(AFM)和接触角测量对膜进行了表征。mof的掺入显著提高了膜的亲水性、孔隙率(高达~ 85%)和吸水性(近80%),其中M2 (Cr)和M2 (Al)复合材料表现出最佳的性能平衡。MIL-101-NH2的掺入显著改善了膜的性能,将孔隙率提高到85%左右,吸水性提高到近80%。在制备的膜中,M2 (Cr)和M2 (Al)在孔隙结构和亲水性之间表现出最有利的平衡。结果表明,优化膜的纯水通量显著提高,M2 (Cr)和M2 (Al)分别达到534.7 L m−2 h−1和526.2 L m−2 h−1,而原始PVC膜的纯水通量仅为276.7 L m−2 h−1。性能测试表明,与原始PVC相比,引入亲水性-NH2基团和相互连接的孔显着提高了纯水通量。由于尺寸排斥和静电相互作用的共同作用,优化后的膜对腐植酸(≈70 - 80%)、甲基橙(≈29%)和亚甲基蓝(≈47%)的去除率达到了较高的水平。它们还显示出增强的防污性能,最佳膜的通量回收率(FRR)约为51 - 52%,表明相对于原始PVC,清洁效率有所提高。采用Kirby-Bauer圆盘扩散法对MIL-101-NH2 (Al)膜进行抑菌评价,结果表明MIL-101-NH2 (Cr)膜对大肠杆菌、金黄色葡萄球菌和肠炎链球菌具有较强的抗菌活性,而MIL-101-NH2 (Cr)膜主要对大肠杆菌和枯草芽孢杆菌具有选择性抗菌活性。
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引用次数: 0
Charge transfer and PMS activation in high-entropy spinel oxide-based Z-scheme heterojunctions for ciprofloxacin degradation 高熵尖晶石氧化基z型异质结中环丙沙星降解的电荷转移和PMS激活
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-13 DOI: 10.1016/j.jsamd.2026.101100
Xinmiao Yu , Shifa Wang , Peilin Mo , Huajing Gao , Changhua Wang
The low charge transfer and separation efficiency of high-entropy oxides remain the urgent problems that need to be solved to limit their application in the field of photocatalysis. A low-temperature sintering technology combined with polyacrylamide gel method was used to synthesis a series of Z-scheme heterojunctions (Ni0.2Zn0.2Mg0.2Cu0.2Co0.2)[Al0.9(Cr0.025Fe0.025Mn0.025Co0.025)]2O4/photinia leaves (A/Ps) with the diverse mass percentages of A/Ps, namely 9:1 (S1), 8:2 (S2), and 7:3 (S3) to enhance the photocatalytic activity of high-entropy oxides. The C element in Ps, the continuous reaction of various multivalent metals, and the electron transfer pathway are conducive to the available active Peroxomonosulfate (PMS). The degradation percentage of Ciprofloxacin (CIP) by S3/PMS/vis reaches 82.6 % within 20 min, surpassing the Ps/vis, A/vis and S3/vis for 5.39, 2.07 and 2.96 times, respectively. The S3/PMS/vis exhibits high charge transfer and separation efficiency, excellent cyclic and structural stability, which is suitable for diverse environmental conditions, and demonstrates a remarkable degradation percentage. Density functional theory (DFT) is employed to investigate the variation of adsorption energy in different catalysis systems. The degradation pathway and ecotoxicity of CIP are assessed to confirm the effective degradation of CIP by S3/PMS/vis and emphasize that the charge transfer and photo-activation PMS are effective strategies for removing pollutants from natural water bodies.
高熵氧化物的低电荷转移和低分离效率是限制其在光催化领域应用的迫切需要解决的问题。采用低温烧结技术结合聚丙烯酰胺凝胶法制备了一系列A/Ps质量分数分别为9:1 (S1)、8:2 (S2)和7:3 (S3)的Z-scheme异质结(Ni0.2Zn0.2Mg0.2Cu0.2Co0.2)[Al0.9(Cr0.025Fe0.025Mn0.025Co0.025)]2O4/石红叶(A/Ps),以提高高熵氧化物的光催化活性。Ps中的C元素、多种多价金属的连续反应以及电子转移途径有利于有效的过氧单硫酸盐(PMS)。S3/PMS/vis在20 min内对环丙沙星(CIP)的降解率达到82.6%,分别是Ps/vis、A/vis和S3/vis的5.39倍、2.07倍和2.96倍。S3/PMS/vis具有较高的电荷转移和分离效率,良好的循环稳定性和结构稳定性,适用于各种环境条件,并具有显著的降解率。采用密度泛函理论研究了不同催化体系中吸附能的变化。通过对CIP的降解途径和生态毒性的评价,证实了S3/PMS/vis对CIP的有效降解,并强调了电荷转移和光活化PMS是去除天然水体中污染物的有效策略。
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引用次数: 0
Preparation of silicone- bismaleimide photosensitive resin and its application in 3D printing 硅双马来酰亚胺光敏树脂的制备及其在3D打印中的应用
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-13 DOI: 10.1016/j.jsamd.2026.101099
Huan Xie , Shaoyun Chen , Bo Qu , Xiaoying Liu , Wenjie Li , Rui Wang , Linxi Hou , Dongxian Zhuo
In recent years, light-curing 3D printing technology has been extensively adopted across various fields due to its advantages, including high precision and efficiency. As the key material in this technology, the properties of photosensitive resin directly influence the mechanical strength, thermal stability, and functional characteristics of the printed parts. Bismaleimide (BMI) resin exhibits excellent heat resistance, dielectric properties, and mechanical strength. However, its inherent brittleness and poor processability have limited its application in 3D printing. To address these challenges, this study synthesized a BAG oligomer containing flexible siloxane segments and photosensitive groups via a Michael addition reaction. This oligomer was incorporated into a photosensitive resin system to develop a novel BMI resin tailored for light-curing 3D printing. The effects of varying BAG content on the resin's rheological behavior, 3D printing compatibility, mechanical performance, thermal stability, dynamic thermomechanical properties, water absorption, and dielectric characteristics were systematically investigated. The results demonstrated that at a BAG oligomer content of 10 wt%, the resin achieved optimal overall performance, with tensile strength and flexural strength reaching 56.9 MPa and 148.8 MPa, respectively. Additionally, impact strength increased continuously with higher BAG content, peaking at 11.5 kJ/m2. The maximum decomposition temperature (Tmax) rose to 421.4 °C, accompanied by a notable increase in char residue. Dynamic mechanical analysis indicated an increase in storage modulus to 1704.5 MPa and cross-linking density, although the glass transition temperature (Tg) experienced a slight decline. While the addition of BAG marginally elevated the dielectric constant (Dk), it significantly reduced dielectric loss (Df) to 0.010, underscoring favorable dielectric properties. In summary, this work develops and validates a BMI-based photosensitive resin that simultaneously meets the critical requirements for printability, mechanical performance, thermal stability, and dielectric properties, presenting a formulation with practical potential for broadening the use of BMI in light-curing 3D printing.
近年来,光固化3D打印技术以其精度高、效率高等优点,在各个领域得到了广泛的应用。光敏树脂作为该技术的关键材料,其性能直接影响到打印件的机械强度、热稳定性和功能特性。双马来酰亚胺(BMI)树脂具有优异的耐热性、介电性能和机械强度。然而,其固有的脆性和较差的加工性限制了其在3D打印中的应用。为了解决这些问题,本研究通过Michael加成反应合成了一种含有柔性硅氧烷段和光敏基团的BAG低聚物。该低聚物被整合到光敏树脂系统中,开发出一种适合光固化3D打印的新型BMI树脂。系统研究了不同BAG含量对树脂流变行为、3D打印相容性、机械性能、热稳定性、动态热机械性能、吸水率和介电特性的影响。结果表明,当BAG低聚物含量为10 wt%时,树脂的综合性能最佳,拉伸强度和弯曲强度分别达到56.9 MPa和148.8 MPa。随着BAG含量的增加,冲击强度不断提高,达到峰值11.5 kJ/m2。最高分解温度(Tmax)上升至421.4℃,炭渣显著增加。动态力学分析表明,尽管玻璃化转变温度(Tg)略有下降,但存储模量增加至1704.5 MPa,交联密度增加。虽然袋子的加入略微提高了介电常数(Dk),但它显著降低了介电损耗(Df)至0.010,强调了良好的介电性能。总之,这项工作开发并验证了一种基于BMI的光敏树脂,该树脂同时满足印刷性、机械性能、热稳定性和介电性能的关键要求,提出了一种具有扩大BMI在光固化3D打印中的应用的实际潜力的配方。
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引用次数: 0
Analytical models for mean free path and resistivity of borophene for on-chip interconnects 片上互连中硼罗芬平均自由程和电阻率的分析模型
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-09 DOI: 10.1016/j.jsamd.2025.101092
Vinod Agarawal, Somesh Kumar
Scaling copper interconnects below the 7-nm technology node results in severe resistivity increase due to enhanced electron scattering, necessitating alternative interconnect materials. This work proposes borophene nanoribbons (BNRs) and presents a novel analytical models to evaluate their intrinsic mean free path (MFP), resistance, and effective resistivity under ideal smooth-surface conditions. The model captures quantum transport effects and Fermi-energy-dependent conduction channels for armchair and zigzag BNRs and is benchmarked against graphene and copper. At the 7-nm node and a Fermi energy of 0.3 eV, borophene exhibits an intrinsic MFP comparable to graphene and nearly three orders of magnitude higher than copper. Additionally, borophene achieves up to an 85.5% reduction in effective resistivity compared to copper, while maintaining competitive performance relative to graphene. These findings demonstrate that Fermi-energy tuning significantly enhances borophene’s transport performance, highlighting its strong potential as a scalable and energy-efficient on-chip interconnect material for advanced CMOS technologies.
在7nm技术节点以下缩放铜互连,由于电子散射增强,导致电阻率急剧增加,需要替代互连材料。本研究提出了硼罗芬纳米带(bnr),并提出了一种新的分析模型来评估其在理想光滑表面条件下的固有平均自由程(MFP)、电阻和有效电阻率。该模型捕获了扶手椅和之字形bnr的量子输运效应和费米能量相关传导通道,并以石墨烯和铜为基准。在7纳米节点和0.3 eV的费米能量下,硼罗芬表现出与石墨烯相当的本征MFP,比铜高出近3个数量级。此外,与铜相比,硼罗芬的有效电阻率降低了85.5%,同时保持了相对于石墨烯的竞争力。这些发现表明,费米能量调谐显着提高了硼罗芬的传输性能,突出了其作为先进CMOS技术的可扩展和节能片上互连材料的强大潜力。
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引用次数: 0
Trapping-tunable dual-mode optoelectronic device for optoelectronic synapse and photodetector 用于光电突触和光电探测器的捕获可调谐双模光电器件
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-05 DOI: 10.1016/j.jsamd.2026.101098
Chengdong Yang, Yue Wu, Linlin Su, Lihua Xu, Hongxu Li
We propose a thickness-modulated strategy for implementing two operations (optoelectronic synapse and photodetector) simultaneously in the same device structure. For the MoS2 thickness of <56 nm, the device works as an optoelectronic synapse with some neuromorphic functionalities such as spike-interval-dependent plasticity, spike-rate-dependent plasticity, and short-to-long-term plasticity. By combining synaptic plasticity with an artificial neural network, it achieves precise image recognition and classification with an accuracy of >95 %. As the thickness increases, excitons and trapping sites are separated by an increasing gap that facilitates a mode transition from synapse to detector. For 368-nm thickness, devices exhibit a photodetector mode with the response speed at the millisecond level and responsivity of 163 mA/W.
我们提出了一种厚度调制策略,在同一器件结构中同时实现两种操作(光电突触和光电探测器)。对于厚度为56 nm的MoS2,该器件作为光电突触工作,具有一些神经形态功能,如峰间隔依赖性可塑性、峰速率依赖性可塑性和短期-长期可塑性。通过将突触可塑性与人工神经网络相结合,实现了精确的图像识别和分类,准确率达到95%。随着厚度的增加,激子和捕获位点被越来越大的间隙分开,这有助于从突触到检测器的模式转换。对于368 nm厚度,器件表现出响应速度为毫秒级的光电探测器模式,响应率为163 mA/W。
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引用次数: 0
Solution-crystallized and conductivity-tailored ultrathin-body indium oxide for high-bias-stress-robust enhancement-mode transistors 溶液结晶和电导率定制超薄体氧化铟用于高偏置应力鲁棒增强模式晶体管
IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-02 DOI: 10.1016/j.jsamd.2026.101097
Se Jin Park , Jinhong Park , Dohyeon Gil , Jae Wook Ahn , Minsu Choi , Jaewon Jang , In Man Kang , Jangwoo Kim , Hyun Sung Park , Young-Gu Kang , HyeonDo Park , Do-Kyung Kim , Jin-Hyuk Bae
Oxide semiconductors have emerged as promising candidates for next-generation electronic devices due to their inherent advantages. However, achieving high stability under strong gate bias stress remains a critical challenge, especially for applications in advanced electronic systems. In this study, we propose a conductivity-tailored thermal crystallization strategy to significantly reduce the high-bias-stress-induced instability of indium oxide (InOX) thin-film transistors (TFTs). The introduction of yttrium oxide (YOX) capping layer effectively suppresses the unintended excessive free electrons induced during thermal annealing, thereby preventing the degradation of threshold voltage (VT) and on/off current ratio. As a result, the proposed crystallization approach simultaneously enables excellent initial electrical performance and enhanced bias stability. Notably, the dependence of VT shift (ΔVT) on electric field stress (ESTR), i.e., the slope of the ΔVT with respect to the ESTR, was highly decreased for high-crystalline InOX/YOX TFTs compared to the control group. The mathematical relationship between ΔVT and ESTR, along with the interpretation of the stretched exponential model parameters reflecting the physical mechanisms of device degradation, suggests that thermal crystallization suppresses the electron trapping in acceptor-like trap states in the bulk InOX. Therefore, these mechanisms contribute to the dramatic enhancement in high-electric field stability. These findings underscore the importance of microstructural engineering in oxide semiconductors for emerging applications requiring robust gate-field endurance and long-term device stability, including monolithic 3D integration, memory, and advanced display technologies.
氧化物半导体由于其固有的优点而成为下一代电子器件的有希望的候选者。然而,在强栅极偏置应力下实现高稳定性仍然是一个关键的挑战,特别是在先进电子系统中的应用。在这项研究中,我们提出了一种适合电导率的热结晶策略,以显着降低氧化铟(InOX)薄膜晶体管(TFTs)的高偏置应力诱导的不稳定性。氧化钇(YOX)封盖层的引入有效抑制了热退火过程中意外产生的过多自由电子,从而防止了阈值电压(VT)和开关电流比的下降。因此,提出的结晶方法同时实现了优异的初始电性能和增强的偏置稳定性。值得注意的是,与对照组相比,高结晶InOX/YOX TFTs的VT位移(ΔVT)对电场应力(ESTR)的依赖性,即ΔVT相对于ESTR的斜率,大大降低。ΔVT和ESTR之间的数学关系,以及对反映器件退化物理机制的拉伸指数模型参数的解释表明,热结晶抑制了体InOX中受体样陷阱态的电子捕获。因此,这些机制有助于显著提高高电场稳定性。这些发现强调了氧化物半导体微结构工程对新兴应用的重要性,这些应用需要强大的门场耐久性和长期器件稳定性,包括单片3D集成、存储器和先进的显示技术。
{"title":"Solution-crystallized and conductivity-tailored ultrathin-body indium oxide for high-bias-stress-robust enhancement-mode transistors","authors":"Se Jin Park ,&nbsp;Jinhong Park ,&nbsp;Dohyeon Gil ,&nbsp;Jae Wook Ahn ,&nbsp;Minsu Choi ,&nbsp;Jaewon Jang ,&nbsp;In Man Kang ,&nbsp;Jangwoo Kim ,&nbsp;Hyun Sung Park ,&nbsp;Young-Gu Kang ,&nbsp;HyeonDo Park ,&nbsp;Do-Kyung Kim ,&nbsp;Jin-Hyuk Bae","doi":"10.1016/j.jsamd.2026.101097","DOIUrl":"10.1016/j.jsamd.2026.101097","url":null,"abstract":"<div><div>Oxide semiconductors have emerged as promising candidates for next-generation electronic devices due to their inherent advantages. However, achieving high stability under strong gate bias stress remains a critical challenge, especially for applications in advanced electronic systems. In this study, we propose a conductivity-tailored thermal crystallization strategy to significantly reduce the high-bias-stress-induced instability of indium oxide (InO<sub>X</sub>) thin-film transistors (TFTs). The introduction of yttrium oxide (YO<sub>X</sub>) capping layer effectively suppresses the unintended excessive free electrons induced during thermal annealing, thereby preventing the degradation of threshold voltage (V<sub>T</sub>) and on/off current ratio. As a result, the proposed crystallization approach simultaneously enables excellent initial electrical performance and enhanced bias stability. Notably, the dependence of V<sub>T</sub> shift (ΔV<sub>T</sub>) on electric field stress (E<sub>STR</sub>), i.e., the slope of the ΔV<sub>T</sub> with respect to the E<sub>STR</sub>, was highly decreased for high-crystalline InO<sub>X</sub>/YO<sub>X</sub> TFTs compared to the control group. The mathematical relationship between ΔV<sub>T</sub> and E<sub>STR</sub>, along with the interpretation of the stretched exponential model parameters reflecting the physical mechanisms of device degradation, suggests that thermal crystallization suppresses the electron trapping in acceptor-like trap states in the bulk InO<sub>X</sub>. Therefore, these mechanisms contribute to the dramatic enhancement in high-electric field stability. These findings underscore the importance of microstructural engineering in oxide semiconductors for emerging applications requiring robust gate-field endurance and long-term device stability, including monolithic 3D integration, memory, and advanced display technologies.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101097"},"PeriodicalIF":6.8,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145977497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Journal of Science: Advanced Materials and Devices
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