Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2024-03-06 DOI:10.1007/s13391-024-00484-1

Hyung-Jin Lee, Soo-Young Moon, Kung-Yen Lee, Sang-Mo Koo

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Abstract

This study investigated the impact of the post-deposition annealing (PDA) process on the material and electrical properties of copper oxide (Cu₂O) and nickel oxide (NiO) thin films deposited on a silicon carbide (SiC) substrate. Through radiofrequency (RF) sputtering, these films were subjected to PDA in a nitrogen (N₂) and oxygen (O₂) gas environment. Remarkably, the Cu₂O films resisted phase transition following the N₂ PDA process but exhibited a transition to cupric oxide (CuO) after undergoing the O₂ PDA process. The symmetry of Cu 2p in the as-deposited Cu₂O film was excellent; however, the phase-transformed CuO films exhibited an increase in binding energy and the emergence of satellite peaks. The Ni 2p exhibited various defects, such as nickel vacancies (V_Ni) and interstitial oxygen (O_i), in response to the different PDA atmospheres. The rectification ratios of the N₂-annealed Cu₂O and NiO devices were determined as 1.50 × 10⁷ and 4.01 × 10⁶, respectively, signifying a substantial enhancement by a factor of approximately 789 for the Cu₂O/SiC device and 124 for the NiO/SiC device relative to their non-annealed counterparts. The findings of this study indicate that meticulous control of deposition for potential p-type materials such as Cu₂O and NiO can significantly improve the performance in applications involving high-throughput and low-cost electronics.

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沉积后退火对射频溅射 Cu2O/4H-SiC 和 NiO/4H-SiC PiN 二极管电特性的影响

本研究探讨了沉积后退火（PDA）工艺对沉积在碳化硅（SiC）基底上的氧化铜（Cu2O）和氧化镍（NiO）薄膜的材料和电气性能的影响。通过射频（RF）溅射，这些薄膜在氮气（N2）和氧气（O2）环境中进行了 PDA 处理。值得注意的是，在氮气 PDA 过程中，Cu2O 薄膜抵制了相变，但在氧气 PDA 过程中，Cu2O 薄膜表现出向氧化铜（CuO）的转变。在沉积的 Cu2O 薄膜中，Cu 2p 的对称性非常好；然而，相变的 CuO 薄膜显示出结合能的增加和卫星峰的出现。在不同的 PDA 气氛下，镍 2p 表现出各种缺陷，如镍空位（VNi）和间隙氧（Oi）。经 N2-退火处理的 Cu2O 和 NiO 器件的整流比分别为 1.50 × 107 和 4.01 × 106，与未退火处理的器件相比，Cu2O/SiC 器件的整流比提高了约 789 倍，NiO/SiC 器件的整流比提高了约 124 倍。这项研究的结果表明，对 Cu2O 和 NiO 等潜在 p 型材料的沉积进行精细控制，可以显著提高涉及高通量和低成本电子器件应用的性能。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.