Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2023-12-15 DOI:10.1109/TDMR.2023.3343503

Christoph Weimer;Gerhard G. Fischer;Michael Schröter

引用次数: 0

Abstract

This paper aims at determining RF operating limits of SiGe HBTs. Long-term stress tests consisting of RF large-signal stress and periodic measurements of small-signal parameters are performed. Reliable dynamic large-signal transistor operation is demonstrated beyond conventional static safe operating limits. In addition, RF operating limits are identified and degradation of SiGe HBTs accelerated by extreme RF stress is systematically characterized, analyzed and modeled. RF-stress-caused degradation is shown to significantly affect the collector current and demonstrated to be different from electrothermal breakdown caused by DC stress. A modeling approach for estimating SiGe HBT degradation under RF large-signal operating conditions is proposed and shown to agree very well with experimental data.

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高功率密度应用中 SiGe HBT 长期射频可靠性和劣化的表征、分析与建模

本文旨在确定 SiGe HBT 的射频工作极限。本文进行了长期应力测试，包括射频大信号应力和小信号参数的定期测量。结果表明，动态大信号晶体管的可靠工作超出了传统的静态安全工作极限。此外，还确定了射频工作极限，并对极端射频应力加速的 SiGe HBT 退化进行了系统表征、分析和建模。射频应力引起的劣化会显著影响集电极电流，并证明它不同于直流应力引起的电热击穿。提出了一种用于估计射频大信号工作条件下 SiGe HBT 退化情况的建模方法，结果表明该方法与实验数据非常吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.