Optimization of The Thickness of Single-Layer Antireflection SiO $${}_{\mathbf{2}}$$ Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light
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Abstract
Theoretical investigations of the dependence of the optimal thickness of a one-layer antireflection SiO\({}_{2}\) coating on a silicon photodiode on the characteristics of the light incident to the photodiode. It is shown that the optimal thickness of the one-layer antireflection SiO\({}_{2}\) coating for different angular distributions of intensity increases the quantum efficiency of the photodiode by up to 1.1 times in comparison with the classical one-layer antireflection coating with a thickness \(\lambda/4n\), which is optimal in the case of the normal incidence of monochromatic light.
期刊介绍：
The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.
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