Yun Hyeok Song, Ji Min Lim, Sagar S. Khot, Dongmyung Jung, Yongwoo Kwon
{"title":"Simulation Study of Interfacial Switching Memristor Structure and Neural Network Performance","authors":"Yun Hyeok Song, Ji Min Lim, Sagar S. Khot, Dongmyung Jung, Yongwoo Kwon","doi":"10.3365/kjmm.2024.62.3.212","DOIUrl":null,"url":null,"abstract":"In this study, the architecture of an interfacial switching memristor, which has a metal-insulatormetal structure of Pt/SrTiO3/Nb-SrTiO3 was investigated. The performance of a neural network that uses memristors as its synapse components was also examined with system-level simulations. A finite element solver, COMSOL Multiphysics, was used to simulate synaptic device characteristics, specifically, the conductance change, using a series of pulses for a given architecture. An open-source software, NeuroSim, was used to simulate the ability of the neural network to recognize and identify handwritten digits. Electrostatics, mass transport, and thermionic emission equations were numerically solved in a fully coupled manner to model the Schottky barrier height modulation at the Pt/SrTiO3 contact using the applied bias. The barrier height is a function of the oxygen vacancy concentration in the SrTiO3 near the contact. The gradual change of the oxygen vacancy concentration profile caused by successive pulses results in the gradual change of conductance. Utilizing the simulations, the influences of device structure modification, and more specifically, changing the size of the Schottky contact, on long-term potentiation and depression were analyzed for planar devices. The results show that a smaller Schottky contact yields a higher digit recognition rate. Based on this finding, a three-dimensional device architecture that is vertically stackable was designed.","PeriodicalId":17894,"journal":{"name":"Korean Journal of Metals and Materials","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Korean Journal of Metals and Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3365/kjmm.2024.62.3.212","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the architecture of an interfacial switching memristor, which has a metal-insulatormetal structure of Pt/SrTiO3/Nb-SrTiO3 was investigated. The performance of a neural network that uses memristors as its synapse components was also examined with system-level simulations. A finite element solver, COMSOL Multiphysics, was used to simulate synaptic device characteristics, specifically, the conductance change, using a series of pulses for a given architecture. An open-source software, NeuroSim, was used to simulate the ability of the neural network to recognize and identify handwritten digits. Electrostatics, mass transport, and thermionic emission equations were numerically solved in a fully coupled manner to model the Schottky barrier height modulation at the Pt/SrTiO3 contact using the applied bias. The barrier height is a function of the oxygen vacancy concentration in the SrTiO3 near the contact. The gradual change of the oxygen vacancy concentration profile caused by successive pulses results in the gradual change of conductance. Utilizing the simulations, the influences of device structure modification, and more specifically, changing the size of the Schottky contact, on long-term potentiation and depression were analyzed for planar devices. The results show that a smaller Schottky contact yields a higher digit recognition rate. Based on this finding, a three-dimensional device architecture that is vertically stackable was designed.
期刊介绍:
The Korean Journal of Metals and Materials is a representative Korean-language journal of the Korean Institute of Metals and Materials (KIM); it publishes domestic and foreign academic papers related to metals and materials, in abroad range of fields from metals and materials to nano-materials, biomaterials, functional materials, energy materials, and new materials, and its official ISO designation is Korean J. Met. Mater.