{"title":"Comparative Study for the Electrodeposited Cadmium Chalcogenide by Potentiostatic and Potentiodynamic Methods for Electrochemical Reduction of CO2","authors":"Amira Gelany, H. Mohran, Mahmoud Elrouby","doi":"10.21608/sjsci.2024.236449.1123","DOIUrl":null,"url":null,"abstract":": Electrochemically synthesized cadmium sulfide (CdS) on cupper-modified substrate from an acidic solution containing Cd 2+ and S 2 O 32-ions at 20 o C has been produced with potentiostatic and potentiodynamic methods utilizing a three-electrode system. The prepared films have been characterized utilizing X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction analyses demonstrate that, under our optimized conditions, the CdS thin films deposited using both methods exhibit a pure and hexagonal structure. The electrodeposited CdS was found to behave as a p-type semiconductor, which was examined and demonstrated via the Mott-Schottky measurement. Depending upon the obtained data in this work, it was discovered that the electrodeposition techniques affect the morphology of the electrodeposited material (confirmed by SEM), carrier concentrations, thickness δ SC of the space-charge layer, the energy gap (E g ), as well as the sensitivity towards CO 2 electro-reduction.","PeriodicalId":146413,"journal":{"name":"Sohag Journal of Sciences","volume":"118 13","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sohag Journal of Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21608/sjsci.2024.236449.1123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
: Electrochemically synthesized cadmium sulfide (CdS) on cupper-modified substrate from an acidic solution containing Cd 2+ and S 2 O 32-ions at 20 o C has been produced with potentiostatic and potentiodynamic methods utilizing a three-electrode system. The prepared films have been characterized utilizing X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction analyses demonstrate that, under our optimized conditions, the CdS thin films deposited using both methods exhibit a pure and hexagonal structure. The electrodeposited CdS was found to behave as a p-type semiconductor, which was examined and demonstrated via the Mott-Schottky measurement. Depending upon the obtained data in this work, it was discovered that the electrodeposition techniques affect the morphology of the electrodeposited material (confirmed by SEM), carrier concentrations, thickness δ SC of the space-charge layer, the energy gap (E g ), as well as the sensitivity towards CO 2 electro-reduction.
:利用三电极系统,采用静电电位法和电位动力法,在 20 摄氏度下从含有 Cd 2+ 和 S 2 O 32- 离子的酸性溶液中,在杯状改性基底上电化学合成了硫化镉(CdS)。利用 X 射线衍射分析 (XRD)、扫描电子显微镜 (SEM) 和能量色散 X 射线光谱 (EDX) 对制备的薄膜进行了表征。X 射线衍射分析表明,在我们优化的条件下,使用这两种方法沉积的 CdS 薄膜都呈现出纯净的六角形结构。通过 Mott-Schottky 测量,发现电沉积的 CdS 表现为 p 型半导体。根据这项工作中获得的数据,我们发现电沉积技术会影响电沉积材料的形态(通过扫描电镜确认)、载流子浓度、空间电荷层厚度δ SC、能隙(E g )以及对 CO 2 电还原的灵敏度。