Isotopically Enriched Silicon, Germanium, and Their Hydrides for Quantum Computer Development

IF 0.9 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Inorganic Materials Pub Date : 2024-03-11 DOI:10.1134/S0020168523110134
O. Yu. Troshin, V. A. Gavva, A. Yu. Lashkov, A. Yu. Sozin, S. A. Adamchik, A. M. Potapov, P. A. Otopkova, A. D. Bulanov
{"title":"Isotopically Enriched Silicon, Germanium, and Their Hydrides for Quantum Computer Development","authors":"O. Yu. Troshin,&nbsp;V. A. Gavva,&nbsp;A. Yu. Lashkov,&nbsp;A. Yu. Sozin,&nbsp;S. A. Adamchik,&nbsp;A. M. Potapov,&nbsp;P. A. Otopkova,&nbsp;A. D. Bulanov","doi":"10.1134/S0020168523110134","DOIUrl":null,"url":null,"abstract":"<p>In this paper, we report the preparation of high-purity <sup>28</sup>Si silicon and <sup>72</sup>Ge germanium isotopes and their volatile hydrides with controlled concentrations of the <sup>29</sup>Si and <sup>73</sup>Ge nonzero nuclear spin isotopes for producing Si/SiGe heterostructures for quantum computers employing the nuclear spin state as a qubit. We have prepared <sup>28</sup>SiH<sub>4</sub> and <sup>28</sup>Si samples containing about 99.9, 99.99, and 99.999% <sup>28</sup>Si as a major isotope and 340 ± 8, 41.1 ± 4.3, and 11.4 ± 0.1 ppm of the <sup>29</sup>Si isotope. In addition, we obtained high-purity <sup>72</sup>GeH<sub>4</sub> and <sup>72</sup>Ge samples containing about 99.9% <sup>72</sup>Ge as a major isotope and 109.9 ± 9.6 ppm of the <sup>73</sup>Ge isotope.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1163 - 1171"},"PeriodicalIF":0.9000,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S0020168523110134","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

In this paper, we report the preparation of high-purity 28Si silicon and 72Ge germanium isotopes and their volatile hydrides with controlled concentrations of the 29Si and 73Ge nonzero nuclear spin isotopes for producing Si/SiGe heterostructures for quantum computers employing the nuclear spin state as a qubit. We have prepared 28SiH4 and 28Si samples containing about 99.9, 99.99, and 99.999% 28Si as a major isotope and 340 ± 8, 41.1 ± 4.3, and 11.4 ± 0.1 ppm of the 29Si isotope. In addition, we obtained high-purity 72GeH4 and 72Ge samples containing about 99.9% 72Ge as a major isotope and 109.9 ± 9.6 ppm of the 73Ge isotope.

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用于量子计算机开发的同位素富集硅、锗及其氢化物
摘要--在本文中,我们报告了高纯度 28Si 硅和 72Ge 锗同位素及其挥发性氢化物的制备过程,其中含有受控浓度的 29Si 和 73Ge 非零核自旋同位素,用于生产 Si/SiGe 异质结构,该异质结构可将核自旋态作为量子位用于量子计算机。我们制备了 28SiH4 和 28Si 样品,主要同位素 28Si 含量分别为 99.9%、99.99% 和 99.999%,29Si 同位素含量分别为 340 ± 8、41.1 ± 4.3 和 11.4 ± 0.1 ppm。此外,我们还获得了高纯度的 72GeH4 和 72Ge 样品,主要同位素 72Ge 含量约为 99.9%,73Ge 同位素含量为 109.9 ± 9.6 ppm。
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来源期刊
Inorganic Materials
Inorganic Materials 工程技术-材料科学:综合
CiteScore
1.40
自引率
25.00%
发文量
80
审稿时长
3-6 weeks
期刊介绍: Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.
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