Vapor-transport-deposited Sb2S3 thin-film solar cells: Tailoring photovoltaic properties through deposition temperature

IF 5.4 Q2 CHEMISTRY, PHYSICAL Journal of Power Sources Advances Pub Date : 2024-03-11 DOI:10.1016/j.powera.2024.100143
Indu Sharma, Pravin S. Pawar, Rahul K. Yadav, Yong Tae Kim, Neha Bisht, Parag R. Patil, Jaeyeong Heo
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Abstract

Crystal orientation plays a crucial role in the performance of Sb2S3 thin-film solar cells (TFSCs). Among various deposition techniques, vapor transport deposition (VTD) stands out as a viable technique for producing scalable and uniformly deposited thin films, particularly in the solar industry. This study explores temperature-modulated VTD-Sb2S3 deposition to enable efficient carrier transport in photovoltaic cells. In the VTD process, the deposition temperature is altered between 480 °C and 540 °C. XRD, SEM, EDS, and AFM techniques are employed to obtain the characteristics of the Sb2S3 thin films at varying temperatures and evaluate critical features like crystal structure and orientation, surface morphology, composition, and roughness. The prominent crystal orientation changes from the (hk0) to the (hk1) plane after increasing the deposition temperature from 500 to 520 °C. The (211)- and (221)-planes become more prominent when the deposition temperature exceeds 520 °C. The device with the architecture SLG/Mo/Sb2S3/CdS/i-ZnO/AZO/Al, a substrate-configured TFSC, yields a maximum power conversion efficiency of 0.22% when the VTD-Sb2S3 absorber film is deposited at 520 °C. This study presents a promising approach to producing thin films with a preference for specific crystal orientations. The primary aim is to enhance the efficiency of solar cells that utilize VTD-Sb2S3 absorbers.

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气相传输沉积 Sb2S3 薄膜太阳能电池:通过沉积温度调整光伏特性
晶体取向对 Sb2S3 薄膜太阳能电池(TFSC)的性能起着至关重要的作用。在各种沉积技术中,气相传输沉积(VTD)是生产可扩展和均匀沉积薄膜的可行技术,尤其是在太阳能行业。本研究探讨了温度调控 VTD-Sb2S3 沉积,以实现光伏电池中的高效载流子传输。在 VTD 工艺中,沉积温度在 480 °C 和 540 °C 之间变化。我们采用 XRD、SEM、EDS 和原子力显微镜技术来获得不同温度下 Sb2S3 薄膜的特性,并评估晶体结构和取向、表面形态、成分和粗糙度等关键特征。将沉积温度从 500 °C 提高到 520 °C 后,突出的晶体取向从 (hk0) 平面变为 (hk1) 平面。当沉积温度超过 520 ℃ 时,(211)面和(221)面变得更加突出。采用 SLG/Mo/Sb2S3/CdS/i-ZnO/AZO/Al 结构的器件是一种基底配置的 TFSC,当 VTD-Sb2S3 吸收膜沉积温度为 520 ℃ 时,其最大功率转换效率为 0.22%。这项研究提出了一种生产特定晶体取向薄膜的可行方法。其主要目的是提高使用 VTD-Sb2S3 吸收体的太阳能电池的效率。
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来源期刊
CiteScore
9.10
自引率
0.00%
发文量
18
审稿时长
64 days
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