V-Doping Strategy Induces the Construction of the Functionally Complementary Ru2P/V-RuP4 Heterostructures to Achieve Amperometric Current Density for HER
Jie Liu, Jinhong Ren, Yunmei Du, Xiao Chen, Mengmeng Wang, Yanru Liu, Lei Wang
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引用次数: 0
Abstract
It is a great challenge to induce the formation of the RuP4 phase and realize the construction of a metal-rich phase/phosphorus-rich phase-ruthenium phosphide heterostructure by directional regulation of the proportion of P and metal atoms. The ultra-high conductivity of Ru2P and the excellent ability of V-doped RuP4 to absorb/desorb H* are confirmed by density functional theory (DFT) calculations, which laid a theoretical foundation for the construction of a unique Ru2P/V-RuP4 structure to accelerate HER reaction kinetics. This work innovatively uses the V-doping strategy to induce the formation of RuP4 phase with high intrinsic activity, and finally construct V-RuxPy nanosheets with rich Ru/Ru2P/V-RuP4 heterostructures. Thanks to the rich Ru/Ru2P/V-RuP4 heterostructure and the optimization of V dopants, the V-RuxPy catalyst only needs 180 mV to obtain an industrial-grade current density of 1 A cm−2. In summary, this work provides a new idea for the design and performance optimization of ruthenium-based catalysts.
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