S. A. Kukushkin, L. K. Markov, A. V. Osipov, G. V. Svyatets, A. E. Chernyakov, S. I. Pavlov
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引用次数: 0
Abstract
the thermal characteristics of SiC/Si samples obtained by the method of coordinated substitution of atoms at different thicknesses of SiC have been experimentally investigated. It has been found that for SiC thicknesses less than 200 nm, the thermal resistance of SiC/Si is approximately equal to 2 K/W, which is the same as for pure silicon substrate. Such samples will perfectly remove heat from the light-emitting heterostructure grown on SiC/Si. With an increase in the thickness of SiC, the SiC film is detached, which leads to a loss of thermal contact between SiC and Si. The thermal resistance increases at the same time by more than two orders of magnitude. The ability to remove easily the opaque part of the substrate can form the basis of the technology for manufacturing flip-chip LED.
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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