A 90 µW at 1 fps and 1.33 mW at 30 fps 120-dB Intrascene Dynamic Range 640 × 480 Stacked Image Sensor for Autonomous Vision Systems

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-02-27 DOI:10.1109/LSSC.2024.3370797
Pierre-François Rüedi;Riccardo Quaglia;Hans-Rudolf Graf
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Abstract

We present an ultralow-power high dynamic range (DR) image sensor dedicated to autonomous vision systems, produced in a back illuminated 65 nm/40 nm stacked process and based on a time-to-digital pixel with in-pixel A/D conversion and data memory. Key to the low-power consumption is a new in-pixel comparator without dc current consumption. The 120-dB intrascene DR of the sensor, encoded on 10 bits, makes use of a logarithmic data representation. Thanks to the high intrascene DR, no adaptation to the local illumination is necessary. The sensor has a sensitivity of 6.4 V/lux/s, an FPN of 0.6%, and a temporal noise of 11 e−, with a pixel pitch of $6.3 \, \mu \text{m}$ and a fill factor of 86%.
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用于自主视觉系统的级联内动态范围为 640 × 480 的堆叠式图像传感器,1 帧/秒时功耗为 90 µW,30 帧/秒时功耗为 1.33 mW,动态范围为 120 分贝
我们介绍了一种专用于自主视觉系统的超低功耗高动态范围(DR)图像传感器,该传感器采用背照式 65 纳米/40 纳米叠层工艺制造,基于具有像素内 A/D 转换和数据存储器的时间数字像素。低功耗的关键在于一个无直流电流消耗的新型像素内比较器。传感器的级内 DR 为 120 分贝,以 10 位编码,采用对数数据表示。由于级内 DR 高,因此无需适应局部光照。该传感器的灵敏度为 6.4 V/lux/s,FPN 为 0.6%,时间噪声为 11 e-,像素间距为 6.3 \\mu \text{m}$,填充因子为 86%。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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