Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Abstract

Short Step-Bunching (SSB) are a kind of linear defects consisting of convex and concave undulations on the surface of 4H-SiC homoepitaxial layer. In this work, we report the characterizations of SSBs on 12 μm, 50 μm and 85 μm thick SiC epilayers by using optical microscopy (OM), micro-photoluminescence spectra (PL), atomic force microscopy (AFM), chemical mechanical polishing (CMP), molten KOH etching (10 min, 500 ℃) and high resolution transmission electron microscope (HRTEM). It is found that these SSBs are 200 ∼ 250 μm long, perpendicular to the step-flow [11], [12], [13], [14], [15], [16], [17], [18], [19], [20] direction, leading to local rugged surfaces of epilayer. No other poly-types are identified on and around these SSBs. H₂ etching the substrate reveals the existence of short-line defects on the substrate with one or more dislocations (TSD or TED) or an amorphous bump locating in center of most of them. Presumably, the amorphous bump was a kind of carbon inclusion. Based on the above results, we proposed that the SSBs develop from the short-line defects generated when etching the substrates prior to epilayer growth. Elimination of short-line defects by proper etching process is an effective route to reducing the SSBs in 4H-SiC homoepitaxial layers.