Advait Gilankar, Ahmad Islam, M. McCartney, Abishek Katta, Nabasindhu Das, David J. Smith, N. Kalarickal
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引用次数: 0
Abstract
A unique field termination structure combining a 3-step field-plate with N-ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 schottky diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low Ron,sp of 6.2 mΩ-cm2 for SBDs and 6.8 mΩ-cm2 for HJDs, respectively. HJDs showed a 0.8V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ-cm2. The devices also showed low reverse leakage current (<1mA/cm2) and a breakdown voltage of ~1.4 kV. These results offer an alternative simpler route for fabricating high-performance kilo-volt class β-Ga2O3 diode.
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