Pub Date : 2024-07-16DOI: 10.35848/1882-0786/ad63f0
Zuliang Hu, Kyota Shirane, Kota Aramaki, Philippe Leproux, Akihito Inoko, Hideaki KANO, Ayami Matsushima
We analyzed the effects of a hypo-osmotic environment on rat Schwann cells, a type of glial cell surrounding neurons, using ultra-broadband multiplex coherent anti-Stokes Raman scattering (CARS) microscopy. After hypo-osmotic treatment, we detected vacuole-like components in the cytoplasm using both bright-field and CARS spectroscopic imaging. An approach integrating both morphological examination and a spectroscopic analysis based on multiple vibrational bands revealed that these structures are predominantly water-filled, and their characteristics closely resembled those of the vacuoles observed in plant cells.
{"title":"Intracellular vacuoles induced by hypo-osmotic stress visualized by coherent anti-Stokes Raman scattering (CARS) spectroscopic imaging","authors":"Zuliang Hu, Kyota Shirane, Kota Aramaki, Philippe Leproux, Akihito Inoko, Hideaki KANO, Ayami Matsushima","doi":"10.35848/1882-0786/ad63f0","DOIUrl":"https://doi.org/10.35848/1882-0786/ad63f0","url":null,"abstract":"\u0000 We analyzed the effects of a hypo-osmotic environment on rat Schwann cells, a type of glial cell surrounding neurons, using ultra-broadband multiplex coherent anti-Stokes Raman scattering (CARS) microscopy. After hypo-osmotic treatment, we detected vacuole-like components in the cytoplasm using both bright-field and CARS spectroscopic imaging. An approach integrating both morphological examination and a spectroscopic analysis based on multiple vibrational bands revealed that these structures are predominantly water-filled, and their characteristics closely resembled those of the vacuoles observed in plant cells. ","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"4 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141640601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.35848/1882-0786/ad63f2
Masaki Takeguchi, K. Mitsuishi, A. Hashimoto
Graphene-graphene oxide (GO) hybrid liquid cells (LCs) for liquid-phase scanning transmission electron microscopy (STEM) were fabricated using a facile method with commercial graphene on a polymethyl methacrylate sheet and GO on a TEM grid. LCs containing Pt nanoparticles (NPs) and pure water were efficiently produced and observed via STEM. Their composition and thickness were characterized by STEM-electron energy-loss spectroscopy. High-resolution (HR) STEM revealed slow-moving Pt NPs’ atomic structures and fast-moving single Pt atoms at the LC’s thin edges. Minimal damage during HR STEM indicated stable LCs because of their excellent electrical and thermal conductivities and radiolysis species scavenging ability.
{"title":"Facile preparation of graphene-graphene oxide liquid cells and their application in liquid-phase STEM imaging of Pt atoms","authors":"Masaki Takeguchi, K. Mitsuishi, A. Hashimoto","doi":"10.35848/1882-0786/ad63f2","DOIUrl":"https://doi.org/10.35848/1882-0786/ad63f2","url":null,"abstract":"\u0000 Graphene-graphene oxide (GO) hybrid liquid cells (LCs) for liquid-phase scanning transmission electron microscopy (STEM) were fabricated using a facile method with commercial graphene on a polymethyl methacrylate sheet and GO on a TEM grid. LCs containing Pt nanoparticles (NPs) and pure water were efficiently produced and observed via STEM. Their composition and thickness were characterized by STEM-electron energy-loss spectroscopy. High-resolution (HR) STEM revealed slow-moving Pt NPs’ atomic structures and fast-moving single Pt atoms at the LC’s thin edges. Minimal damage during HR STEM indicated stable LCs because of their excellent electrical and thermal conductivities and radiolysis species scavenging ability.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"7 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141641334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.35848/1882-0786/ad63f1
T. Inaba, Yusuke Chiashi, Minoru Ogura, H. Asai, H. Fuketa, H. Oka, S. Iizuka, K. Kato, S. Shitakata, T. Mori
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober to pre-train a 3-hidden-layer neural network (NN) model. Transfer learning based on the NN model was then conducted using another small dataset from 2 bulk MOSFETs. The transfer learning NN model predicted more realistic I-V characteristics and threshold voltages than a control NN model trained using only the small dataset. This study demonstrates cryogenic MOSFET characteristics prediction from a small dataset to reduce time and financial costs.
{"title":"Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets","authors":"T. Inaba, Yusuke Chiashi, Minoru Ogura, H. Asai, H. Fuketa, H. Oka, S. Iizuka, K. Kato, S. Shitakata, T. Mori","doi":"10.35848/1882-0786/ad63f1","DOIUrl":"https://doi.org/10.35848/1882-0786/ad63f1","url":null,"abstract":"\u0000 Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober to pre-train a 3-hidden-layer neural network (NN) model. Transfer learning based on the NN model was then conducted using another small dataset from 2 bulk MOSFETs. The transfer learning NN model predicted more realistic I-V characteristics and threshold voltages than a control NN model trained using only the small dataset. This study demonstrates cryogenic MOSFET characteristics prediction from a small dataset to reduce time and financial costs.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"11 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141642153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.35848/1882-0786/ad63ef
Koji Ito, Hajime Tanaka, M. Horita, J. Suda, Tsunenobu Kimoto
Free electron mobility (µ free) in 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.
{"title":"Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3","authors":"Koji Ito, Hajime Tanaka, M. Horita, J. Suda, Tsunenobu Kimoto","doi":"10.35848/1882-0786/ad63ef","DOIUrl":"https://doi.org/10.35848/1882-0786/ad63ef","url":null,"abstract":"\u0000 Free electron mobility (µ\u0000 free) in 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E\u0000 eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E\u0000 eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"67 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141643162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.35848/1882-0786/ad62d3
Y. Takashima, Kentaro Nagamatsu, M. Haraguchi, Y. Naoi
Dynamic structural color control across a wide spectral range was experimentally achieved via phase retardation between orthogonal polarization states in a Ni/SiO2/Ni-subwavelength grating (SWG) structure. The fabricated Ni/SiO2/Ni-SWG structure exhibited spectrally broadened resonant reflection dips due to the optical damping of Ni. The resonances induced a large phase retardation between the p- and s-polarizations over a wide spectral range, and the retardation changed the reflected polarization states depending on the wavelength. The rotation of the analyzing polarizer enabled the dynamic variation of the reflected structural color from the sample across the wide visible color gamut.
通过在 Ni/SiO2/Ni 亚波长光栅（SWG）结构中正交偏振态之间的相位延迟，实验实现了宽光谱范围内的动态结构颜色控制。由于镍的光学阻尼作用，制备的镍/二氧化硅/镍-亚波长光栅结构显示出光谱拓宽的谐振反射凹陷。共振在很宽的光谱范围内引起了 p 极化和 s 极化之间的较大相位延迟，这种延迟会根据波长改变反射的极化状态。分析偏振片的旋转使样品的反射结构颜色在广泛的可见光色域内发生动态变化。
{"title":"Dynamic wide gamut color generation using highly lossy metal-based metal-dielectric-metal structure","authors":"Y. Takashima, Kentaro Nagamatsu, M. Haraguchi, Y. Naoi","doi":"10.35848/1882-0786/ad62d3","DOIUrl":"https://doi.org/10.35848/1882-0786/ad62d3","url":null,"abstract":"\u0000 Dynamic structural color control across a wide spectral range was experimentally achieved via phase retardation between orthogonal polarization states in a Ni/SiO2/Ni-subwavelength grating (SWG) structure. The fabricated Ni/SiO2/Ni-SWG structure exhibited spectrally broadened resonant reflection dips due to the optical damping of Ni. The resonances induced a large phase retardation between the p- and s-polarizations over a wide spectral range, and the retardation changed the reflected polarization states depending on the wavelength. The rotation of the analyzing polarizer enabled the dynamic variation of the reflected structural color from the sample across the wide visible color gamut.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"72 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141653238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-11DOI: 10.35848/1882-0786/ad622e
Yanni Zhang, Manlin Tong, Xiaoting Rui, Guoping Wang, Fufeng Yang
By embedding center-supported graded-circular-plates (CS-GCPs) into an elastomer, a deep-subwavelength and hydrostatic-pressure-resistant meta-absorber was designed and manufactured for sound absorption (SA) under hydrostatic pressure. The meta-absorber exhibits excellent SAs (>0.842, 0.927 on average) within 500-2000 Hz and quasi-perfect SA (>0.94) within 500-700 Hz with thickness 2% of the sound wavelength. This excellent SA (0.91 on average) is verified experimentally within 1-10 kHz, and maintained high (0.84 on average) under hydrostatic pressure of 1.0 MPa. The exotic functionality arises from enriched local-dynamics by the CS-GCPs and pressure-resistance of the center-support, and provides an effective solution for ultra-broadband low-frequency underwater sound control.
{"title":"Deep-subwavelength and hydrostatic-pressure-resistant meta-absorber for broadband low-frequency underwater sound","authors":"Yanni Zhang, Manlin Tong, Xiaoting Rui, Guoping Wang, Fufeng Yang","doi":"10.35848/1882-0786/ad622e","DOIUrl":"https://doi.org/10.35848/1882-0786/ad622e","url":null,"abstract":"\u0000 By embedding center-supported graded-circular-plates (CS-GCPs) into an elastomer, a deep-subwavelength and hydrostatic-pressure-resistant meta-absorber was designed and manufactured for sound absorption (SA) under hydrostatic pressure. The meta-absorber exhibits excellent SAs (>0.842, 0.927 on average) within 500-2000 Hz and quasi-perfect SA (>0.94) within 500-700 Hz with thickness 2% of the sound wavelength. This excellent SA (0.91 on average) is verified experimentally within 1-10 kHz, and maintained high (0.84 on average) under hydrostatic pressure of 1.0 MPa. The exotic functionality arises from enriched local-dynamics by the CS-GCPs and pressure-resistance of the center-support, and provides an effective solution for ultra-broadband low-frequency underwater sound control.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"79 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad61ba
Yue Tian, Guangtai Lu, Shaoqing Du, K. Kuroyama, K. Hirakawa
We have developed a theory for electromigration at metal nanocontacts. In the proposed theory, a metal atom is removed by kinetic energy transfer from a “lucky electron” that ballistically traverses a metal nanocontact, when the applied voltage exceeds the surface self-diffusion potential of the metal. The histogram of the critical voltage, Vc, at which metal atoms are removed, depends on the temperature as well as the probability for an atom being removed by collision with a lucky electron. The histograms of Vc for Au, Ni, Pd are well explained by the present theory.
{"title":"Theory for electromigration at metal nanocontacts driven by kinetic energy transfer from “lucky electrons”","authors":"Yue Tian, Guangtai Lu, Shaoqing Du, K. Kuroyama, K. Hirakawa","doi":"10.35848/1882-0786/ad61ba","DOIUrl":"https://doi.org/10.35848/1882-0786/ad61ba","url":null,"abstract":"\u0000 We have developed a theory for electromigration at metal nanocontacts. In the proposed theory, a metal atom is removed by kinetic energy transfer from a “lucky electron” that ballistically traverses a metal nanocontact, when the applied voltage exceeds the surface self-diffusion potential of the metal. The histogram of the critical voltage, Vc, at which metal atoms are removed, depends on the temperature as well as the probability for an atom being removed by collision with a lucky electron. The histograms of Vc for Au, Ni, Pd are well explained by the present theory.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"37 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141661758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A single crystalline thin film of Ba2Ti6O13 was grown on the (210) surface of a SrTiO3 single-crystal substrate by pulsed laser deposition. Scanning transmission electron microscopy shows that the Ba2Ti6O13 thin film grew epitaxially with the a-plane, and the b-/c-axes of Ba2Ti6O13 parallel to the (210) plane and the [00-1]/[-120] directions of SrTiO3, respectively. The electrical conductance of the Ba2Ti6O13 film was approximately one order larger than that of reduced SrTiO3-δ single crystal with oxygen deficiency of roughly δ = 0.05. Electronic structure calculations predict that δ is an n-type degenerate semiconductor with spin-split states primarily of Ti 3d orbital.
通过脉冲激光沉积法在 SrTiO3 单晶衬底的 (210) 表面生长出了 Ba2Ti6O13 单晶薄膜。扫描透射电子显微镜显示，Ba2Ti6O13 薄膜是外延生长的，Ba2Ti6O13 的 a 轴和 b/c 轴分别平行于 (210) 平面和 SrTiO3 的 [00-1]/[-120] 方向。Ba2Ti6O13 薄膜的电导率比缺氧约为δ = 0.05 的还原型 SrTiO3-δ 单晶大约大一个数量级。电子结构计算表明，δ 是一种 n 型变质半导体，主要具有钛 3d 轨道的自旋分裂态。
{"title":"Pulsed laser deposition and structural analysis of Ba2Ti6O13 epitaxial thin film on the (210) surface of SrTiO3 single crystal","authors":"Ryuta Kono, Kohei Hieda, T. Tokunaga, Ryoma Tamura, Ryotaro Masamura, yasuyuki hikita, Kazuhiko Kano, Takahisa Yamamoto","doi":"10.35848/1882-0786/ad605d","DOIUrl":"https://doi.org/10.35848/1882-0786/ad605d","url":null,"abstract":"\u0000 A single crystalline thin film of Ba2Ti6O13 was grown on the (210) surface of a SrTiO3 single-crystal substrate by pulsed laser deposition. Scanning transmission electron microscopy shows that the Ba2Ti6O13 thin film grew epitaxially with the a-plane, and the b-/c-axes of Ba2Ti6O13 parallel to the (210) plane and the [00-1]/[-120] directions of SrTiO3, respectively. The electrical conductance of the Ba2Ti6O13 film was approximately one order larger than that of reduced SrTiO3-δ single crystal with oxygen deficiency of roughly δ = 0.05. Electronic structure calculations predict that δ is an n-type degenerate semiconductor with spin-split states primarily of Ti 3d orbital.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"118 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141666884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.35848/1882-0786/ad5fd9
Insung Seo, Shimpei Tanaka, Mitsuru Endo, Y. Gohda
We find a candidate for new permanent-magnet materials with the 1-16 stoichiometry on the basis of first-principles calculations utilizing a materials database. An extremely iron-rich NdFe16 compound shows exceptionally high saturation magnetization with an adequate magnetocrystalline anisotropy energy and Curie temperature. Although it has an excessive formation energy in its binary composition, introducing interstitial light elements into NdFe16 successfully decreases the formation energy while maintaining its superior magnetic properties. The density of states explains the alteration of magnetization from incorporating light elements.
{"title":"Prediction of NdFe16-based permanent-magnet compounds with high magnetization","authors":"Insung Seo, Shimpei Tanaka, Mitsuru Endo, Y. Gohda","doi":"10.35848/1882-0786/ad5fd9","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5fd9","url":null,"abstract":"\u0000 We find a candidate for new permanent-magnet materials with the 1-16 stoichiometry on the basis of first-principles calculations utilizing a materials database. An extremely iron-rich NdFe16 compound shows exceptionally high saturation magnetization with an adequate magnetocrystalline anisotropy energy and Curie temperature. Although it has an excessive formation energy in its binary composition, introducing interstitial light elements into NdFe16 successfully decreases the formation energy while maintaining its superior magnetic properties. The density of states explains the alteration of magnetization from incorporating light elements.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141676986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.35848/1882-0786/ad5f0e
Wenping Hu, Yingjun Zhang, Weihang Zhou
In this work, we report ultra-sensitive detection of geometric fluctuations of semiconductor nanostructures using momentum-filtered spectroscopy. Our strategy is developed based on angle-resolved photoluminescence / absorption spectroscopic imaging technique. By filtering out signals with non-zero in-plane momentum using a confocal pinhole, ultra-sensitive detection of tiny geometric fluctuations with nanometer precision was made possible. In this way, we could optically detect geometric fluctuations of semiconductor nanostructures in real time with a spatial resolution as high as ~ 0.2 nm. Moreover, this technique is widely applicable to nanostructures where optical resonance can be formed.
{"title":"Nanometer-precision measurements of geometric fluctuations via momentum-filtered spectroscopy","authors":"Wenping Hu, Yingjun Zhang, Weihang Zhou","doi":"10.35848/1882-0786/ad5f0e","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5f0e","url":null,"abstract":"\u0000 In this work, we report ultra-sensitive detection of geometric fluctuations of semiconductor nanostructures using momentum-filtered spectroscopy. Our strategy is developed based on angle-resolved photoluminescence / absorption spectroscopic imaging technique. By filtering out signals with non-zero in-plane momentum using a confocal pinhole, ultra-sensitive detection of tiny geometric fluctuations with nanometer precision was made possible. In this way, we could optically detect geometric fluctuations of semiconductor nanostructures in real time with a spatial resolution as high as ~ 0.2 nm. Moreover, this technique is widely applicable to nanostructures where optical resonance can be formed.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"2 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141681281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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