Senescence: A DNA damage response and its role in aging and Neurodegenerative Diseases

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-03-21 DOI:10.3389/fragi.2023.1292053
Tejal Shreeya, Mohd Saifullah Ansari, Prabhat Kumar, Muskan Saifi, A. Shati, Mohammad Y. Alfaifi, S. E. Elbehairi
{"title":"Senescence: A DNA damage response and its role in aging and Neurodegenerative Diseases","authors":"Tejal Shreeya, Mohd Saifullah Ansari, Prabhat Kumar, Muskan Saifi, A. Shati, Mohammad Y. Alfaifi, S. E. Elbehairi","doi":"10.3389/fragi.2023.1292053","DOIUrl":null,"url":null,"abstract":"Senescence is a complicated, multi-factorial, irreversible cell cycle halt that has a tumor-suppressing effect in addition to being a significant factor in aging and neurological diseases. Damaged DNA, neuroinflammation, oxidative stress and disrupted proteostasis are a few of the factors that cause senescence. Senescence is triggered by DNA damage which initiates DNA damage response. The DNA damage response, which includes the formation of DNA damage foci containing activated H2AX, which is a key factor in cellular senescence, is provoked by a double strand DNA break. Oxidative stress impairs cognition, inhibits neurogenesis, and has an accelerated aging effect. Senescent cells generate pro-inflammatory mediators known as senescence-associated secretory phenotype (SASP). These pro-inflammatory cytokines and chemokines have an impact on neuroinflammation, neuronal death, and cell proliferation. While it is tempting to think of neurodegenerative diseases as manifestations of accelerated aging and senescence, this review will present information on brain ageing and neurodegeneration as a result of senescence and DNA damage response.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" 89","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3389/fragi.2023.1292053","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Senescence is a complicated, multi-factorial, irreversible cell cycle halt that has a tumor-suppressing effect in addition to being a significant factor in aging and neurological diseases. Damaged DNA, neuroinflammation, oxidative stress and disrupted proteostasis are a few of the factors that cause senescence. Senescence is triggered by DNA damage which initiates DNA damage response. The DNA damage response, which includes the formation of DNA damage foci containing activated H2AX, which is a key factor in cellular senescence, is provoked by a double strand DNA break. Oxidative stress impairs cognition, inhibits neurogenesis, and has an accelerated aging effect. Senescent cells generate pro-inflammatory mediators known as senescence-associated secretory phenotype (SASP). These pro-inflammatory cytokines and chemokines have an impact on neuroinflammation, neuronal death, and cell proliferation. While it is tempting to think of neurodegenerative diseases as manifestations of accelerated aging and senescence, this review will present information on brain ageing and neurodegeneration as a result of senescence and DNA damage response.
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衰老:DNA 损伤反应及其在衰老和神经退行性疾病中的作用
衰老是一种复杂的、多因素的、不可逆的细胞周期停止现象,除了是导致衰老和神经系统疾病的重要因素外,还具有抑制肿瘤的作用。DNA 损伤、神经炎症、氧化应激和蛋白稳态紊乱是导致衰老的几个因素。衰老是由 DNA 损伤引发的,它启动了 DNA 损伤反应。DNA 损伤反应包括形成含有活化 H2AX 的 DNA 损伤灶,这是导致细胞衰老的关键因素。氧化应激会损害认知能力,抑制神经发生,并有加速衰老的作用。衰老细胞会产生促炎介质,即衰老相关分泌表型(SASP)。这些促炎细胞因子和趋化因子会对神经炎症、神经元死亡和细胞增殖产生影响。虽然人们很容易将神经退行性疾病视为加速衰老和衰老的表现形式,但本综述将介绍有关脑衰老和神经退行性疾病是衰老和 DNA 损伤反应的结果的信息。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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