Research Progress in Dielectric-Layer Material Systems of Memristors

Abstract

With the rapid growth of data storage, traditional von Neumann architectures and silicon-based storage computing technologies will reach their limits and fail to meet the storage requirements of ultra-small size, ultra-high density, and memory computing. Memristors have become a strong competitor in next generation memory technology because of their advantages such as simple device structure, fast erase speed, low power consumption, compatibility with CMOS technology, and easy 3D integration. The resistive medium layer is the key to achieving resistive performance; hence, research on memristors mainly focuses on the resistive medium layer. This paper begins by elucidating the fundamental concepts, structures, and resistive-switching mechanisms of memristors, followed by a comprehensive review of how different resistive storage materials impact memristor performance. The categories of memristors, the effects of different resistive materials on memristors, and the issues are described in detail. Finally, a summary of this article is provided, along with future prospects for memristors and the remaining issues in the large-scale industrialization of memristors.