Ion migration in 3D metal halide perovskite field effect transistors

Electron Pub Date : 2024-03-06 DOI:10.1002/elt2.28
Jinghai Li, Yanyan Gong, William W. Yu
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Abstract

3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes, but the development in field effect transistors (FETs) is limited due to their intrinsic ion migration. Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation, as well as influence the charge carriers transport, leading to non-ideal device characteristics and lower device stability. Here, we provide a concise review that explains the mechanism of ion migration, summarizes the strategies for suppressing ion migration, and concludes with a discussion of the future prospects for 3D perovskite FETs.

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三维金属卤化物包晶场效应晶体管中的离子迁移
三维包晶材料在光伏和发光二极管领域发展迅速,但由于其内在的离子迁移,场效应晶体管(FET)的发展受到限制。包晶场效应晶体管中的离子迁移会屏蔽栅极电场并影响其调制,还会影响电荷载流子的传输,从而导致非理想器件特性和较低的器件稳定性。在此,我们提供了一篇简明综述,解释了离子迁移的机理,总结了抑制离子迁移的策略,最后讨论了三维包晶场效应晶体管的未来前景。
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Issue Information Cover Image, Volume 2, Number 4, November 2024 Cover Image, Volume 2, Number 4, November 2024 Design of long-wavelength infrared InAs/InAsSb type-II superlattice avalanche photodetector with stepped grading layer Recent progress on heteroepitaxial growth of single crystal diamond films
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