Cation doping strategy for improved carrier mobility and stability in metal-oxide Heterojunction thin-film transistors

Abstract

The heterojunction channel architecture has emerged as a viable solution to enhance the performance of metal-oxide thin-film transistors (TFTs), addressing the performance limitations of single-channel counterparts. However, carrier mobility enhancement through a channel thickness design often encounters significant challenges such as the negative threshold voltage (V_th) shift. In this study, we present a cation doping strategy, designed to regulate V_th shift while simultaneously boosting carrier mobility in zinc-tin-oxide (ZTO)-based heterojunction TFTs. A comprehensive investigation of ZTO-based semiconductors was conducted to explore the impact of cation doping on the energy band structure and to find an optimal heterojunction channel structure for high carrier mobility and stability. The resulting ZTO/Ti-doped ZTO (Ti:ZTO) heterojunction TFTs demonstrated a field-effect mobility of 39.7 cm²/Vs, surpassing the performance of ZTO TFTs (16.1 cm²/Vs), with a minimal change in the V_th. Furthermore, the ZTO/Ti:ZTO TFTs exhibited enhanced bias-stress stability compared to the ZTO TFTs. We attribute the improved mobility and stability to the electron accumulation near the oxide channel heterointerface facilitated by band bending and defect passivation effect arising from the Ti:ZTO back-channel layer, respectively.