Pub Date : 2026-01-30DOI: 10.1016/j.mtelec.2026.100198
Sumanta Kumar Karan , Shweta Sharma , Nicholas W.G. Smith , Yannick Pleimling , Stephen McGill , Brenden A. Magill , Shashank Priya , Bed Poudel , Giti A. Khodaparast
Soft magnetic materials are widely used in inductors, transformers, and magnetic sensors. Probing their fundamental properties is therefore crucial to gain insights into improving their static and dynamic magnetic behavior. Herein, we report results on iron-gallium-boron (FeGaB) thin films grown on Si substrate using magnetron co-sputtering. Systematic investigation was carried out to examine the influence of sputtering process parameters on tuning the structure and magnetic properties of FeGaB thin films. By precisely controlling FeGa and B targets’ sputtering power, optimal (Fe1-yGay)1-xBx films were realized that exhibit excellent magnetic softness (Hc ∼ 6-11 Oe), and a remarkably low effective Gilbert damping ( ∼ 0.009-0.015). Furthermore, ultrafast magnetization dynamics characterized using time-resolved magneto-optical Kerr effect (TR-MOKE) revealed slow relaxation times of the excited magnetic state in the FeGaB thin films. Collectively, these results confirm that the developed FeGaB thin films have promising high-frequency applications including magnetic sensors.
{"title":"Tuning magnetic and damping properties of soft ferromagnetic FeGaB thin films for high-frequency applications","authors":"Sumanta Kumar Karan , Shweta Sharma , Nicholas W.G. Smith , Yannick Pleimling , Stephen McGill , Brenden A. Magill , Shashank Priya , Bed Poudel , Giti A. Khodaparast","doi":"10.1016/j.mtelec.2026.100198","DOIUrl":"10.1016/j.mtelec.2026.100198","url":null,"abstract":"<div><div>Soft magnetic materials are widely used in inductors, transformers, and magnetic sensors. Probing their fundamental properties is therefore crucial to gain insights into improving their static and dynamic magnetic behavior. Herein, we report results on iron-gallium-boron (FeGaB) thin films grown on Si substrate using magnetron co-sputtering. Systematic investigation was carried out to examine the influence of sputtering process parameters on tuning the structure and magnetic properties of FeGaB thin films. By precisely controlling FeGa and B targets’ sputtering power, optimal (Fe<sub>1-y</sub>Ga<sub>y</sub>)<sub>1-x</sub>B<sub>x</sub> films were realized that exhibit excellent magnetic softness (H<sub>c</sub> ∼ 6-11 Oe), and a remarkably low effective Gilbert damping (<span><math><msub><mi>α</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow></msub></math></span> ∼ 0.009-0.015). Furthermore, ultrafast magnetization dynamics characterized using time-resolved magneto-optical Kerr effect (TR-MOKE) revealed slow relaxation times of the excited magnetic state in the FeGaB thin films. Collectively, these results confirm that the developed FeGaB thin films have promising high-frequency applications including magnetic sensors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100198"},"PeriodicalIF":7.4,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146078112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-21DOI: 10.1016/j.mtelec.2026.100197
Xuan Sheng , Chunyang Bi , Zhenpeng Zhang , Lan Wang , Huajie Liang , Hongxin Zeng , Sen Gong , Yaxin Zhang , Ziqiang Yang , Shixiong Liang , Haochi Zhang
Terahertz (THz) technology has garnered significant attention in recent years due to its wide-ranging applications in communication, sensing, imaging, and spectroscopy. A prominent trend in this field is the development of miniaturized and functional THz devices that can be implemented on a chip scale. This review provides a comprehensive analysis of the current advancement in THz on-chip devices, emphasizing the role of metachips. It first introduces the spoof plasmonic metachips, which enables low-loss transmission and frequency selection. Then, it covers microstructure resonance metachips, which can reduce complexity. Finally, it discusses the application of metachips in THz system and integration, highlighting their potential in CMOS-based communication and high-density chip-scale interconnects. The review aims to inspire research and guide the development of next-generation THz devices.
{"title":"Terahertz on-chip devices based on metachips","authors":"Xuan Sheng , Chunyang Bi , Zhenpeng Zhang , Lan Wang , Huajie Liang , Hongxin Zeng , Sen Gong , Yaxin Zhang , Ziqiang Yang , Shixiong Liang , Haochi Zhang","doi":"10.1016/j.mtelec.2026.100197","DOIUrl":"10.1016/j.mtelec.2026.100197","url":null,"abstract":"<div><div>Terahertz (THz) technology has garnered significant attention in recent years due to its wide-ranging applications in communication, sensing, imaging, and spectroscopy. A prominent trend in this field is the development of miniaturized and functional THz devices that can be implemented on a chip scale. This review provides a comprehensive analysis of the current advancement in THz on-chip devices, emphasizing the role of metachips. It first introduces the spoof plasmonic metachips, which enables low-loss transmission and frequency selection. Then, it covers microstructure resonance metachips, which can reduce complexity. Finally, it discusses the application of metachips in THz system and integration, highlighting their potential in CMOS-based communication and high-density chip-scale interconnects. The review aims to inspire research and guide the development of next-generation THz devices.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100197"},"PeriodicalIF":7.4,"publicationDate":"2026-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146038113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-14DOI: 10.1016/j.mtelec.2026.100196
Zitong Zhang , Zhuming Liu , Qingzhen Bian
Photomultiplication-type organic photodetector (PM-OPD), which converts the faint photon signals into amplified photocurrents, combines the benefits of intrinsic solution-processability and tailorable spectral response inherited from organic active materials, as well as compact footprint without external pre-amplifiers. Density and distribution of engineered traps within and nearby photoactive layers are keys for efficient PM behaviors in PM-OPDs, which induces trap-induced band bending and facilitates unobstructed carrier injection via the tunneling effect. Hitherto, incorporation of trap states inside photosensitive layer by doping materials or applying a disproportionate electron donor-acceptor ratio within active layer is the widely used method to fabricate PM-OPDs. Despite the great performance enhancements in these PM-OPDs, high bias voltage and slow response speed severely limit their commercial applications. Furthermore, the absence of carrier blocking layers leads to an increase in dark current, which eventually elevates noise level and results in a lower detectivity for weak light signals. To enhance PM device performance, various interface and morphology engineering strategies have been developed, alongside novel multifunctional devices for diverse applications. In this review, we outline recent progress in constructing high-performance PM-OPDs via interface engineering and vertical morphology control of the active layer, focusing on smart structural design and advances in stacking architectures for multifunctional applications. This review not only introduces the latest advances in fabrication strategies and device mechanisms for stacked PM-OPDs, but also provides significant insights into the fabrication of multifunctional applications based on these engineered PM-OPDs, including dual-mode, dual-band devices with distinct spectral range and operation modes, micro-spectrometers, up conversion optical imagers that convert invisible light into visible emission and polarization detectors.
{"title":"Advances in Interface-induced photomultiplication-type organic photodetectors: device physics, design strategies and multifunctional applications","authors":"Zitong Zhang , Zhuming Liu , Qingzhen Bian","doi":"10.1016/j.mtelec.2026.100196","DOIUrl":"10.1016/j.mtelec.2026.100196","url":null,"abstract":"<div><div>Photomultiplication-type organic photodetector (PM-OPD), which converts the faint photon signals into amplified photocurrents, combines the benefits of intrinsic solution-processability and tailorable spectral response inherited from organic active materials, as well as compact footprint without external pre-amplifiers. Density and distribution of engineered traps within and nearby photoactive layers are keys for efficient PM behaviors in PM-OPDs, which induces trap-induced band bending and facilitates unobstructed carrier injection via the tunneling effect. Hitherto, incorporation of trap states inside photosensitive layer by doping materials or applying a disproportionate electron donor-acceptor ratio within active layer is the widely used method to fabricate PM-OPDs. Despite the great performance enhancements in these PM-OPDs, high bias voltage and slow response speed severely limit their commercial applications. Furthermore, the absence of carrier blocking layers leads to an increase in dark current, which eventually elevates noise level and results in a lower detectivity for weak light signals. To enhance PM device performance, various interface and morphology engineering strategies have been developed, alongside novel multifunctional devices for diverse applications. In this review, we outline recent progress in constructing high-performance PM-OPDs via interface engineering and vertical morphology control of the active layer, focusing on smart structural design and advances in stacking architectures for multifunctional applications. This review not only introduces the latest advances in fabrication strategies and device mechanisms for stacked PM-OPDs, but also provides significant insights into the fabrication of multifunctional applications based on these engineered PM-OPDs, including dual-mode, dual-band devices with distinct spectral range and operation modes, micro-spectrometers, up conversion optical imagers that convert invisible light into visible emission and polarization detectors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100196"},"PeriodicalIF":7.4,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146038114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mtelec.2025.100194
Tao Zhou , Xiao Zhao , Ziqing Li
Organic–inorganic halide perovskites have emerged as promising candidates for high-performance photodetection. However, growing high-quality large-size single crystals via the inverse temperature crystallization (ITC) method remains challenging due to uncontrolled nucleation and defect formation. In this work, the acetylcholine bromide is introduced as an organic additive to improve the crystal quality of the MAPbBr3 single crystals (SCs). Acetylcholine bromide dissociates into acetylcholine ions, which coordinate with Pb2+ and Br− via coordination and electrostatic interactions, thereby slowing deposition and improving crystal quality. The as-prepared SCs show enhanced crystallinity, reduced defect density and extended carrier lifetime. The photodetectors based on these crystals achieve an outstanding on/off ratio as high as 2.97 × 104 under 5 V bias voltage and 11.7 mW/cm2 optical power density. Furthermore, the X-ray detectors showed a notably higher μτ of 2.76 × 10−2 cm2 V−1, indicating enhanced charge collection efficiency and significant potential for high-sensitivity radiation detection. This work offers new ideas for ligand design, and provide an effective route for fabricating high-performance perovskite-based optoelectronic devices.
{"title":"Crystallization optimization enables the high-quality perovskite single crystals towards enhanced photodetection","authors":"Tao Zhou , Xiao Zhao , Ziqing Li","doi":"10.1016/j.mtelec.2025.100194","DOIUrl":"10.1016/j.mtelec.2025.100194","url":null,"abstract":"<div><div>Organic–inorganic halide perovskites have emerged as promising candidates for high-performance photodetection. However, growing high-quality large-size single crystals via the inverse temperature crystallization (ITC) method remains challenging due to uncontrolled nucleation and defect formation. In this work, the acetylcholine bromide is introduced as an organic additive to improve the crystal quality of the MAPbBr<sub>3</sub> single crystals (SCs). Acetylcholine bromide dissociates into acetylcholine ions, which coordinate with Pb<sup>2+</sup> and Br<sup>−</sup> via coordination and electrostatic interactions, thereby slowing deposition and improving crystal quality. The as-prepared SCs show enhanced crystallinity, reduced defect density and extended carrier lifetime. The photodetectors based on these crystals achieve an outstanding on/off ratio as high as 2.97 × 10<sup>4</sup> under 5 V bias voltage and 11.7 mW/cm<sup>2</sup> optical power density. Furthermore, the X-ray detectors showed a notably higher <em>μτ</em> of 2.76 × 10<sup>−2</sup> cm<sup>2</sup> V<sup>−1</sup>, indicating enhanced charge collection efficiency and significant potential for high-sensitivity radiation detection. This work offers new ideas for ligand design, and provide an effective route for fabricating high-performance perovskite-based optoelectronic devices.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100194"},"PeriodicalIF":7.4,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145926813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-29DOI: 10.1016/j.mtelec.2025.100195
Ricardo A. Marques Lameirinhas , Maria Amoroso das Neves Costa , Guilherme A. M. P. Infante , Catarina P. Correia V. Bernardo , António Baptista , P. Mendonça dos Santos , João Paulo N. Torres
Concentrator photovoltaics (CPV) is a rapidly advancing technology that enhances energy production by increasing the radiation incident on photovoltaic cells. However, despite this advantage, CPV systems are challenging to model accurately due to the integration of additional components such as complex concentrators, solar trackers and cooling mechanisms. In particular, the optical behaviour of concentrators, both reflective and refractive, is inadequately represented in current models. This article introduces a novel methodology: the approach is based on the propagation of inhomogeneous waves in absorbing media, enabling the characterization of materials using their complex refractive indices. This allows for a more precise determination of optical paths in materials typically used in CPV concentrators, which operate within the ultraviolet, visible, and near-infrared spectral regions. The proposed method is validated through simulations of both reflective and refractive concentrator structures. Results demonstrate that the approach offers a more accurate representation of light–matter interactions. Following validation, the methodology is ready to be applied to more advanced studies, including simulations involving more complex concentrator geometries. Results also show that aluminium V-shaped reflective concentrator are useful in steeper configuration, increasing the conversion efficiency on a silicon solar cell since although the number of rays that reach the cell is reduced, the ones that are absorbed seems to be less affected. On PMMA refractive concentrators, the number of absorbed photons doubles when the concentrator and the GaInP/GaAs/GaAsInP cell are joined together, which may also be observed in each subcell, allowing to absorb radiation from 400 nm to at least 1000 nm.
{"title":"A novel ray tracing method applied on concentrator photovoltaic systems","authors":"Ricardo A. Marques Lameirinhas , Maria Amoroso das Neves Costa , Guilherme A. M. P. Infante , Catarina P. Correia V. Bernardo , António Baptista , P. Mendonça dos Santos , João Paulo N. Torres","doi":"10.1016/j.mtelec.2025.100195","DOIUrl":"10.1016/j.mtelec.2025.100195","url":null,"abstract":"<div><div>Concentrator photovoltaics (CPV) is a rapidly advancing technology that enhances energy production by increasing the radiation incident on photovoltaic cells. However, despite this advantage, CPV systems are challenging to model accurately due to the integration of additional components such as complex concentrators, solar trackers and cooling mechanisms. In particular, the optical behaviour of concentrators, both reflective and refractive, is inadequately represented in current models. This article introduces a novel methodology: the approach is based on the propagation of inhomogeneous waves in absorbing media, enabling the characterization of materials using their complex refractive indices. This allows for a more precise determination of optical paths in materials typically used in CPV concentrators, which operate within the ultraviolet, visible, and near-infrared spectral regions. The proposed method is validated through simulations of both reflective and refractive concentrator structures. Results demonstrate that the approach offers a more accurate representation of light–matter interactions. Following validation, the methodology is ready to be applied to more advanced studies, including simulations involving more complex concentrator geometries. Results also show that aluminium V-shaped reflective concentrator are useful in steeper configuration, increasing the conversion efficiency on a silicon solar cell since although the number of rays that reach the cell is reduced, the ones that are absorbed seems to be less affected. On PMMA refractive concentrators, the number of absorbed photons doubles when the concentrator and the GaInP/GaAs/GaAsInP cell are joined together, which may also be observed in each subcell, allowing to absorb radiation from 400 nm to at least 1000 nm.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100195"},"PeriodicalIF":7.4,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145926728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-16DOI: 10.1016/j.mtelec.2025.100193
Ran Chen , Junming Li , Wuyan Zhao , Yusheng Lei
Halide perovskite single crystals have attracted extensive attention in recent years owing to their outstanding optoelectronic properties, facile solution processability, and superior intrinsic stability, positioning them as promising candidates for next-generation electronic and photonic devices. This review provides a comprehensive overview of the progress achieved in the field, the challenges that remain, and the potential future directions. We begin by summarizing the fundamental properties and key insights obtained from single-crystal studies, followed by an in-depth analysis of crystal growth and thin-film fabrication strategies, including mechanical slicing, space confinement growth, and vapor-phase epitaxy, with particular emphasis on recent breakthroughs. Subsequently, we examine the device-level performance and integration pathways of single-crystal halide perovskites in photovoltaics, light-emitting diodes, photodetectors, and X-ray detection. Finally, we discuss the critical challenges—such as scalable production, long-term stability, and sustainable materials engineering—while outlining future research opportunities, aiming to provide a forward-looking perspective for the practical implementation of halide perovskite single crystals.
{"title":"Halide perovskite single crystals: Progress, challenges, and future perspectives","authors":"Ran Chen , Junming Li , Wuyan Zhao , Yusheng Lei","doi":"10.1016/j.mtelec.2025.100193","DOIUrl":"10.1016/j.mtelec.2025.100193","url":null,"abstract":"<div><div>Halide perovskite single crystals have attracted extensive attention in recent years owing to their outstanding optoelectronic properties, facile solution processability, and superior intrinsic stability, positioning them as promising candidates for next-generation electronic and photonic devices. This review provides a comprehensive overview of the progress achieved in the field, the challenges that remain, and the potential future directions. We begin by summarizing the fundamental properties and key insights obtained from single-crystal studies, followed by an in-depth analysis of crystal growth and thin-film fabrication strategies, including mechanical slicing, space confinement growth, and vapor-phase epitaxy, with particular emphasis on recent breakthroughs. Subsequently, we examine the device-level performance and integration pathways of single-crystal halide perovskites in photovoltaics, light-emitting diodes, photodetectors, and X-ray detection. Finally, we discuss the critical challenges—such as scalable production, long-term stability, and sustainable materials engineering—while outlining future research opportunities, aiming to provide a forward-looking perspective for the practical implementation of halide perovskite single crystals.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100193"},"PeriodicalIF":7.4,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145926814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-13DOI: 10.1016/j.mtelec.2025.100192
Rajat Nagpal , Nicolai Ababii , Oleg Lupan
A novel strategy is required to address global concerns such as indoor air quality (IAQ) monitoring, outdoor pollution, battery monitoring, medical diagnosis, and industrial safety. Metal oxide semiconductor-based gas sensors are evolving by overcoming the associated challenges such as high operating temperature, poor selectivity, poor temporal, and chemical stability with the synergistic effect of Metal Organic Frameworks (MOFs). MOFs are ultra-high porous materials with appropriate morphology that help to improve the cross-sensitivity of the target analyte by tailoring the pore size and their ultra-high surface area. Noble metals with their catalytic effect create additional active sites by creating more oxygen vacancies on the surface. In this review, authors introduce novel high-performance gas sensor design and elaborate all possible sensing mechanisms for various structures including different factor dependence such as receptor factor, transducer factor, and utility factor. The effect of gas deployment methodology and preconcentrator choice on gas sensing measurement are demonstrated. The nature of signal processing and interfacing in smart sensor electronics is elucidated, highlighting their roles in analog-to-digital conversion, noise reduction, data transmission, and system integration for enhanced sensing accuracy and functionality. Ultrafast ultraviolet (UV) sensors and their sensing mechanisms are thoroughly elaborated, emphasizing their rapid response and high sensitivity. In nutshell, authors give a detailed insight to the gas sensing mechanism, technological development, and attempt to find an answer for the existing problems in the field of gas sensing by exploiting some new aiding tools.
{"title":"Comprehensive advances in gas sensing: Mechanisms, material innovations, and applications in environmental and health monitoring","authors":"Rajat Nagpal , Nicolai Ababii , Oleg Lupan","doi":"10.1016/j.mtelec.2025.100192","DOIUrl":"10.1016/j.mtelec.2025.100192","url":null,"abstract":"<div><div>A novel strategy is required to address global concerns such as indoor air quality (IAQ) monitoring, outdoor pollution, battery monitoring, medical diagnosis, and industrial safety. Metal oxide semiconductor-based gas sensors are evolving by overcoming the associated challenges such as high operating temperature, poor selectivity, poor temporal, and chemical stability with the synergistic effect of Metal Organic Frameworks (MOFs). MOFs are ultra-high porous materials with appropriate morphology that help to improve the cross-sensitivity of the target analyte by tailoring the pore size and their ultra-high surface area. Noble metals with their catalytic effect create additional active sites by creating more oxygen vacancies on the surface. In this review, authors introduce novel high-performance gas sensor design and elaborate all possible sensing mechanisms for various structures including different factor dependence such as receptor factor, transducer factor, and utility factor. The effect of gas deployment methodology and preconcentrator choice on gas sensing measurement are demonstrated. The nature of signal processing and interfacing in smart sensor electronics is elucidated, highlighting their roles in analog-to-digital conversion, noise reduction, data transmission, and system integration for enhanced sensing accuracy and functionality. Ultrafast ultraviolet (UV) sensors and their sensing mechanisms are thoroughly elaborated, emphasizing their rapid response and high sensitivity. In nutshell, authors give a detailed insight to the gas sensing mechanism, technological development, and attempt to find an answer for the existing problems in the field of gas sensing by exploiting some new aiding tools.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100192"},"PeriodicalIF":7.4,"publicationDate":"2025-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145926729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-11DOI: 10.1016/j.mtelec.2025.100191
Douglas Henrique Vieira , Emanuel Carlos , Maria Morais , Mayk Rodrigues Nascimento , Rogério Miranda Morais , Elvira Fortunato , Neri Alves , Rodrigo Martins
Metal oxides represent a highly attractive class of materials for the development of sustainable electronic devices, which demands novel strategies that enable component reusability and reduced environmental impact, while maintaining high performance. In the present work, we report the fabrication of printed thin-film transistors (TFTs) based on eco-friendly and solution-processable metal oxides. The device is composed of two independently fabricated parts, one is a spray-coated zinc oxide (ZnO) active layer deposited on patterned ITO/glass electrodes, and the other a reusable gate dielectric/electrode structure comprising screen-printed zirconium oxide (ZrO2) on a carbon nanotubes paper substrate (CNT-paper), with the ZrO2 nanopowder synthesized by microwave-assisted hydrothermal route. These two components are placed in mechanical contact by pressure allowing effective physical contact between the layers while enabling the ZrO2/CNT-paper structure to be detached and reused, as demonstrated across the twelve samples investigated in this study. The obtained TFTs exhibit excellent electrical performance, with an Ion/Ioff > 104, onset voltage as low as Von ≈ 0.79 ± 0.08 V, and subthreshold swing of SS = 119.5 ± 18.7 mV dec−1. Furthermore, the transistors showed excellent stability under cyclic testing, such as multiple sequential double-sweep transfer curves and cycles of dynamic gate-pulsed response measurement. Notably, after detachment and reapplication of the ZrO2/CNT-paper structure onto a new Glass/ITO/ZnO device, the transistor characteristics are preserved, leading to low error and transfer profiles with no visible degradation occurring. Our findings on gate reusability pave the way for more sustainable and modular transistor applications.
{"title":"Reusable printed zirconium oxide on CNT-paper for high performance thin-film transistors","authors":"Douglas Henrique Vieira , Emanuel Carlos , Maria Morais , Mayk Rodrigues Nascimento , Rogério Miranda Morais , Elvira Fortunato , Neri Alves , Rodrigo Martins","doi":"10.1016/j.mtelec.2025.100191","DOIUrl":"10.1016/j.mtelec.2025.100191","url":null,"abstract":"<div><div>Metal oxides represent a highly attractive class of materials for the development of sustainable electronic devices, which demands novel strategies that enable component reusability and reduced environmental impact, while maintaining high performance. In the present work, we report the fabrication of printed thin-film transistors (TFTs) based on eco-friendly and solution-processable metal oxides. The device is composed of two independently fabricated parts, one is a spray-coated zinc oxide (ZnO) active layer deposited on patterned ITO/glass electrodes, and the other a reusable gate dielectric/electrode structure comprising screen-printed zirconium oxide (ZrO<sub>2</sub>) on a carbon nanotubes paper substrate (CNT-paper), with the ZrO<sub>2</sub> nanopowder synthesized by microwave-assisted hydrothermal route. These two components are placed in mechanical contact by pressure allowing effective physical contact between the layers while enabling the ZrO<sub>2</sub>/CNT-paper structure to be detached and reused, as demonstrated across the twelve samples investigated in this study. The obtained TFTs exhibit excellent electrical performance, with an <em>I<sub>on</sub>/I<sub>off</sub></em> > 10<sup>4</sup>, onset voltage as low as <em>V<sub>on</sub></em> ≈ 0.79 ± 0.08 V, and subthreshold swing of <em>SS</em> = 119.5 ± 18.7 mV dec<sup>−1</sup>. Furthermore, the transistors showed excellent stability under cyclic testing, such as multiple sequential double-sweep transfer curves and cycles of dynamic gate-pulsed response measurement. Notably, after detachment and reapplication of the ZrO<sub>2</sub>/CNT-paper structure onto a new Glass/ITO/ZnO device, the transistor characteristics are preserved, leading to low error and transfer profiles with no visible degradation occurring. Our findings on gate reusability pave the way for more sustainable and modular transistor applications.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100191"},"PeriodicalIF":7.4,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145791906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-03DOI: 10.1016/j.mtelec.2025.100186
Raymond Wu , Susumu Otsuki , Haishang Wu
In the past decade, several new informatics models have been introduced in materials science, offering rapid predictions instead of starting from scratch.
Our research aims to achieve the optimization between targeted yield and likelihood. We gathered a matrix of 565 × 264 (264 features and 565 records) of laboratory data and conducted a series of experiments supported by various machine learning (ML) design patterns.
Our research investigates the methods in the areas of 1). data foundation (data creation, data cleansing, data validation, and encoding/decoding); 2). model evaluations, including XGBoost (XGB), random forest (RF), and support vector machines (SVMs); 3). feature evaluation (clustering, feature selection, and feature weight evaluation); and 4). Bayesian optimization, optimization, and masking processes.
Through this research, we explore the genuine methods in Materials Informatics (MI), and our methods such as Regression Deviation Degree Threshold (RDDT) and R:M ratio in data quality and measurement, and masking process in optimization process are novel in MI.
{"title":"The advancement of materials discovery through the applied artificial intelligence","authors":"Raymond Wu , Susumu Otsuki , Haishang Wu","doi":"10.1016/j.mtelec.2025.100186","DOIUrl":"10.1016/j.mtelec.2025.100186","url":null,"abstract":"<div><div>In the past decade, several new informatics models have been introduced in materials science, offering rapid predictions instead of starting from scratch.</div><div>Our research aims to achieve the optimization between targeted yield and likelihood. We gathered a matrix of 565 × 264 (264 features and 565 records) of laboratory data and conducted a series of experiments supported by various machine learning (ML) design patterns.</div><div>Our research investigates the methods in the areas of 1). data foundation (data creation, data cleansing, data validation, and encoding/decoding); 2). model evaluations, including XGBoost (XGB), random forest (RF), and support vector machines (SVMs); 3). feature evaluation (clustering, feature selection, and feature weight evaluation); and 4). Bayesian optimization, optimization, and masking processes.</div><div>Through this research, we explore the genuine methods in Materials Informatics (MI), and our methods such as Regression Deviation Degree Threshold (RDDT) and R:M ratio in data quality and measurement, and masking process in optimization process are novel in MI.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100186"},"PeriodicalIF":7.4,"publicationDate":"2025-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145791907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtelec.2025.100182
Jiaxin Chang , Shengnan Zhang , Wen Zhang , Jixing Liu , Qingyang Wang , Fang Yang , Chengshan Li , Jianfeng Li , Pingxiang Zhang
Superconducting materials exhibit the zero-resistance effect, the Meissner effect, and the quantum tunneling effect (Josephson effect). Therefore, they possess profound practical significance and immense developmental prospects in diverse domains, such as electric power, healthcare, transportation, quantum computing, energy, national defense and scientific experimentation. The critical current density (Jc) serves as the fundamental metric for evaluating the current carrying performance of superconducting materials in practical applications, which is predominantly influenced by three factors, namely the intrinsic physical properties, intergranular connectivity, and flux pinning performance. Among them, the flux pinning performance is the significant parameter of superconducting materials to determine the current carrying capacity under magnetic field. Therefore, the enhancement of flux pinning properties has become a central focus in contemporary superconducting research. This review briefly introduced the theoretical foundations of flux pinning mechanisms in superconducting materials. Furthermore, a comparative analysis was conducted on the introduction technologies of artificial pinning centers, including particle irradiation, elemental doping and second-phase particle embedding, across high-temperature superconducting material of BSCCO, REBCO, MgB2, and iron-based superconductors. Finally, the prospects for the enhancement strategies of flux pinning in practical high-temperature superconducting materials were discussed.
{"title":"Research on the application and flux pinning of practical high-temperature superconductors","authors":"Jiaxin Chang , Shengnan Zhang , Wen Zhang , Jixing Liu , Qingyang Wang , Fang Yang , Chengshan Li , Jianfeng Li , Pingxiang Zhang","doi":"10.1016/j.mtelec.2025.100182","DOIUrl":"10.1016/j.mtelec.2025.100182","url":null,"abstract":"<div><div>Superconducting materials exhibit the zero-resistance effect, the Meissner effect, and the quantum tunneling effect (Josephson effect). Therefore, they possess profound practical significance and immense developmental prospects in diverse domains, such as electric power, healthcare, transportation, quantum computing, energy, national defense and scientific experimentation. The critical current density (<em>J</em><sub>c</sub>) serves as the fundamental metric for evaluating the current carrying performance of superconducting materials in practical applications, which is predominantly influenced by three factors, namely the intrinsic physical properties, intergranular connectivity, and flux pinning performance. Among them, the flux pinning performance is the significant parameter of superconducting materials to determine the current carrying capacity under magnetic field. Therefore, the enhancement of flux pinning properties has become a central focus in contemporary superconducting research. This review briefly introduced the theoretical foundations of flux pinning mechanisms in superconducting materials. Furthermore, a comparative analysis was conducted on the introduction technologies of artificial pinning centers, including particle irradiation, elemental doping and second-phase particle embedding, across high-temperature superconducting material of BSCCO, REBCO, MgB<sub>2</sub>, and iron-based superconductors. Finally, the prospects for the enhancement strategies of flux pinning in practical high-temperature superconducting materials were discussed.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100182"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145623822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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