Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY Accounts of Chemical Research Pub Date : 2024-03-25 DOI:10.1088/1361-6641/ad31c5

Zhonghao Sun, Jianxun Dai, Huolin Huang, Nan Sun, Jiayu Zhang, Yun Lei, Dawei Li, Kaiming Ma, Huimin Yu, Yanhong Liu, Hui Huang, Yung C Liang

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Abstract

In this work, p-n junction vertical gate (JVG) and polarization junction vertical gate (PVG) structures are for the first time proposed to improve the performance of GaN-based enhancement-mode (E-mode) high electron mobility transistor (HEMT) devices. Compared with the control group featuring the vertical gate structure, a highly improved threshold voltage (V _th) and breakdown voltage (BV) are achieved with the assistance of the extended depletion regions formed by inserting single or composite interlayers. The structure dimensions and physical parameters for device interlayers are optimized by TCAD simulation to adjust the spatial electric field distribution and hence improve the device off-state characteristics. The optimal JVG-HEMT device can reach a V _th of 3.4 V, a low on-state resistance (R _on) of 0.64 mΩ cm², and a BV of 1245 V, while the PVG-HEMT device exhibits a V _th of 3.7 V, an R _on of 0.65 mΩ cm², and a BV of 1184 V, which could be further boosted when an additional field plate design is employed. Thus, the figure-of-merit value of JVG- and PVG-HEMT devices rise to 2.4 and 2.2 GW cm⁻², respectively, much higher than that for the VG-HEMT control group (1.0 GW cm⁻²). This work provides a novel technical approach to realize higher-performance E-mode HEMTs.

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通过采用垂直栅极结构和复合夹层提高增强型氮化镓基 HEMT 功率器件的性能*

本研究首次提出了 p-n 结垂直栅极 (JVG) 和极化结垂直栅极 (PVG) 结构，以改善基于氮化镓的增强型（E-mode）高电子迁移率晶体管 (HEMT) 器件的性能。与采用垂直栅结构的对照组相比，通过插入单层或复合夹层形成的扩展耗尽区，阈值电压（Vth）和击穿电压（BV）得到了极大改善。通过 TCAD 仿真优化了器件夹层的结构尺寸和物理参数，以调整空间电场分布，从而改善器件的离态特性。最佳 JVG-HEMT 器件的 Vth 值为 3.4 V，导通电阻（Ron）低至 0.64 mΩ cm2，BV 值为 1245 V，而 PVG-HEMT 器件的 Vth 值为 3.7 V，Ron 值为 0.65 mΩ cm2，BV 值为 1184 V，如果采用额外的场板设计，BV 值还能进一步提高。因此，JVG-HEMT 器件和 PVG-HEMT 器件的功率值分别上升到 2.4 和 2.2 GW cm-2，远远高于 VG-HEMT 对照组（1.0 GW cm-2）。这项研究为实现更高性能的 E 模式 HEMT 提供了一种新的技术方法。

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.