{"title":"Structural characterization, optical, and magnetic properties of MgTbxFe2−xO4 nano ferrite particles using a combustion technique","authors":"Gollapudi Koteswari , N. Hari kumar , D. Ravinder","doi":"10.1016/j.nxnano.2024.100050","DOIUrl":null,"url":null,"abstract":"<div><p>The citrate gel auto-combustion method was utilised to synthesis terbium-doped nanoparticles (NP) with considerable concentrations of magnesium ferrites, using the chemical formula MgTbxFe<sub>2−x</sub>O<sub>4</sub> and an X range of 0.000 to 0.0030 (with an X step of 0.0005). At 300 K, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transition electron microscopy (TEM), and magnetic characteristics were all determined. The XRD and TEM images indicate nanoscale ranges as well as the cubic spinel structure, which is merely phased, and confirm the normal crystallite size. The lattice parameter and volume decrease as density increases with doping of terbium. The images from the FESEM. It is evident that the grain clusters were found within the material. In the specimen's case, the highly interacting grains were found. The fourier-transformed infrared spectroscopy <strong>(</strong>FTIR) data clearly suggests that two metallic bands have formed, confirming the cubic spinel ferrites. There are two primary absorption bands visible between 200 and 650 cm<sup>−1</sup>. The UV–vis investigation demonstrates that the calculated direct band gap energy values have a violet shift. The band gab energy was reported in the range of 415.30 eV to 375.12 eV.The magnetic properties of the hysteresis loops indicate a transition from hard magnetic moments to soft magnetic moments. All magnetic properties were reduced when the Tb<sup>3+</sup> ion was substituted. They are excellent for switching memory storage devices as well as telecommunications.</p></div>","PeriodicalId":100959,"journal":{"name":"Next Nanotechnology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2949829524000111/pdfft?md5=5563e17a9dd68be5cbadffcd5bf300cd&pid=1-s2.0-S2949829524000111-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Next Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2949829524000111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The citrate gel auto-combustion method was utilised to synthesis terbium-doped nanoparticles (NP) with considerable concentrations of magnesium ferrites, using the chemical formula MgTbxFe2−xO4 and an X range of 0.000 to 0.0030 (with an X step of 0.0005). At 300 K, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transition electron microscopy (TEM), and magnetic characteristics were all determined. The XRD and TEM images indicate nanoscale ranges as well as the cubic spinel structure, which is merely phased, and confirm the normal crystallite size. The lattice parameter and volume decrease as density increases with doping of terbium. The images from the FESEM. It is evident that the grain clusters were found within the material. In the specimen's case, the highly interacting grains were found. The fourier-transformed infrared spectroscopy (FTIR) data clearly suggests that two metallic bands have formed, confirming the cubic spinel ferrites. There are two primary absorption bands visible between 200 and 650 cm−1. The UV–vis investigation demonstrates that the calculated direct band gap energy values have a violet shift. The band gab energy was reported in the range of 415.30 eV to 375.12 eV.The magnetic properties of the hysteresis loops indicate a transition from hard magnetic moments to soft magnetic moments. All magnetic properties were reduced when the Tb3+ ion was substituted. They are excellent for switching memory storage devices as well as telecommunications.