A 6.4-Gb/s/pin nand Flash Memory Multichip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-03-14 DOI:10.1109/LSSC.2024.3377263
Shinichi Ikeda;Akira Iwata;Goichi Otomo;Tomoaki Suzuki;Hiroaki Iijima;Mikio Shiraishi;Shinya Kawakami;Masatomo Eimitsu;Yoshiki Matsuoka;Kiyohito Sato;Shigehiro Tsuchiya;Yoshinori Shigeta;Takuma Aoyama
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Abstract

This letter describes a NAND flash memory multichip package (NAND MCP) incorporating a developed LSI interface (IF) Chip (Bridge Chip) in which the IF to and from the solid-state drive (SSD) controller has twice the speed as that of the IF to and from the NAND dies even with multiple packages on each printed circuit board (PCB) channel. This NAND MCP allows to reduce the number of NAND IF channels on the PCB while retaining the total bandwidth of the SSD and increasing the capacity. The Bridge Chip employs a 2:1 frequency multiplying function to bridge the speed gap, a fast-lock phase-locked loop (PLL) with an extended pull-in range and 16-cycle lock time to enhance the IF performance with its input-jitter filtering effect, and equalizers to compensate for intersymbol interference and reflected noise in up to a 4-drop configuration. The Bridge Chip implemented in a 12-nm CMOS process is demonstrated at 6.4 Gb/s/pin with 2.85-pJ/b I/O energy efficiency in a read operation. The NAND MCP incorporating the Bridge Chip and eight 1-Tb NAND dies achieves data transmission to and from field-programmable gate array (FPGA) at twice the speed of the NAND IF in a 2-drop configuration.
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采用倍频桥接芯片的 6.4 GB/s/针 nand 闪存多芯片封装,用于可扩展性能和容量的存储系统
本信介绍了一种 NAND 闪存多芯片封装(NAND MCP),其中集成了开发的 LSI 接口(IF)芯片(桥接芯片),即使每个印刷电路板(PCB)通道上有多个封装,与固态硬盘(SSD)控制器之间的 IF 速度也是与 NAND 芯片之间的 IF 速度的两倍。这种 NAND MCP 可以减少 PCB 上 NAND IF 通道的数量,同时保持固态硬盘的总带宽并增加容量。桥接芯片采用 2:1 倍频功能来缩小速度差距,采用具有扩展拉入范围和 16 个周期锁定时间的快速锁定锁相环 (PLL),通过其输入抖动滤波效果来提高中频性能,并采用均衡器来补偿高达 4 滴配置中的符号间干扰和反射噪声。桥接芯片采用 12 纳米 CMOS 工艺实现,在读取操作中的能效为 6.4 Gb/s/pin,I/O 能效为 2.85-pJ/b。集成了桥接芯片和 8 个 1-Tb NAND 芯片的 NAND MCP 在 2 滴配置中实现了与现场可编程门阵列 (FPGA) 之间的数据传输,传输速度是 NAND IF 的两倍。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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