Time-Resolved Sensitivity of a Cadmium-Doped Copper Oxide Thin Film as a Chlorine Gas Detector

Turki Alotibi, Waleed Shirbeeny, Ahmed Alshahrie, Mohammed Aida, Jawid Iqbal
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Abstract

Due to its strong affinity for chlorine gas, Cd can potentially form CdCl 2 . Cd-doped CuO thin films are sensitive to chlorine gas, as careful inclusion of Cd in the CuO crystal structure modifies the energy gap depending on the dop - ant concentration. We employed spray pyrolysis to deposit Cd-doped CuO on fluorine tin oxide (FTO) while heat - ing the substrate to 500 °C. The X-ray diffraction (XRD) analysis revealed that Cd was interstitially incorporated in the CuO lattice structure, as verified by scanning electron microscopy (SEM) imaging. The photoluminescence study demonstrated that increasing the Cd concentration in CuO resulted in higher emission intensity, providing valuable insights into Cu 2+ and O 2-energy levels. Exposing a Cd-doped CuO thin film to chlorine gas modifies the bandgap, depending on the Cd concentration. The fluctuation in the bandgap energy of copper oxide doped with cadmium indicates the chlorine gas concentration nearby. Time-resolved measurements for the I-V characteristics of the thin film revealed considerable current variation during the exposure to chlorine gas.
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作为氯气探测器的掺镉氧化铜薄膜的时间分辨灵敏度
由于镉对氯气有很强的亲和力,因此有可能形成 CdCl 2。掺杂镉的氧化铜薄膜对氯气很敏感,因为掺杂镉的氧化铜晶体结构会根据掺杂浓度改变能隙。我们采用喷雾热解方法在氟锡氧化物(FTO)上沉积掺杂镉的氧化铜,同时将基底加热到 500 °C。X 射线衍射(XRD)分析表明,镉被间隙掺入到氧化铜晶格结构中,扫描电子显微镜(SEM)成像也验证了这一点。光致发光研究表明,CuO 中 Cd 浓度的增加会导致更高的发射强度,这为了解 Cu 2+ 和 O 2 的能级提供了宝贵的信息。将掺镉的氧化铜薄膜暴露在氯气中会改变其带隙,这取决于镉的浓度。掺杂镉的氧化铜带隙能的波动表明附近的氯气浓度。对薄膜的 I-V 特性进行的时间分辨测量显示,在暴露于氯气的过程中,电流变化相当大。
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