High efficient net gain and low noise figure based vertical cavity semiconductor optical amplifiers for wavelength division multiplexing applications

R. T. Prabu, Arunsundar Balasubramanian, Nithyasundari Balakrishnan, Jeneetha Jebanazer, Mohana Sundaram Kandasamy, Nishanthi Govindaswamy, Rashida Maher Mahmoud
{"title":"High efficient net gain and low noise figure based vertical cavity semiconductor optical amplifiers for wavelength division multiplexing applications","authors":"R. T. Prabu, Arunsundar Balasubramanian, Nithyasundari Balakrishnan, Jeneetha Jebanazer, Mohana Sundaram Kandasamy, Nishanthi Govindaswamy, Rashida Maher Mahmoud","doi":"10.1515/joc-2024-0048","DOIUrl":null,"url":null,"abstract":"\n This paper has demonstrated the high efficient net gain and low noise figure based vertical cavity semiconductor light amplifiers for wavelength division multiplexing applications. Previous study on the chip reflective gain variations versus SOA current under temperature effects is clarified. We have transferred light semiconductor amplifiers for wavelength multiplexing schemes applications. Amplifier output power is demonstrated with bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The amplifier output noise variations are clarified against the bias current and amplifier active layer region width variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The output OSNR variations are studied clearly and deeply against the bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The signal loss is demonstrated versus both active layer width/length and temperature based optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio at optimum input signal power of 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. SOA amplifier output power can be enhance with the management of both bias current and input signal power and the reduction of active amplifier length. The amplifier output noise can be enhance with the management of both bias current and input signal power and the reduction of active amplifier width. Output OSNR system can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier gain can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier noise figure can be improved with the management of both bias current and input signal power and the reduction of active amplifier width. The signal loss can be controlled and managed by adjusting optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio, optimum active layer/with and the presence of room temperature.","PeriodicalId":509395,"journal":{"name":"Journal of Optical Communications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Optical Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/joc-2024-0048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper has demonstrated the high efficient net gain and low noise figure based vertical cavity semiconductor light amplifiers for wavelength division multiplexing applications. Previous study on the chip reflective gain variations versus SOA current under temperature effects is clarified. We have transferred light semiconductor amplifiers for wavelength multiplexing schemes applications. Amplifier output power is demonstrated with bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The amplifier output noise variations are clarified against the bias current and amplifier active layer region width variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The output OSNR variations are studied clearly and deeply against the bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The signal loss is demonstrated versus both active layer width/length and temperature based optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio at optimum input signal power of 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. SOA amplifier output power can be enhance with the management of both bias current and input signal power and the reduction of active amplifier length. The amplifier output noise can be enhance with the management of both bias current and input signal power and the reduction of active amplifier width. Output OSNR system can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier gain can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier noise figure can be improved with the management of both bias current and input signal power and the reduction of active amplifier width. The signal loss can be controlled and managed by adjusting optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio, optimum active layer/with and the presence of room temperature.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于垂直腔半导体光放大器的高效净增益和低噪声系数,适用于波分复用应用
本文展示了波分复用应用中基于垂直腔半导体光放大器的高效净增益和低噪声系数。之前关于温度效应下芯片反射增益变化与 SOA 电流关系的研究得到了澄清。我们已将光半导体放大器应用于波分复用方案。在输入信号功率为 3、6.5、10 dBm,波长为 1550 nm,最佳放大器约束因子为 0.45 的条件下,放大器输出功率随偏置电流和放大器有源层区域长度的变化而变化。基于 3、6.5、10 dBm、1550 nm 波长的输入信号功率和 0.45 的最佳放大器约束因子,根据偏置电流和放大器有源层区域宽度的变化,阐明了放大器输出噪声的变化。根据 3、6.5、10 dBm、1550 nm 波长的输入信号功率和 0.45 的最佳放大器约束因子,对偏置电流和放大器有源层区域长度的变化引起的输出 OSNR 变化进行了清晰而深入的研究。在最佳输入信号功率为 10 dBm、波长为 1550 nm 和最佳放大器约束因子为 0.45 的条件下,根据 30% 的镓核心掺杂比和 28% 的砷化物包层掺杂比,展示了有源层宽度/长度和温度对信号损耗的影响。通过管理偏置电流和输入信号功率以及减少有源放大器的长度,可以提高 SOA 放大器的输出功率。通过管理偏置电流和输入信号功率以及减少有源放大器的宽度,可以提高放大器的输出噪声。通过管理偏置电流和输入信号功率以及减少有源放大器的长度,可以改善输出 OSNR 系统。通过管理偏置电流和输入信号功率以及减少有源放大器长度,可提高 SOA 放大器增益。通过管理偏置电流和输入信号功率以及减少有源放大器宽度,可以提高 SOA 放大器的噪声系数。通过调整最佳的 30% 镓核掺杂比和 28% 的砷化包层掺杂比、最佳的有源层/有源层以及室温,可以控制和管理信号损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Management of lateral misalignment loss and total insertion loss with beam waist control in high contrast single mode coupling fibers Optimizing Fi-Wi network performance through advanced multiplexing techniques: a comparative analysis for enhanced quality metrics Simulation design for Ro-FSO communications system by digital modulation schemes Enabling ultra-high bit rate transmission with CFBG as dispersion compensator in an OptiSpan 240 km DWDM network Various graded index plastic optical fiber performance signature capability with the optimum dispersion control for indoor coverage applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1