Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-03-26 DOI:10.1007/s11664-024-10997-y

Omendra Kr Singh, Vaithiyanathan Dhandapani, Baljit Kaur

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Abstract

A partially extended germanium-source double-gate tunnel field-effect transistor (PEGeDG-TFET) utilizes line and point tunneling phenomena to achieve low ambipolar current and high ON-state current. These advantages are accompanied by an exceptionally low OFF-state current (I_OFF) and subthreshold swing with resilience against short-channel effects. However, PEGeDG-TFETs face challenges in terms of large variations in I_OFF and changes in electrical characteristics with temperature due to the change in the bandgap of semiconductor material. In this article, we explore the temperature-associated variations of a PEGeDG-TFET under the influence of interface trap charges (ITCs) for reliability assessment. Results revealed that the Shockley–Read–Hall phenomenon is dominant at lower gate bias voltage, leading to I_OFF degeneration at high temperature. The band-to-band tunneling (BTBT) phenomenon experiences minor variations at higher temperature and gate voltage. Additionally, at high temperature (500 K), it is discovered that the threshold voltage, cut-off frequency, gain–bandwidth product, transconductance–frequency product, intrinsic gain, and transit time decrease, thus limiting the device reliability in the avionics sector where temperatures fall below 410 K with consistent performance of analog/radio-frequency (RF) parameters. This investigation was conducted via simulations on a Silvaco ATLAS simulator considering ITCs and temperature variations.

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部分扩展 Ge 源双栅极隧道场效应晶体管 (DG-TFET) 中电气参数的研究

一种部分扩展的锗源双栅隧道场效应晶体管（PEGeDG-TFET）利用线隧穿和点隧穿现象来实现低双极电流和高导通电流。这些优点伴随着异常低的关闭状态电流（IOFF）和亚阈值摆幅，具有抗短通道效应的弹性。然而，由于半导体材料带隙的变化，pegedg - tfet在IOFF和电特性随温度的变化方面面临着巨大的挑战。在本文中，我们探讨了在界面陷阱电荷（ITCs）影响下PEGeDG-TFET的温度相关变化，以进行可靠性评估。结果表明，在较低的栅极偏置电压下，以Shockley-Read-Hall现象为主，导致IOFF在高温下退化。在较高的温度和栅极电压下，带到带隧穿现象变化不大。此外，在高温（500 K）下，发现阈值电压、截止频率、增益带宽乘积、跨导频率乘积、固有增益和传输时间降低，从而限制了温度低于410 K且模拟/射频（RF）参数性能一致的航空电子设备领域的设备可靠性。该研究通过在Silvaco ATLAS模拟器上进行模拟，考虑了ITCs和温度变化。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.