{"title":"A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET","authors":"Afshin Dadkhah, A. Daghighi","doi":"10.61186/jiaeee.21.1.39","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"69 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Association of Electrical and Electronics Engineers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.61186/jiaeee.21.1.39","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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