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A LOW POWER DUAL-MODE Reconfigurable SIGMA-DELTA MODULATOR DESIGN FOR GSM / WCDMA STANDARDS 针对 GSM / WCDMA 标准的低功耗双模可重构 SIGMA-DELTA 调制解调器设计
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.77
Majeed Charoosaei, K. Monfaredi, M. Yousefi
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引用次数: 0
Prediction of effective management of electronic banking in the ease of transmitting information using data mining techniques 利用数据挖掘技术预测电子银行有效管理信息传输的难易程度
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.121
Mahdi Sahandjami, Morteza Morteza Mohammadi Zanjireh, Mahdi Bahaghighat, Morteza Hadizadeh
{"title":"Prediction of effective management of electronic banking in the ease of transmitting information using data mining techniques","authors":"Mahdi Sahandjami, Morteza Morteza Mohammadi Zanjireh, Mahdi Bahaghighat, Morteza Hadizadeh","doi":"10.61186/jiaeee.21.1.121","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.121","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"57 32","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140399963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of the effect of size, material, position and period of metal nanowires on the performance of thin film solar cells 分析金属纳米线的尺寸、材料、位置和周期对薄膜太阳能电池性能的影响
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.47
Mohammad Eskandari, Amir Habibzadeh-Sharif, Behnam Mohammadi
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引用次数: 0
Analysis of the Effects of Temperature and Vertical Electric Field on the Propagation of Transverse Electric Waves in Silicene Monolayer 温度和垂直电场对硅单层中横向电波传播的影响分析
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.55
Hamed Emami Nejad, A. Mir, A. Farmani, R. Talebzadeh
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引用次数: 0
Ultra-wideband low noise amplifier using resistive feedback and current reause 使用电阻反馈和电流抑制的超宽带低噪声放大器
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.97
Shirin Saraslani, Abbas Golmakani
{"title":"Ultra-wideband low noise amplifier using resistive feedback and current reause","authors":"Shirin Saraslani, Abbas Golmakani","doi":"10.61186/jiaeee.21.1.97","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.97","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"189 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140286944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Presentation of Multi Inputs Full Ternary Comparator with Carbon Nano Tube Field Effect Transistor 介绍使用碳纳米管场效应晶体管的多输入全三元比较器
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.1
M. Yousefi
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引用次数: 0
A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET 计算双绝缘金刚石上硅 MOSFET 前后栅阈值电压的新型电容模型
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.39
Afshin Dadkhah, A. Daghighi
{"title":"A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET","authors":"Afshin Dadkhah, A. Daghighi","doi":"10.61186/jiaeee.21.1.39","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.39","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"69 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140407377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quasi-floating gate MOSFET-based low power current mirror 基于准浮栅 MOSFET 的低功耗电流镜
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.27
Masoud nori, Mehdi Bekrani
{"title":"Quasi-floating gate MOSFET-based low power current mirror","authors":"Masoud nori, Mehdi Bekrani","doi":"10.61186/jiaeee.21.1.27","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.27","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"74 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140399397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Analytical Computation of Threshold Voltage for Ultra-Thin Double Insulating Silicon-on-Diamond MOSFET 超薄双绝缘金刚石上硅 MOSFET 阈值电压的分析计算
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.17
Majid HeidarZadeh, A. Daghighi, Zahra Sepehri
{"title":"An Analytical Computation of Threshold Voltage for Ultra-Thin Double Insulating Silicon-on-Diamond MOSFET","authors":"Majid HeidarZadeh, A. Daghighi, Zahra Sepehri","doi":"10.61186/jiaeee.21.1.17","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.17","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"188 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140286488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis, design and implementation of a new high step-up DC-DC converter with active coupled inductor network for a sustainable energy system 为可持续能源系统分析、设计和实现带主动耦合电感网络的新型高升压直流-直流转换器
Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.85
Fatemeh Parin, Ebrahim Farshidi, R. Fani
{"title":"Analysis, design and implementation of a new high step-up DC-DC converter with active coupled inductor network for a sustainable energy system","authors":"Fatemeh Parin, Ebrahim Farshidi, R. Fani","doi":"10.61186/jiaeee.21.1.85","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.85","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"28 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140398900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Journal of Association of Electrical and Electronics Engineers
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