Investigation of Filament Formation and Surface Perturbation in Nanoscale-Y2O3 Memristor: A Physical Modeling Approach

Abstract

A comprehensive physical electro-thermal modeling approach is explored to investigate the intricate mechanisms underlying filament formation and the effect of surface perturbation in nanoscale Y₂O₃-based memristors. The approach integrates fundamental principles of solid-state physics, electrochemistry, and materials science to develop a detailed physical model that captures the key phenomena governing the operation of Y₂O₃ memristors. The simulation is carried out in a semiconductor physics-based tool, i.e., COMSOL Multiphysics with a defined MATLAB script, wherein simulation is based on the minimum free energy of the used materials at an applied input voltage. The fundamental processes in filament growth include ion migration, redox reactions, and vacancy dynamics within the Y₂O₃ lattice. Furthermore, the influence of surface perturbation on the overall device behavior, grain boundaries, and electrode interactions impact on memristor performance is also investigated. The surface perturbations significantly influenced the switching dynamics of the memristor, including variations in switching voltages, ON/OFF current ratio, filament radius, and filament temperature during the switching process. Therefore, the presented findings contribute to a deeper understanding of the physical mechanisms at play in Y₂O₃ memristors, offering valuable guidance for the design and engineering of these nanoscale devices for next-generation memory and neuromorphic computing applications. This physical modeling approach not only enhances our comprehension of memristor behavior but also paves the way for the development of more efficient and reliable memristor-based technologies.