Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-02-23 DOI:10.1007/s11664-024-10952-x

Wendy L. Sarney, Mihee Ji, Asher C. Leff, LeighAnn S. Larkin, Gregory A. Garrett, Anand V. Sampath, Michael Wraback

{"title":"Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy","authors":"Wendy L. Sarney, Mihee Ji, Asher C. Leff, LeighAnn S. Larkin, Gregory A. Garrett, Anand V. Sampath, Michael Wraback","doi":"10.1007/s11664-024-10952-x","DOIUrl":null,"url":null,"abstract":"<div><p>We report on the microstructure of high Al content (0.65 < <i>x</i> < 0.78) Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N planar films grown in the III-rich regime by plasma-assisted molecular beam epitaxy (PA-MBE) at elevated growth temperatures from 800°C to 950°C. Films grown at or above 900°C have lateral periodic contrast oscillations in high-angle annular dark field (HAADF) images from transmission electron microscopy (TEM). The features are perpendicular to the growth direction and arise from spatial variations in the ratio of Al to Ga atoms. These oscillations begin at the Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/AlN interface and are different from previously observed inhomogeneities that arose from spontaneous ordering and random compositional fluctuations. As prior studies have shown, compositional anomalies can improve certain optical properties, these vertical periodic structures observed here merit further investigation.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"53 6","pages":"2789 - 2797"},"PeriodicalIF":2.5000,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-024-10952-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

We report on the microstructure of high Al content (0.65 < x < 0.78) Al_xGa_1−xN planar films grown in the III-rich regime by plasma-assisted molecular beam epitaxy (PA-MBE) at elevated growth temperatures from 800°C to 950°C. Films grown at or above 900°C have lateral periodic contrast oscillations in high-angle annular dark field (HAADF) images from transmission electron microscopy (TEM). The features are perpendicular to the growth direction and arise from spatial variations in the ratio of Al to Ga atoms. These oscillations begin at the Al_xGa_1−xN/AlN interface and are different from previously observed inhomogeneities that arose from spontaneous ordering and random compositional fluctuations. As prior studies have shown, compositional anomalies can improve certain optical properties, these vertical periodic structures observed here merit further investigation.

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高温等离子体辅助分子束外延生长的高铝含量 AlxGa1-xN 合金中自发侧向异质结构的形成

我们报道了等离子体辅助分子束外延（PA-MBE）在800°C至950°C的生长温度下在富iii区生长的高Al含量（0.65 < x < 0.78） AlxGa1−xN平面薄膜的微观结构。在900°C或以上生长的薄膜在透射电子显微镜（TEM）的高角度环形暗场（HAADF）图像中具有横向周期性对比振荡。这些特征垂直于生长方向，是由Al原子与Ga原子之比的空间变化引起的。这些振荡开始于AlxGa1−xN/AlN界面，与之前观察到的自发有序和随机成分波动引起的不均匀性不同。正如先前的研究表明，成分异常可以改善某些光学性质，这些垂直周期结构值得进一步研究。图形抽象

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.