SnO-SnO2 Nanocomposites Based pn Diode: In Situ Synthesis, Characterization and Fabrication of Device for pn Diode Applicability

Advanced Materials Research Pub Date : 2024-01-31 DOI:10.4028/p-6v9m01

R. Narzary, Tani Chekke, S. Ngadong, Biswarup Satpati, S. Bayan, Upamanyu Das

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Abstract

We report on an approach for the in-situ synthesis (chemical method based) of SnO-SnO2 nanocomposites followed by characterisation (including morphological, chemical, structural and optical) and investigation of the electrical properties of the nanocomposites with reference to the as-synthesized SnO2 nanoparticles. Compared to spherical SnO2 particles, the SnO phase is found existing in the form of sheet like morphology. It has been found that through controlling of the Sn:OH precursor ratio is effective for the achievement of SnO phase. Compared to the pristine SnO2 nanoparticles, the current-voltage (I-V) characteristics of the nanocomposites show the p-n junction characteristics. The observation of rectification ratio 2.05 indicates the excellent rectifying property of the nanocomposites due to the presence of p-type SnO phase. Further, exploration of the I-V characteristics has revealed the dominance of space-charge limited current transport mechanism for the nanocomposites sample. The lattice defects are discovered to be the cause of the transport mechanism in the nanocomposites sample.

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基于 SnO-SnO2 纳米复合材料的 pn 二极管：原位合成、表征和制造适用于 pn 二极管的器件

我们报告了一种原位合成 SnO-SnO2 纳米复合材料的方法（基于化学方法），随后对纳米复合材料进行了表征（包括形态、化学、结构和光学），并参照合成的 SnO2 纳米粒子对其电气性能进行了研究。与球形二氧化锡颗粒相比，二氧化锡相以片状形态存在。研究发现，通过控制 Sn:OH 前驱体的比例可以有效地获得氧化锡相。与原始 SnO2 纳米粒子相比，纳米复合材料的电流-电压（I-V）特性显示出 p-n 结特性。整流比为 2.05，表明由于存在 p 型氧化锡相，纳米复合材料具有优异的整流特性。此外，对 I-V 特性的研究表明，纳米复合材料样品的主要电流传输机制是空间电荷受限。发现晶格缺陷是纳米复合材料样品传输机制的原因。

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Advanced Materials Research

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