Performance of tomato grown under different water replacement depths and silicon application forms

G. S. Wenneck, R. Saath, Roberto Rezende, Daniele de Souza Terassi, Vinícius Villa e Vila, Karym Mayara de Oliveira, A. L. Moro, Paulo Sérgio Lourenço de Freitas
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Abstract

Water management has a direct impact on plant development, and under deficit conditions, it often results in reduced yields. Silicon (Si), however, has the potential to alleviate stress and enhance plant performance under unfavorable conditions. This study aimed to analyze the performance of tomato plants cultivated under different water replacement depths and forms of silicon application. The experiment was laid out in a completely randomized design with a 2 × 4 factorial arrangement represented by two water replacement depths (60% and 100% of crop evapotranspiration - ETc) and four forms of silicon application (without application, soil application - full dose, soil application - split dose, and foliar applications). Four replications were used. The plants were cultivated in a protected environment using drip irrigation for water replacement, and silicon oxide served as the source of the element. The analyzed parameters included daily evapotranspiration, leaf spectral reflectance, mass accumulation (root, stem, and leaf), yield indices (fruit weight, plant yield, and defective fruits), water productivity, and post-harvest fruit weight loss. The imposition of water deficit (60% of ETc) in tomato leads to reduced crop development and yield, with the effects partially mitigated by the application of silicon. Conversely, under conditions of adequate water replacement (100% of ETc), silicon application contributes to increased development and yield of tomato. The application of silicon in the soil, whether in a full or split dose, demonstrates a more favorable response in vegetative indices and yield for tomato.
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不同换水深度和施用硅形式下番茄的生长表现
水分管理对植物生长有直接影响,在缺水条件下,往往会导致减产。然而,硅(Si)具有在不利条件下缓解压力和提高植物表现的潜力。本研究旨在分析番茄植株在不同换水深度和施硅形式下的表现。实验采用完全随机设计,2 × 4 因子排列,即两种水分置换深度(作物蒸散量 - ETc 的 60% 和 100% )和四种硅施用形式(不施用、土壤施用 - 全剂量、土壤施用 - 分剂量和叶面施用)。采用四次重复。植物在受保护的环境中栽培,采用滴灌换水,氧化硅作为元素来源。分析参数包括日蒸散量、叶片光谱反射率、质量积累(根、茎和叶)、产量指数(果实重量、植株产量和残次果)、水分生产率和采后果实重量损失。番茄缺水(ETc 的 60%)会导致作物生长和产量下降,而施用硅可以部分缓解这种影响。相反,在水分充足的条件下(100% ETc),施硅有助于提高番茄的生长发育和产量。在土壤中施用硅,无论是全剂量还是分剂量,都会对番茄的植被指数和产量产生更有利的影响。
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