Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer

Abstract

Schottky Barrier Diodes have been studied largely in literature for their superior properties over p-n barriers in a wide range of components like solar cells, sensors, gate stacks of FETs, back-end-switch arrays, and super capacitor applications basically as a test tool to produce better performance devices. The main performance parameter of these devices is measured by their conduction mechanisms under desired conditions like temperature, pressure, voltage, frequency and radiation. And one of the pivotal enhancements on device performance is provided by interlayer addition through the sandwich design. And presence of these interlayers with on-purpose impurities, develops even more control of conduction mechanisms over semiconducting and metal layers. As an adjustable host material for impurity atoms, DLC, which also has outstanding specifications under thermal, chemical and physical conditions, is a good candidate for interlayer tailoring specifically when used with doping atoms like nitrogen (N), copper (Cu), gold (Au), titanium (Ti) and silicone (Si). This study investigates the impedance response of the fabricated device with an N-doped DLC interlayer. The results revealed that the reminiscent matrixial distribution of charges should be affecting the conduction path through horizontal and vertical dielectric relaxation appearance with altering relative permittivity due to different bond formations between different phases of the same material in the insulating layer. The supported results by phase angle changes, showing frequency-adjustable working conditions offer that the selective electrical conduction can be tuned.