{"title":"Reliability Assessment of an Ultrathin Dielectric Transduced Micromechanical Resonator","authors":"Satish K Verma, Pawan Kumar, Bhaskar Mitra","doi":"10.1109/MEMS58180.2024.10439342","DOIUrl":null,"url":null,"abstract":"This paper presents breakdown and reliability study in an ultrathin dielectric transduced micromechanical device. A metal-insulator-metal (100nm:12.7nm:400nm) ring shaped structure is fabricated. The device geometry can be used as a flexural resonator as well as a switch or an actuator. The fabricated device has a mode frequency of 15.85MHz and quality factor of 4054 in air, and a deflection of 171nm at 3.3V dc bias without experiencing pull-in. The device has a stability for 10594sec at a continuous 5V dc bias, followed by degradation and eventual breakdown at 16646sec. Experimental results show that the device endured over 26,600sec before breaking down for continuous bipolar bias of +/-5V pulse voltage with a frequency of 2Hz, serving as a performance benchmark.","PeriodicalId":518439,"journal":{"name":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"49 3","pages":"1106-1109"},"PeriodicalIF":0.0000,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMS58180.2024.10439342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents breakdown and reliability study in an ultrathin dielectric transduced micromechanical device. A metal-insulator-metal (100nm:12.7nm:400nm) ring shaped structure is fabricated. The device geometry can be used as a flexural resonator as well as a switch or an actuator. The fabricated device has a mode frequency of 15.85MHz and quality factor of 4054 in air, and a deflection of 171nm at 3.3V dc bias without experiencing pull-in. The device has a stability for 10594sec at a continuous 5V dc bias, followed by degradation and eventual breakdown at 16646sec. Experimental results show that the device endured over 26,600sec before breaking down for continuous bipolar bias of +/-5V pulse voltage with a frequency of 2Hz, serving as a performance benchmark.
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