Yeeun Kim, Hyunjun Lee, Cheongbeom Lee, Beomjin Kim, Nayoon Kwon, Taewoong Son, Jaehee Lee, Jaegwan Sin, Taejoo Shin, Jungyup Yang, Kyeounghak Kim, Jangwon Seo
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引用次数: 0
Abstract
We incorporated triphenylsulfonium triflate (TPST), a sulfonium-based additive consisting of polar triflate and bulky hydrophobic phenyl rings, to the PbI2 precursor solution for preparation of less-defect perovskite film via two-step fabrication. TPST induced localized alterations in the array of the PbI2 structure due to its large size, thereby forming a more discontinuous and coarser surface with a greater number of pinholes and subsequently facilitating more efficient organic–inorganic reactions. As a result, we achieved the production of thick perovskite films with enlarged granules and decreased PbI2 residuals in the two-step fabrication process. Furthermore, TPST facilitated the passivation of bulk film defects by increasing the binding energy with the defects. Consequently, the ITO/SnO2 np-based device and the FTO/CBD SnO2-based device obtained the best PCEs of 23.88% and 24.30%, respectively. Furthermore, the moisture stability of the perovskite was improved by the hydrophobic character of the TPST additive.