{"title":"Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods","authors":"Masatomo Sumiya , Hajime Fujikura , Yoshitaka Nakano , Shuhei Yashiro , Yasuo Koide , Tohru Honda","doi":"10.1016/j.jcrysgro.2024.127701","DOIUrl":null,"url":null,"abstract":"<div><p>Bulk GaN samples were characterized by both photothermal deflection spectroscopy (PDS) and steady-state photocapacitance (SSPC) methods. The PDS signal intensity in the bandgap was found to correlate quantitatively with the defect density estimated by the SSPC method. The defect density of GaN bulks fabricated by hydride vapor phase epitaxy (HVPE) was decreased by controlling the incorporation of carbon and silicon impurities. Differences in the reciprocal of the slope near the valence band maximum and the signal intensity in the bandgap among HVPE GaN bulks could be detected by PDS, although they had the same crystalline quality. PDS can be used to evaluate the GaN bulks that have been improved with a highly insulative property caused by Fe- doping or low carbon incorporation.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001362","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Bulk GaN samples were characterized by both photothermal deflection spectroscopy (PDS) and steady-state photocapacitance (SSPC) methods. The PDS signal intensity in the bandgap was found to correlate quantitatively with the defect density estimated by the SSPC method. The defect density of GaN bulks fabricated by hydride vapor phase epitaxy (HVPE) was decreased by controlling the incorporation of carbon and silicon impurities. Differences in the reciprocal of the slope near the valence band maximum and the signal intensity in the bandgap among HVPE GaN bulks could be detected by PDS, although they had the same crystalline quality. PDS can be used to evaluate the GaN bulks that have been improved with a highly insulative property caused by Fe- doping or low carbon incorporation.
采用光热偏转光谱法（PDS）和稳态光电容法（SSPC）对块状氮化镓样品进行了表征。发现带隙中的 PDS 信号强度与 SSPC 方法估计的缺陷密度存在定量相关性。通过控制碳和硅杂质的加入量，降低了氢化物气相外延（HVPE）法制备的 GaN 块体的缺陷密度。尽管 HVPE GaN 块体的结晶质量相同，但通过 PDS 可以检测到它们价带最大值附近斜率的倒数和带隙信号强度的差异。PDS 可用于评估因掺杂铁或低碳而具有高绝缘性能的 GaN 块体。
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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