A Wideband Low-Noise Linear LiDAR Analog Front-End Achieving 1.6-GHz Bandwidth, 2.7-pA/Hz0.5 Input-Referred Noise, and 103-dBΩ Transimpedance Gain

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-03-19 DOI:10.1109/LSSC.2024.3378093
Zhao Zhang;Yidan Zhang;Yiqing Xu;Xinyu Shen;Guike Li;Nan Qi;Jian Liu;Nanjian Wu;Liyuan Liu
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Abstract

This letter presents a low-noise wideband analog front-end (AFE) circuit for long-range linear LiDAR. The nMOS feedforward transimpedance amplifier with inner feedback resistor (NFFR-TIA) is proposed to extend the bandwidth to around 400 MHz and reduce the input referred noise (IRN) concurrently with high-transimpedance gain and improved stability. Two stage continuous-time linear feedback circuits are introduced to further boost the bandwidth to over-1 GHz with flatten in-band AC response and negligible extra noise. Fabricated in a 40-nm CMOS process, our AFE achieves an average IRN of 2.7 pA/Hz $^{\mathrm{ 0.5}}$ , 1.6-GHz bandwidth, 103-dB $\Omega $ transimpedance gain, and 10-mW power consumption.
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宽带低噪声线性激光雷达模拟前端,实现 1.6 GHz 带宽、2.7-pA/Hz0.5 输入参考噪声和 103-dBΩ 跨阻增益
本文介绍了一种用于长距离线性激光雷达的低噪声宽带模拟前端(AFE)电路。该电路采用带内反馈电阻器的 nMOS 前馈跨阻放大器 (NFFR-TIA),将带宽扩展到约 400 MHz,并降低了输入参考噪声 (IRN),同时实现了高跨阻增益并提高了稳定性。此外,还引入了两级连续时间线性反馈电路,进一步将带宽提高到 1 GHz 以上,并实现了平坦的带内交流响应和可忽略不计的额外噪声。我们的 AFE 采用 40 纳米 CMOS 工艺制造,平均 IRN 为 2.7 pA/Hz $^{\mathrm{ 0.5}}$,带宽为 1.6 GHz,跨阻增益为 103-dB $\Omega $,功耗为 10-mW。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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