The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

IF 3 3区工程技术 Q2 CHEMISTRY, ANALYTICAL Micromachines Pub Date : 2024-04-04 DOI:10.3390/mi15040496

Chaeyun Kim, Hyowon Yoon, Yeongeun Park, Sangyeob Kim, Gyuhyeok Kang, Dong-Seok Kim, Ogyun Seok

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Abstract

We investigated the effects of gate bias regarding the degradation of electrical characteristics during gamma irradiation. Moreover, we observed the punch through failure of 1.2 kV rated commercial Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) due to the influence of gate bias. In addition, the threshold voltage (VT) and on-resistance (Ron) of the SiC MOSFETs decreased significantly by the influence of gate bias during gamma irradiation. We extracted the concentration of carriers and fixed charge (QF) in oxide using N-type SiC MOS capacitors and Transmission Line Measurement (TLM) patterns to analyze the effects of gamma irradiation. The Total Ionizing Dose (TID) effect caused by high-energy gamma-ray irradiation resulted in an increase in the concentration of holes and QF in both SiC and oxide. To analyze the phenomenon for increment of hole concentration in the device under gate bias, we extracted the subthreshold swing of SiC MOSFETs and verified the origin of TID effects accelerated by the gate bias. The QF and doping concentration of p-well values extracted from the experiments were used in TCAD simulations (version 2022.03) of the planar SiC MOSFET. As a result of analyzing the energy band diagram at the channel region of 1.2 kV SiC MOSFETs, it was verified that punch-through can occur in 1.2 kV SiC MOSFETs when the gate bias is applied, as the TID effect is accelerated by the gate bias.

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辐照伽马射线期间栅极偏置条件对 1.2 kV SiC MOSFET 的影响

我们研究了栅极偏压对伽马辐照期间电气特性退化的影响。此外，我们还观察了额定电压为 1.2 kV 的商用碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）在栅极偏压影响下的击穿故障。此外，在伽马辐照期间，碳化硅 MOSFET 的阈值电压（VT）和导通电阻（Ron）受栅极偏压的影响而显著下降。我们利用 N 型 SiC MOS 电容器和传输线测量（TLM）模式提取了氧化物中的载流子浓度和固定电荷（QF），以分析伽马辐照的影响。高能伽马射线辐照引起的总电离剂量（TID）效应导致 SiC 和氧化物中的空穴浓度和 QF 增加。为了分析栅极偏压下器件中空穴浓度增加的现象，我们提取了 SiC MOSFET 的阈下摆动，并验证了栅极偏压加速 TID 效应的来源。从实验中提取的 p 孔 QF 值和掺杂浓度值被用于平面 SiC MOSFET 的 TCAD 仿真（版本 2022.03）。通过分析 1.2 kV SiC MOSFET 沟道区域的能带图，验证了当施加栅极偏压时，1.2 kV SiC MOSFET 中会出现穿孔现象，因为栅极偏压加速了 TID 效应。

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来源期刊

Micromachines NANOSCIENCE & NANOTECHNOLOGY-INSTRUMENTS & INSTRUMENTATION

CiteScore

5.20

自引率

14.70%

发文量

1862

审稿时长

16.31 days

期刊介绍： Micromachines (ISSN 2072-666X) is an international, peer-reviewed open access journal which provides an advanced forum for studies related to micro-scaled machines and micromachinery. It publishes reviews, regular research papers and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.