首页 > 最新文献

Micromachines最新文献

英文 中文
A Precessing-Coin-like Rotary Actuator for Distal Endoscope Scanners: Proof-of-Concept Study.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-20 DOI: 10.3390/mi16010111
Nirvana Gharib, Mohammad Reza Yousefi Darestani, Kenichi Takahata

This paper presents, for the first time, a rotary actuator functionalized by an inclined disc rotor that serves as a distal optical scanner for endoscopic probes, enabling side-viewing endoscopy in luminal organs using different imaging/analytic modalities such as optical coherence tomography and Raman spectroscopy. This scanner uses a magnetic rotor designed to have a mirror surface on its backside, being electromagnetically driven to roll around the cone-shaped hollow base to create a motion just like a precessing coin. An optical probing beam directed from the probe's optic fiber is passed through the hollow cone to be incident and bent on the back mirror of the rotating inclined rotor, circulating the probing beam around the scanner for full 360° sideway imaging. This new scanner architecture removes the need for a separate prism mirror and holding mechanics to drastically simplify the scanner design and thus, potentially enhancing device miniaturization and reliability. The first proof-of-concept is developed using 3D printing and experimentally analyzed to reveal the ability of both angular stepping at 45° and high-speed rotation up to 1500 rpm within the biologically safe temperature range, a key function for multimodal imaging. Preliminary optical testing demonstrates continuous circumferential scanning of the laser beam with no blind spot caused by power leads to the actuator. The results indicate the fundamental feasibility of the developed actuator as an endoscopic distal scanner, a significant step to further development toward advancing optical endoscope technology.

{"title":"A Precessing-Coin-like Rotary Actuator for Distal Endoscope Scanners: Proof-of-Concept Study.","authors":"Nirvana Gharib, Mohammad Reza Yousefi Darestani, Kenichi Takahata","doi":"10.3390/mi16010111","DOIUrl":"10.3390/mi16010111","url":null,"abstract":"<p><p>This paper presents, for the first time, a rotary actuator functionalized by an inclined disc rotor that serves as a distal optical scanner for endoscopic probes, enabling side-viewing endoscopy in luminal organs using different imaging/analytic modalities such as optical coherence tomography and Raman spectroscopy. This scanner uses a magnetic rotor designed to have a mirror surface on its backside, being electromagnetically driven to roll around the cone-shaped hollow base to create a motion just like a precessing coin. An optical probing beam directed from the probe's optic fiber is passed through the hollow cone to be incident and bent on the back mirror of the rotating inclined rotor, circulating the probing beam around the scanner for full 360° sideway imaging. This new scanner architecture removes the need for a separate prism mirror and holding mechanics to drastically simplify the scanner design and thus, potentially enhancing device miniaturization and reliability. The first proof-of-concept is developed using 3D printing and experimentally analyzed to reveal the ability of both angular stepping at 45° and high-speed rotation up to 1500 rpm within the biologically safe temperature range, a key function for multimodal imaging. Preliminary optical testing demonstrates continuous circumferential scanning of the laser beam with no blind spot caused by power leads to the actuator. The results indicate the fundamental feasibility of the developed actuator as an endoscopic distal scanner, a significant step to further development toward advancing optical endoscope technology.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767618/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement and Analysis of Interconnects' Resonance and Signal/Power Integrity Degradation in Glass Packages.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-20 DOI: 10.3390/mi16010112
Youngwoo Kim

In this article, resonance phenomena of high-speed interconnects and power delivery networks in glass packages are measured and analyzed. The resonances are generated in the interconnection by the physical dimension, cancelation of reactance components, and modes. When the resonances are generated in the operation frequency band, the signal/power integrity of the interconnect can be affected. As such, resonances generated in high-speed interconnects increase insertion loss, which degrades signal integrity. Also, resonances of the power delivery network (PDN) associated with boundary conditions increase PDN impedance, which degrades power integrity by generating power/ground noise and return current discontinuity of through vias. Recently, glass packaging has been gaining more attention due to its advantages associated with low substrate loss and large dimensions compared to silicon wafers. However, the low loss of the substrate and process variation may affect the resonance properties of interconnects. The resonance impacts on signal/power integrity must be analyzed, and mitigation plans should be proposed to maximize the advantages of the glass packaging technology. To analyze the resonance impacts on signal/power integrity, various glass package test vehicles are designed and fabricated. The fabricated test vehicles include transmission lines, PDNs, and patterns to measure an interaction between the through via and PDN. First, transmission line patterns that have 50-ohm characteristic impedance are measured. Due to the process variations, quarter-wave resonances are monitored, and at those frequencies, a sharp increase in insertion loss is observed, which deteriorates the signal integrity of the interconnect. Various PDN patterns are measured in the frequency domain, and regardless of the PDN shape, PDN impedance peaks are observed at the mode resonance frequencies. Due to a low-loss characteristic of the glass substrate, sharp PDN impedance peaks are generated at these frequencies. Also, at these frequencies, both signal and power integrity degradations are measured and analyzed. To fully benefit from the advantages of glass packaging technology, a thorough electrical performance analysis should be conducted to avoid resonances in the target frequency range.

{"title":"Measurement and Analysis of Interconnects' Resonance and Signal/Power Integrity Degradation in Glass Packages.","authors":"Youngwoo Kim","doi":"10.3390/mi16010112","DOIUrl":"10.3390/mi16010112","url":null,"abstract":"<p><p>In this article, resonance phenomena of high-speed interconnects and power delivery networks in glass packages are measured and analyzed. The resonances are generated in the interconnection by the physical dimension, cancelation of reactance components, and modes. When the resonances are generated in the operation frequency band, the signal/power integrity of the interconnect can be affected. As such, resonances generated in high-speed interconnects increase insertion loss, which degrades signal integrity. Also, resonances of the power delivery network (PDN) associated with boundary conditions increase PDN impedance, which degrades power integrity by generating power/ground noise and return current discontinuity of through vias. Recently, glass packaging has been gaining more attention due to its advantages associated with low substrate loss and large dimensions compared to silicon wafers. However, the low loss of the substrate and process variation may affect the resonance properties of interconnects. The resonance impacts on signal/power integrity must be analyzed, and mitigation plans should be proposed to maximize the advantages of the glass packaging technology. To analyze the resonance impacts on signal/power integrity, various glass package test vehicles are designed and fabricated. The fabricated test vehicles include transmission lines, PDNs, and patterns to measure an interaction between the through via and PDN. First, transmission line patterns that have 50-ohm characteristic impedance are measured. Due to the process variations, quarter-wave resonances are monitored, and at those frequencies, a sharp increase in insertion loss is observed, which deteriorates the signal integrity of the interconnect. Various PDN patterns are measured in the frequency domain, and regardless of the PDN shape, PDN impedance peaks are observed at the mode resonance frequencies. Due to a low-loss characteristic of the glass substrate, sharp PDN impedance peaks are generated at these frequencies. Also, at these frequencies, both signal and power integrity degradations are measured and analyzed. To fully benefit from the advantages of glass packaging technology, a thorough electrical performance analysis should be conducted to avoid resonances in the target frequency range.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767268/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Dielectric Elastomer Actuator and Its Application in Flexible Gripper.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-19 DOI: 10.3390/mi16010107
Xiaoyu Meng, Jiaqing Xie, Haoran Pang, Wenchao Wei, Jiping Niu, Mingqiang Zhu, Fang Gu, Xiaohuan Fan, Haiyan Fan

Dielectric elastomer actuators (DEAs) are difficult to apply to flexible grippers due to their small deformation range and low output force. Hence, a DEA with a large bending deformation range and output force was designed, and a corresponding flexible gripper was developed to realize the function of grasping objects of different shapes. The relationship between the pre-stretch ratio and DEA deformation degree was tested by experiments. Based on the performance test results of the dielectric elastomer (DE), the bending deformation process of DEAs with different shapes was simulated by Finite Element Method (FEM) simulation. DEAs with different shapes were prepared through laser cutting and the relationship between the voltage and the bending angle, and the output force of the DEAs was measured. The result shows that under uniaxial stretching, the deformation of the DEA in the stretching direction gradually increases and decreases in the unstretched direction with the increase in the pre-stretch ratio. Under biaxial stretching, DEA deformation increases with the increase in the pre-stretch ratio. The shape of the DEA has a certain influence on the bending deformation range under the same conditions, and the elliptical DEA has a larger bending deformation range and higher output force compared with the rectangular DEA and the trapezium DEA. The elliptical DEA can produce a bending deformation of 40° and an output force of 37.2 mN at a voltage of 24 kV. The three-finger flexible gripper composed of an elliptical DEA can realize the grasping of a paper cup.

{"title":"Design of Dielectric Elastomer Actuator and Its Application in Flexible Gripper.","authors":"Xiaoyu Meng, Jiaqing Xie, Haoran Pang, Wenchao Wei, Jiping Niu, Mingqiang Zhu, Fang Gu, Xiaohuan Fan, Haiyan Fan","doi":"10.3390/mi16010107","DOIUrl":"10.3390/mi16010107","url":null,"abstract":"<p><p>Dielectric elastomer actuators (DEAs) are difficult to apply to flexible grippers due to their small deformation range and low output force. Hence, a DEA with a large bending deformation range and output force was designed, and a corresponding flexible gripper was developed to realize the function of grasping objects of different shapes. The relationship between the pre-stretch ratio and DEA deformation degree was tested by experiments. Based on the performance test results of the dielectric elastomer (DE), the bending deformation process of DEAs with different shapes was simulated by Finite Element Method (FEM) simulation. DEAs with different shapes were prepared through laser cutting and the relationship between the voltage and the bending angle, and the output force of the DEAs was measured. The result shows that under uniaxial stretching, the deformation of the DEA in the stretching direction gradually increases and decreases in the unstretched direction with the increase in the pre-stretch ratio. Under biaxial stretching, DEA deformation increases with the increase in the pre-stretch ratio. The shape of the DEA has a certain influence on the bending deformation range under the same conditions, and the elliptical DEA has a larger bending deformation range and higher output force compared with the rectangular DEA and the trapezium DEA. The elliptical DEA can produce a bending deformation of 40° and an output force of 37.2 mN at a voltage of 24 kV. The three-finger flexible gripper composed of an elliptical DEA can realize the grasping of a paper cup.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767311/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Chip Morphology in Elliptical Vibration Micro-Turning of Silk Fibroin.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-19 DOI: 10.3390/mi16010110
Zhengjian Wang, Xichun Luo, Jining Sun, Wenkun Xie, Yinchuan Piao, Yonghang Jiang, Xiuyuan Chen

Silk fibroin, known for its biocompatibility and biodegradability, holds significant promise for biomedical applications, particularly in drug delivery systems. The precise fabrication of silk fibroin particles, specifically those ranging from tens of nanometres to hundreds of microns, is critical for these uses. This study introduces elliptical vibration micro-turning as a method for producing silk fibroin particles in the form of cutting chips to serve as carriers for drug delivery systems. A hybrid finite element and smoothed particle hydrodynamics (FE-SPH) model was used to investigate how vibration parameters, such as frequency and amplitude, influence chip formation and morphology. This research is essential for determining the size and shape of silk fibroin particles, which are crucial for their effectiveness in drug delivery systems. The results demonstrate the superior capability of elliptical vibration micro-turning for producing shorter, spiral-shaped chips in the size range of tens of microns, in contrast to the long, continuous chips with zig-zag folds and segmented edges generated by conventional micro-turning. The unique zig-zag shapes result from the interplay between the high flexibility and hierarchical structure of silk fibroin and the controlled cutting environment provided by the diamond tool. Additionally, higher vibration frequencies and lower vertical amplitudes promote chip curling, facilitate breakage, and improve chip control, while reducing cutting forces. Experimental trials further validate the accuracy of the hybrid model. This study represents a significant advancement in the processing of silk fibroin film, offering a complementary approach to fabricating short, spiral-shaped silk fibroin particles with a high surface-area-to-volume ratio compared to traditional spheroids, which holds great potential for enhancing drug-loading efficiency in high-precision drug delivery systems.

{"title":"Investigation of Chip Morphology in Elliptical Vibration Micro-Turning of Silk Fibroin.","authors":"Zhengjian Wang, Xichun Luo, Jining Sun, Wenkun Xie, Yinchuan Piao, Yonghang Jiang, Xiuyuan Chen","doi":"10.3390/mi16010110","DOIUrl":"10.3390/mi16010110","url":null,"abstract":"<p><p>Silk fibroin, known for its biocompatibility and biodegradability, holds significant promise for biomedical applications, particularly in drug delivery systems. The precise fabrication of silk fibroin particles, specifically those ranging from tens of nanometres to hundreds of microns, is critical for these uses. This study introduces elliptical vibration micro-turning as a method for producing silk fibroin particles in the form of cutting chips to serve as carriers for drug delivery systems. A hybrid finite element and smoothed particle hydrodynamics (FE-SPH) model was used to investigate how vibration parameters, such as frequency and amplitude, influence chip formation and morphology. This research is essential for determining the size and shape of silk fibroin particles, which are crucial for their effectiveness in drug delivery systems. The results demonstrate the superior capability of elliptical vibration micro-turning for producing shorter, spiral-shaped chips in the size range of tens of microns, in contrast to the long, continuous chips with zig-zag folds and segmented edges generated by conventional micro-turning. The unique zig-zag shapes result from the interplay between the high flexibility and hierarchical structure of silk fibroin and the controlled cutting environment provided by the diamond tool. Additionally, higher vibration frequencies and lower vertical amplitudes promote chip curling, facilitate breakage, and improve chip control, while reducing cutting forces. Experimental trials further validate the accuracy of the hybrid model. This study represents a significant advancement in the processing of silk fibroin film, offering a complementary approach to fabricating short, spiral-shaped silk fibroin particles with a high surface-area-to-volume ratio compared to traditional spheroids, which holds great potential for enhancing drug-loading efficiency in high-precision drug delivery systems.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767461/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-Responsive Hybrid Composite with Zero Temperature Coefficient of Resistance for Wearable Thermotherapy Pads. 用于可穿戴热疗垫的零温度系数温度响应混合复合材料。
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-19 DOI: 10.3390/mi16010108
Ji-Yoon Ahn, Dong-Kwan Lee, Min-Gi Kim, Won-Jin Kim, Sung-Hoon Park

Carbon-based polymer composites are widely used in wearable devices due to their exceptional electrical conductivity and flexibility. However, their temperature-dependent resistance variations pose significant challenges to device safety and performance. A negative temperature coefficient (NTC) can lead to overcurrent risks, while a positive temperature coefficient (PTC) compromises accuracy. In this study, we present a novel hybrid composite combining carbon nanotubes (CNTs) with NTC properties and carbon black (CB) with PTC properties to achieve a near-zero temperature coefficient of resistance (TCR) at an optimal ratio. This innovation enhances the safety and reliability of carbon-based polymer composites for wearable heating applications. Furthermore, a thermochromic pigment layer is integrated into the hybrid composite, enabling visual temperature indication across three distinct zones. This bilayer structure not only addresses the TCR challenge but also provides real-time, user-friendly temperature monitoring. The resulting composite demonstrates consistent performance and high precision under diverse heating conditions, making it ideal for wearable thermotherapy pads. This study highlights a significant advancement in developing multifunctional, temperature-responsive materials, offering a promising solution for safer and more controllable wearable devices.

{"title":"Temperature-Responsive Hybrid Composite with Zero Temperature Coefficient of Resistance for Wearable Thermotherapy Pads.","authors":"Ji-Yoon Ahn, Dong-Kwan Lee, Min-Gi Kim, Won-Jin Kim, Sung-Hoon Park","doi":"10.3390/mi16010108","DOIUrl":"10.3390/mi16010108","url":null,"abstract":"<p><p>Carbon-based polymer composites are widely used in wearable devices due to their exceptional electrical conductivity and flexibility. However, their temperature-dependent resistance variations pose significant challenges to device safety and performance. A negative temperature coefficient (NTC) can lead to overcurrent risks, while a positive temperature coefficient (PTC) compromises accuracy. In this study, we present a novel hybrid composite combining carbon nanotubes (CNTs) with NTC properties and carbon black (CB) with PTC properties to achieve a near-zero temperature coefficient of resistance (TCR) at an optimal ratio. This innovation enhances the safety and reliability of carbon-based polymer composites for wearable heating applications. Furthermore, a thermochromic pigment layer is integrated into the hybrid composite, enabling visual temperature indication across three distinct zones. This bilayer structure not only addresses the TCR challenge but also provides real-time, user-friendly temperature monitoring. The resulting composite demonstrates consistent performance and high precision under diverse heating conditions, making it ideal for wearable thermotherapy pads. This study highlights a significant advancement in developing multifunctional, temperature-responsive materials, offering a promising solution for safer and more controllable wearable devices.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767656/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on Envelope Profile of Lithium Niobate on Insulator Stepped-Mode Spot Size Converter.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-19 DOI: 10.3390/mi16010109
Jianfeng Bao, Dengcai Yang, Zhiyu Chen, Jingyuan Zhang, Feng Yang

To enhance the end-face coupling efficiency of lithium niobate on insulator (LNOI) chips, in conjunction with current device fabrication processes, a stepped spot size converter (SSC) based on a special outer envelope profile has been proposed and investigated. This stepped SSC can reduce the coupling loss between the LNOI waveguide and a normal single-mode optical fiber. First, the output waveguide of a mode converter was proposed and simulated, in which the mode field had the biggest overlapping integral factor with a single-mode fiber (MDF ≈ 9.8 μm). Then, a stepped LNOI waveguide, the basic structure of the mode converter, with three kinds of outer envelope profile, was proposed and analyzed. Through analysis of the impacts of different envelope profiles on mode spot conversion efficiency, the relationship between envelope profile and propagation efficiency was obtained. Additionally, the rule of LNOI stair height variation tendency and the pattern of mode spot conversion efficiency for the multi-step mode spot converter in LNOI were obtained. Ultimately, a stepped SSC with a COS-shaped envelope curve was adopted. When this stepped SSC is coupled to single-mode fiber with a mode-field diameter of 9.8 μm, the coupling efficiency of the TE mode was 95.35% at the wavelength of 1550 nm.

{"title":"Research on Envelope Profile of Lithium Niobate on Insulator Stepped-Mode Spot Size Converter.","authors":"Jianfeng Bao, Dengcai Yang, Zhiyu Chen, Jingyuan Zhang, Feng Yang","doi":"10.3390/mi16010109","DOIUrl":"10.3390/mi16010109","url":null,"abstract":"<p><p>To enhance the end-face coupling efficiency of lithium niobate on insulator (LNOI) chips, in conjunction with current device fabrication processes, a stepped spot size converter (SSC) based on a special outer envelope profile has been proposed and investigated. This stepped SSC can reduce the coupling loss between the LNOI waveguide and a normal single-mode optical fiber. First, the output waveguide of a mode converter was proposed and simulated, in which the mode field had the biggest overlapping integral factor with a single-mode fiber (MDF ≈ 9.8 μm). Then, a stepped LNOI waveguide, the basic structure of the mode converter, with three kinds of outer envelope profile, was proposed and analyzed. Through analysis of the impacts of different envelope profiles on mode spot conversion efficiency, the relationship between envelope profile and propagation efficiency was obtained. Additionally, the rule of LNOI stair height variation tendency and the pattern of mode spot conversion efficiency for the multi-step mode spot converter in LNOI were obtained. Ultimately, a stepped SSC with a COS-shaped envelope curve was adopted. When this stepped SSC is coupled to single-mode fiber with a mode-field diameter of 9.8 μm, the coupling efficiency of the TE mode was 95.35% at the wavelength of 1550 nm.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767829/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-17 DOI: 10.3390/mi16010105
Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao

In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value. Furthermore, a p-GaN shield layer is also adopted as a junction termination extension to modulate the electric field around the trench bottom. By optimizing the device parameters, a normally-off GaN MOSFET with good performance is designed.

{"title":"Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth.","authors":"Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao","doi":"10.3390/mi16010105","DOIUrl":"10.3390/mi16010105","url":null,"abstract":"<p><p>In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value. Furthermore, a p-GaN shield layer is also adopted as a junction termination extension to modulate the electric field around the trench bottom. By optimizing the device parameters, a normally-off GaN MOSFET with good performance is designed.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767783/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-17 DOI: 10.3390/mi16010106
Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu

In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an Ion/Ioff ratio of more than seven orders of magnitude, with Ion reaching up to 2.56 × 10-4 A/μm, Ioff as low as 3.99 × 10-12 A/μm, and a threshold voltage reduced to -0.43 V, exhibiting excellent electrical characteristics. Furthermore, a new CMOS inverter comprising a proposed PJLFET and a conventional NMOSFET is designed. With the identical geometric dimensions and gate electrode, the pull-up and pull-down driving capabilities of the proposed CMOS are equivalent, showing the potential for application in high-performance chips in the future.

{"title":"Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.","authors":"Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu","doi":"10.3390/mi16010106","DOIUrl":"10.3390/mi16010106","url":null,"abstract":"<p><p>In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I<sub>on</sub>/I<sub>off</sub> ratio of more than seven orders of magnitude, with I<sub>on</sub> reaching up to 2.56 × 10<sup>-4</sup> A/μm, I<sub>off</sub> as low as 3.99 × 10<sup>-12</sup> A/μm, and a threshold voltage reduced to -0.43 V, exhibiting excellent electrical characteristics. Furthermore, a new CMOS inverter comprising a proposed PJLFET and a conventional NMOSFET is designed. With the identical geometric dimensions and gate electrode, the pull-up and pull-down driving capabilities of the proposed CMOS are equivalent, showing the potential for application in high-performance chips in the future.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767343/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Advances in Electromagnetic Devices: Design and Optimization.
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-16 DOI: 10.3390/mi16010098
Chanik Kang, Haejun Chung

Electromagnetic devices are a continuous driving force in cutting-edge research and technology, finding applications in diverse fields such as optics [...].

{"title":"Recent Advances in Electromagnetic Devices: Design and Optimization.","authors":"Chanik Kang, Haejun Chung","doi":"10.3390/mi16010098","DOIUrl":"10.3390/mi16010098","url":null,"abstract":"<p><p>Electromagnetic devices are a continuous driving force in cutting-edge research and technology, finding applications in diverse fields such as optics [...].</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767557/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low-Power General Matrix Multiplication Accelerator with Sparse Weight-and-Output Stationary Dataflow. 采用稀疏加权输出静态数据流的低功耗通用矩阵乘法加速器
IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Pub Date : 2025-01-16 DOI: 10.3390/mi16010101
Peng Liu, Yu Wang

General matrix multiplication (GEMM) in machine learning involves massive computation and data movement, which restricts its deployment on resource-constrained devices. Although data reuse can reduce data movement during GEMM processing, current approaches fail to fully exploit its potential. This work introduces a sparse GEMM accelerator with a weight-and-output stationary (WOS) dataflow and a distributed buffer architecture. It processes GEMM in a compressed format and eliminates on-chip transfers of both weights and partial sums. Furthermore, to map the compressed GEMM of various sizes onto the accelerator, an adaptable mapping scheme is designed. However, the irregular sparsity of weight matrices makes it difficult to store them in local buffers with the compressed format; denser vectors can exceed the buffer capacity, while sparser vectors may lead to the underutilization of buffers. To address this complication, this work also proposes an offline sparsity-aware shuffle strategy for weights, which balances the utilization of distributed buffers and minimizes buffer waste. Finally, a low-cost sparse computing method is applied to the WOS dataflow with globally shared inputs to achieve high computing throughput. Experiments with an FPGA show that the proposed accelerator achieves 1.73× better computing efficiency and 1.36× higher energy efficiency than existing approaches.

{"title":"A Low-Power General Matrix Multiplication Accelerator with Sparse Weight-and-Output Stationary Dataflow.","authors":"Peng Liu, Yu Wang","doi":"10.3390/mi16010101","DOIUrl":"10.3390/mi16010101","url":null,"abstract":"<p><p>General matrix multiplication (GEMM) in machine learning involves massive computation and data movement, which restricts its deployment on resource-constrained devices. Although data reuse can reduce data movement during GEMM processing, current approaches fail to fully exploit its potential. This work introduces a sparse GEMM accelerator with a weight-and-output stationary (WOS) dataflow and a distributed buffer architecture. It processes GEMM in a compressed format and eliminates on-chip transfers of both weights and partial sums. Furthermore, to map the compressed GEMM of various sizes onto the accelerator, an adaptable mapping scheme is designed. However, the irregular sparsity of weight matrices makes it difficult to store them in local buffers with the compressed format; denser vectors can exceed the buffer capacity, while sparser vectors may lead to the underutilization of buffers. To address this complication, this work also proposes an offline sparsity-aware shuffle strategy for weights, which balances the utilization of distributed buffers and minimizes buffer waste. Finally, a low-cost sparse computing method is applied to the WOS dataflow with globally shared inputs to achieve high computing throughput. Experiments with an FPGA show that the proposed accelerator achieves 1.73× better computing efficiency and 1.36× higher energy efficiency than existing approaches.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767631/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Micromachines
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1