Nirvana Gharib, Mohammad Reza Yousefi Darestani, Kenichi Takahata
This paper presents, for the first time, a rotary actuator functionalized by an inclined disc rotor that serves as a distal optical scanner for endoscopic probes, enabling side-viewing endoscopy in luminal organs using different imaging/analytic modalities such as optical coherence tomography and Raman spectroscopy. This scanner uses a magnetic rotor designed to have a mirror surface on its backside, being electromagnetically driven to roll around the cone-shaped hollow base to create a motion just like a precessing coin. An optical probing beam directed from the probe's optic fiber is passed through the hollow cone to be incident and bent on the back mirror of the rotating inclined rotor, circulating the probing beam around the scanner for full 360° sideway imaging. This new scanner architecture removes the need for a separate prism mirror and holding mechanics to drastically simplify the scanner design and thus, potentially enhancing device miniaturization and reliability. The first proof-of-concept is developed using 3D printing and experimentally analyzed to reveal the ability of both angular stepping at 45° and high-speed rotation up to 1500 rpm within the biologically safe temperature range, a key function for multimodal imaging. Preliminary optical testing demonstrates continuous circumferential scanning of the laser beam with no blind spot caused by power leads to the actuator. The results indicate the fundamental feasibility of the developed actuator as an endoscopic distal scanner, a significant step to further development toward advancing optical endoscope technology.
{"title":"A Precessing-Coin-like Rotary Actuator for Distal Endoscope Scanners: Proof-of-Concept Study.","authors":"Nirvana Gharib, Mohammad Reza Yousefi Darestani, Kenichi Takahata","doi":"10.3390/mi16010111","DOIUrl":"10.3390/mi16010111","url":null,"abstract":"<p><p>This paper presents, for the first time, a rotary actuator functionalized by an inclined disc rotor that serves as a distal optical scanner for endoscopic probes, enabling side-viewing endoscopy in luminal organs using different imaging/analytic modalities such as optical coherence tomography and Raman spectroscopy. This scanner uses a magnetic rotor designed to have a mirror surface on its backside, being electromagnetically driven to roll around the cone-shaped hollow base to create a motion just like a precessing coin. An optical probing beam directed from the probe's optic fiber is passed through the hollow cone to be incident and bent on the back mirror of the rotating inclined rotor, circulating the probing beam around the scanner for full 360° sideway imaging. This new scanner architecture removes the need for a separate prism mirror and holding mechanics to drastically simplify the scanner design and thus, potentially enhancing device miniaturization and reliability. The first proof-of-concept is developed using 3D printing and experimentally analyzed to reveal the ability of both angular stepping at 45° and high-speed rotation up to 1500 rpm within the biologically safe temperature range, a key function for multimodal imaging. Preliminary optical testing demonstrates continuous circumferential scanning of the laser beam with no blind spot caused by power leads to the actuator. The results indicate the fundamental feasibility of the developed actuator as an endoscopic distal scanner, a significant step to further development toward advancing optical endoscope technology.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767618/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, resonance phenomena of high-speed interconnects and power delivery networks in glass packages are measured and analyzed. The resonances are generated in the interconnection by the physical dimension, cancelation of reactance components, and modes. When the resonances are generated in the operation frequency band, the signal/power integrity of the interconnect can be affected. As such, resonances generated in high-speed interconnects increase insertion loss, which degrades signal integrity. Also, resonances of the power delivery network (PDN) associated with boundary conditions increase PDN impedance, which degrades power integrity by generating power/ground noise and return current discontinuity of through vias. Recently, glass packaging has been gaining more attention due to its advantages associated with low substrate loss and large dimensions compared to silicon wafers. However, the low loss of the substrate and process variation may affect the resonance properties of interconnects. The resonance impacts on signal/power integrity must be analyzed, and mitigation plans should be proposed to maximize the advantages of the glass packaging technology. To analyze the resonance impacts on signal/power integrity, various glass package test vehicles are designed and fabricated. The fabricated test vehicles include transmission lines, PDNs, and patterns to measure an interaction between the through via and PDN. First, transmission line patterns that have 50-ohm characteristic impedance are measured. Due to the process variations, quarter-wave resonances are monitored, and at those frequencies, a sharp increase in insertion loss is observed, which deteriorates the signal integrity of the interconnect. Various PDN patterns are measured in the frequency domain, and regardless of the PDN shape, PDN impedance peaks are observed at the mode resonance frequencies. Due to a low-loss characteristic of the glass substrate, sharp PDN impedance peaks are generated at these frequencies. Also, at these frequencies, both signal and power integrity degradations are measured and analyzed. To fully benefit from the advantages of glass packaging technology, a thorough electrical performance analysis should be conducted to avoid resonances in the target frequency range.
{"title":"Measurement and Analysis of Interconnects' Resonance and Signal/Power Integrity Degradation in Glass Packages.","authors":"Youngwoo Kim","doi":"10.3390/mi16010112","DOIUrl":"10.3390/mi16010112","url":null,"abstract":"<p><p>In this article, resonance phenomena of high-speed interconnects and power delivery networks in glass packages are measured and analyzed. The resonances are generated in the interconnection by the physical dimension, cancelation of reactance components, and modes. When the resonances are generated in the operation frequency band, the signal/power integrity of the interconnect can be affected. As such, resonances generated in high-speed interconnects increase insertion loss, which degrades signal integrity. Also, resonances of the power delivery network (PDN) associated with boundary conditions increase PDN impedance, which degrades power integrity by generating power/ground noise and return current discontinuity of through vias. Recently, glass packaging has been gaining more attention due to its advantages associated with low substrate loss and large dimensions compared to silicon wafers. However, the low loss of the substrate and process variation may affect the resonance properties of interconnects. The resonance impacts on signal/power integrity must be analyzed, and mitigation plans should be proposed to maximize the advantages of the glass packaging technology. To analyze the resonance impacts on signal/power integrity, various glass package test vehicles are designed and fabricated. The fabricated test vehicles include transmission lines, PDNs, and patterns to measure an interaction between the through via and PDN. First, transmission line patterns that have 50-ohm characteristic impedance are measured. Due to the process variations, quarter-wave resonances are monitored, and at those frequencies, a sharp increase in insertion loss is observed, which deteriorates the signal integrity of the interconnect. Various PDN patterns are measured in the frequency domain, and regardless of the PDN shape, PDN impedance peaks are observed at the mode resonance frequencies. Due to a low-loss characteristic of the glass substrate, sharp PDN impedance peaks are generated at these frequencies. Also, at these frequencies, both signal and power integrity degradations are measured and analyzed. To fully benefit from the advantages of glass packaging technology, a thorough electrical performance analysis should be conducted to avoid resonances in the target frequency range.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767268/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dielectric elastomer actuators (DEAs) are difficult to apply to flexible grippers due to their small deformation range and low output force. Hence, a DEA with a large bending deformation range and output force was designed, and a corresponding flexible gripper was developed to realize the function of grasping objects of different shapes. The relationship between the pre-stretch ratio and DEA deformation degree was tested by experiments. Based on the performance test results of the dielectric elastomer (DE), the bending deformation process of DEAs with different shapes was simulated by Finite Element Method (FEM) simulation. DEAs with different shapes were prepared through laser cutting and the relationship between the voltage and the bending angle, and the output force of the DEAs was measured. The result shows that under uniaxial stretching, the deformation of the DEA in the stretching direction gradually increases and decreases in the unstretched direction with the increase in the pre-stretch ratio. Under biaxial stretching, DEA deformation increases with the increase in the pre-stretch ratio. The shape of the DEA has a certain influence on the bending deformation range under the same conditions, and the elliptical DEA has a larger bending deformation range and higher output force compared with the rectangular DEA and the trapezium DEA. The elliptical DEA can produce a bending deformation of 40° and an output force of 37.2 mN at a voltage of 24 kV. The three-finger flexible gripper composed of an elliptical DEA can realize the grasping of a paper cup.
{"title":"Design of Dielectric Elastomer Actuator and Its Application in Flexible Gripper.","authors":"Xiaoyu Meng, Jiaqing Xie, Haoran Pang, Wenchao Wei, Jiping Niu, Mingqiang Zhu, Fang Gu, Xiaohuan Fan, Haiyan Fan","doi":"10.3390/mi16010107","DOIUrl":"10.3390/mi16010107","url":null,"abstract":"<p><p>Dielectric elastomer actuators (DEAs) are difficult to apply to flexible grippers due to their small deformation range and low output force. Hence, a DEA with a large bending deformation range and output force was designed, and a corresponding flexible gripper was developed to realize the function of grasping objects of different shapes. The relationship between the pre-stretch ratio and DEA deformation degree was tested by experiments. Based on the performance test results of the dielectric elastomer (DE), the bending deformation process of DEAs with different shapes was simulated by Finite Element Method (FEM) simulation. DEAs with different shapes were prepared through laser cutting and the relationship between the voltage and the bending angle, and the output force of the DEAs was measured. The result shows that under uniaxial stretching, the deformation of the DEA in the stretching direction gradually increases and decreases in the unstretched direction with the increase in the pre-stretch ratio. Under biaxial stretching, DEA deformation increases with the increase in the pre-stretch ratio. The shape of the DEA has a certain influence on the bending deformation range under the same conditions, and the elliptical DEA has a larger bending deformation range and higher output force compared with the rectangular DEA and the trapezium DEA. The elliptical DEA can produce a bending deformation of 40° and an output force of 37.2 mN at a voltage of 24 kV. The three-finger flexible gripper composed of an elliptical DEA can realize the grasping of a paper cup.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767311/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silk fibroin, known for its biocompatibility and biodegradability, holds significant promise for biomedical applications, particularly in drug delivery systems. The precise fabrication of silk fibroin particles, specifically those ranging from tens of nanometres to hundreds of microns, is critical for these uses. This study introduces elliptical vibration micro-turning as a method for producing silk fibroin particles in the form of cutting chips to serve as carriers for drug delivery systems. A hybrid finite element and smoothed particle hydrodynamics (FE-SPH) model was used to investigate how vibration parameters, such as frequency and amplitude, influence chip formation and morphology. This research is essential for determining the size and shape of silk fibroin particles, which are crucial for their effectiveness in drug delivery systems. The results demonstrate the superior capability of elliptical vibration micro-turning for producing shorter, spiral-shaped chips in the size range of tens of microns, in contrast to the long, continuous chips with zig-zag folds and segmented edges generated by conventional micro-turning. The unique zig-zag shapes result from the interplay between the high flexibility and hierarchical structure of silk fibroin and the controlled cutting environment provided by the diamond tool. Additionally, higher vibration frequencies and lower vertical amplitudes promote chip curling, facilitate breakage, and improve chip control, while reducing cutting forces. Experimental trials further validate the accuracy of the hybrid model. This study represents a significant advancement in the processing of silk fibroin film, offering a complementary approach to fabricating short, spiral-shaped silk fibroin particles with a high surface-area-to-volume ratio compared to traditional spheroids, which holds great potential for enhancing drug-loading efficiency in high-precision drug delivery systems.
{"title":"Investigation of Chip Morphology in Elliptical Vibration Micro-Turning of Silk Fibroin.","authors":"Zhengjian Wang, Xichun Luo, Jining Sun, Wenkun Xie, Yinchuan Piao, Yonghang Jiang, Xiuyuan Chen","doi":"10.3390/mi16010110","DOIUrl":"10.3390/mi16010110","url":null,"abstract":"<p><p>Silk fibroin, known for its biocompatibility and biodegradability, holds significant promise for biomedical applications, particularly in drug delivery systems. The precise fabrication of silk fibroin particles, specifically those ranging from tens of nanometres to hundreds of microns, is critical for these uses. This study introduces elliptical vibration micro-turning as a method for producing silk fibroin particles in the form of cutting chips to serve as carriers for drug delivery systems. A hybrid finite element and smoothed particle hydrodynamics (FE-SPH) model was used to investigate how vibration parameters, such as frequency and amplitude, influence chip formation and morphology. This research is essential for determining the size and shape of silk fibroin particles, which are crucial for their effectiveness in drug delivery systems. The results demonstrate the superior capability of elliptical vibration micro-turning for producing shorter, spiral-shaped chips in the size range of tens of microns, in contrast to the long, continuous chips with zig-zag folds and segmented edges generated by conventional micro-turning. The unique zig-zag shapes result from the interplay between the high flexibility and hierarchical structure of silk fibroin and the controlled cutting environment provided by the diamond tool. Additionally, higher vibration frequencies and lower vertical amplitudes promote chip curling, facilitate breakage, and improve chip control, while reducing cutting forces. Experimental trials further validate the accuracy of the hybrid model. This study represents a significant advancement in the processing of silk fibroin film, offering a complementary approach to fabricating short, spiral-shaped silk fibroin particles with a high surface-area-to-volume ratio compared to traditional spheroids, which holds great potential for enhancing drug-loading efficiency in high-precision drug delivery systems.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767461/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ji-Yoon Ahn, Dong-Kwan Lee, Min-Gi Kim, Won-Jin Kim, Sung-Hoon Park
Carbon-based polymer composites are widely used in wearable devices due to their exceptional electrical conductivity and flexibility. However, their temperature-dependent resistance variations pose significant challenges to device safety and performance. A negative temperature coefficient (NTC) can lead to overcurrent risks, while a positive temperature coefficient (PTC) compromises accuracy. In this study, we present a novel hybrid composite combining carbon nanotubes (CNTs) with NTC properties and carbon black (CB) with PTC properties to achieve a near-zero temperature coefficient of resistance (TCR) at an optimal ratio. This innovation enhances the safety and reliability of carbon-based polymer composites for wearable heating applications. Furthermore, a thermochromic pigment layer is integrated into the hybrid composite, enabling visual temperature indication across three distinct zones. This bilayer structure not only addresses the TCR challenge but also provides real-time, user-friendly temperature monitoring. The resulting composite demonstrates consistent performance and high precision under diverse heating conditions, making it ideal for wearable thermotherapy pads. This study highlights a significant advancement in developing multifunctional, temperature-responsive materials, offering a promising solution for safer and more controllable wearable devices.
{"title":"Temperature-Responsive Hybrid Composite with Zero Temperature Coefficient of Resistance for Wearable Thermotherapy Pads.","authors":"Ji-Yoon Ahn, Dong-Kwan Lee, Min-Gi Kim, Won-Jin Kim, Sung-Hoon Park","doi":"10.3390/mi16010108","DOIUrl":"10.3390/mi16010108","url":null,"abstract":"<p><p>Carbon-based polymer composites are widely used in wearable devices due to their exceptional electrical conductivity and flexibility. However, their temperature-dependent resistance variations pose significant challenges to device safety and performance. A negative temperature coefficient (NTC) can lead to overcurrent risks, while a positive temperature coefficient (PTC) compromises accuracy. In this study, we present a novel hybrid composite combining carbon nanotubes (CNTs) with NTC properties and carbon black (CB) with PTC properties to achieve a near-zero temperature coefficient of resistance (TCR) at an optimal ratio. This innovation enhances the safety and reliability of carbon-based polymer composites for wearable heating applications. Furthermore, a thermochromic pigment layer is integrated into the hybrid composite, enabling visual temperature indication across three distinct zones. This bilayer structure not only addresses the TCR challenge but also provides real-time, user-friendly temperature monitoring. The resulting composite demonstrates consistent performance and high precision under diverse heating conditions, making it ideal for wearable thermotherapy pads. This study highlights a significant advancement in developing multifunctional, temperature-responsive materials, offering a promising solution for safer and more controllable wearable devices.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767656/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jianfeng Bao, Dengcai Yang, Zhiyu Chen, Jingyuan Zhang, Feng Yang
To enhance the end-face coupling efficiency of lithium niobate on insulator (LNOI) chips, in conjunction with current device fabrication processes, a stepped spot size converter (SSC) based on a special outer envelope profile has been proposed and investigated. This stepped SSC can reduce the coupling loss between the LNOI waveguide and a normal single-mode optical fiber. First, the output waveguide of a mode converter was proposed and simulated, in which the mode field had the biggest overlapping integral factor with a single-mode fiber (MDF ≈ 9.8 μm). Then, a stepped LNOI waveguide, the basic structure of the mode converter, with three kinds of outer envelope profile, was proposed and analyzed. Through analysis of the impacts of different envelope profiles on mode spot conversion efficiency, the relationship between envelope profile and propagation efficiency was obtained. Additionally, the rule of LNOI stair height variation tendency and the pattern of mode spot conversion efficiency for the multi-step mode spot converter in LNOI were obtained. Ultimately, a stepped SSC with a COS-shaped envelope curve was adopted. When this stepped SSC is coupled to single-mode fiber with a mode-field diameter of 9.8 μm, the coupling efficiency of the TE mode was 95.35% at the wavelength of 1550 nm.
{"title":"Research on Envelope Profile of Lithium Niobate on Insulator Stepped-Mode Spot Size Converter.","authors":"Jianfeng Bao, Dengcai Yang, Zhiyu Chen, Jingyuan Zhang, Feng Yang","doi":"10.3390/mi16010109","DOIUrl":"10.3390/mi16010109","url":null,"abstract":"<p><p>To enhance the end-face coupling efficiency of lithium niobate on insulator (LNOI) chips, in conjunction with current device fabrication processes, a stepped spot size converter (SSC) based on a special outer envelope profile has been proposed and investigated. This stepped SSC can reduce the coupling loss between the LNOI waveguide and a normal single-mode optical fiber. First, the output waveguide of a mode converter was proposed and simulated, in which the mode field had the biggest overlapping integral factor with a single-mode fiber (MDF ≈ 9.8 μm). Then, a stepped LNOI waveguide, the basic structure of the mode converter, with three kinds of outer envelope profile, was proposed and analyzed. Through analysis of the impacts of different envelope profiles on mode spot conversion efficiency, the relationship between envelope profile and propagation efficiency was obtained. Additionally, the rule of LNOI stair height variation tendency and the pattern of mode spot conversion efficiency for the multi-step mode spot converter in LNOI were obtained. Ultimately, a stepped SSC with a COS-shaped envelope curve was adopted. When this stepped SSC is coupled to single-mode fiber with a mode-field diameter of 9.8 μm, the coupling efficiency of the TE mode was 95.35% at the wavelength of 1550 nm.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767829/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value. Furthermore, a p-GaN shield layer is also adopted as a junction termination extension to modulate the electric field around the trench bottom. By optimizing the device parameters, a normally-off GaN MOSFET with good performance is designed.
{"title":"Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth.","authors":"Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao","doi":"10.3390/mi16010105","DOIUrl":"10.3390/mi16010105","url":null,"abstract":"<p><p>In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value. Furthermore, a p-GaN shield layer is also adopted as a junction termination extension to modulate the electric field around the trench bottom. By optimizing the device parameters, a normally-off GaN MOSFET with good performance is designed.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767783/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an Ion/Ioff ratio of more than seven orders of magnitude, with Ion reaching up to 2.56 × 10-4 A/μm, Ioff as low as 3.99 × 10-12 A/μm, and a threshold voltage reduced to -0.43 V, exhibiting excellent electrical characteristics. Furthermore, a new CMOS inverter comprising a proposed PJLFET and a conventional NMOSFET is designed. With the identical geometric dimensions and gate electrode, the pull-up and pull-down driving capabilities of the proposed CMOS are equivalent, showing the potential for application in high-performance chips in the future.
{"title":"Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.","authors":"Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu","doi":"10.3390/mi16010106","DOIUrl":"10.3390/mi16010106","url":null,"abstract":"<p><p>In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I<sub>on</sub>/I<sub>off</sub> ratio of more than seven orders of magnitude, with I<sub>on</sub> reaching up to 2.56 × 10<sup>-4</sup> A/μm, I<sub>off</sub> as low as 3.99 × 10<sup>-12</sup> A/μm, and a threshold voltage reduced to -0.43 V, exhibiting excellent electrical characteristics. Furthermore, a new CMOS inverter comprising a proposed PJLFET and a conventional NMOSFET is designed. With the identical geometric dimensions and gate electrode, the pull-up and pull-down driving capabilities of the proposed CMOS are equivalent, showing the potential for application in high-performance chips in the future.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767343/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electromagnetic devices are a continuous driving force in cutting-edge research and technology, finding applications in diverse fields such as optics [...].
{"title":"Recent Advances in Electromagnetic Devices: Design and Optimization.","authors":"Chanik Kang, Haejun Chung","doi":"10.3390/mi16010098","DOIUrl":"10.3390/mi16010098","url":null,"abstract":"<p><p>Electromagnetic devices are a continuous driving force in cutting-edge research and technology, finding applications in diverse fields such as optics [...].</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767557/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
General matrix multiplication (GEMM) in machine learning involves massive computation and data movement, which restricts its deployment on resource-constrained devices. Although data reuse can reduce data movement during GEMM processing, current approaches fail to fully exploit its potential. This work introduces a sparse GEMM accelerator with a weight-and-output stationary (WOS) dataflow and a distributed buffer architecture. It processes GEMM in a compressed format and eliminates on-chip transfers of both weights and partial sums. Furthermore, to map the compressed GEMM of various sizes onto the accelerator, an adaptable mapping scheme is designed. However, the irregular sparsity of weight matrices makes it difficult to store them in local buffers with the compressed format; denser vectors can exceed the buffer capacity, while sparser vectors may lead to the underutilization of buffers. To address this complication, this work also proposes an offline sparsity-aware shuffle strategy for weights, which balances the utilization of distributed buffers and minimizes buffer waste. Finally, a low-cost sparse computing method is applied to the WOS dataflow with globally shared inputs to achieve high computing throughput. Experiments with an FPGA show that the proposed accelerator achieves 1.73× better computing efficiency and 1.36× higher energy efficiency than existing approaches.
{"title":"A Low-Power General Matrix Multiplication Accelerator with Sparse Weight-and-Output Stationary Dataflow.","authors":"Peng Liu, Yu Wang","doi":"10.3390/mi16010101","DOIUrl":"10.3390/mi16010101","url":null,"abstract":"<p><p>General matrix multiplication (GEMM) in machine learning involves massive computation and data movement, which restricts its deployment on resource-constrained devices. Although data reuse can reduce data movement during GEMM processing, current approaches fail to fully exploit its potential. This work introduces a sparse GEMM accelerator with a weight-and-output stationary (WOS) dataflow and a distributed buffer architecture. It processes GEMM in a compressed format and eliminates on-chip transfers of both weights and partial sums. Furthermore, to map the compressed GEMM of various sizes onto the accelerator, an adaptable mapping scheme is designed. However, the irregular sparsity of weight matrices makes it difficult to store them in local buffers with the compressed format; denser vectors can exceed the buffer capacity, while sparser vectors may lead to the underutilization of buffers. To address this complication, this work also proposes an offline sparsity-aware shuffle strategy for weights, which balances the utilization of distributed buffers and minimizes buffer waste. Finally, a low-cost sparse computing method is applied to the WOS dataflow with globally shared inputs to achieve high computing throughput. Experiments with an FPGA show that the proposed accelerator achieves 1.73× better computing efficiency and 1.36× higher energy efficiency than existing approaches.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767631/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}