Fabrication of conductive Nb-doped anatase TiO2 thin films by mist chemical vapor deposition using aqueous solutions of water-soluble Ti and Nb compounds

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-04-15 DOI:10.35848/1347-4065/ad31d6
Rento Naito, Megumi Ariga, Kaede Makiuchi, Ayaka Nakamura, Tomohito Sudare, Ryo Nakayama, Ryota Shimizu, Kentaro Kaneko, Yasushi Sato, Taro Hitosugi, Naoomi Yamada
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Abstract

Electrically conductive Nb-doped anatase TiO2 (Ti1−x Nb x O2: TNO) films can be fabricated through mist CVD using aqueous precursor solutions of water-soluble oxo-peroxo-glycolato titanium complex and ammonium niobium oxalate. Post-deposition annealing in vacuum crystallizes the as-deposited amorphous films into a conductive anatase phase, leading to the fabrication of conductive TNO films. Notably, the addition of H2O2 to the precursor solutions enhances both the crystallinity and conductivity of the annealed TNO films. A Ti0.77N0.23O2 film, annealed at 700 °C, exhibits a resistivity of 2.0 × 10−2 Ω cm at ambient temperature. In general, the solution-based fabrication of TiO2 films relies on organic solvents, which are sometimes toxic and explosive. Here, we demonstrate for the first time that conductive TNO films can be prepared from less toxic and nonflammable aqueous solutions. These findings mark a significant advancement towards a more environmentally compatible process for fabricating TNO films with sufficient conductivity.
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利用水溶性钛和铌化合物的水溶液,通过雾状化学气相沉积法制造掺杂铌的锐钛矿二氧化钛导电薄膜
利用水溶性氧代过氧甘醇钛络合物和草酸铌铵的水性前驱体溶液,可通过雾状 CVD 技术制造出掺铌锐钛矿二氧化钛(Ti1-xNbxO2:TNO)导电薄膜。沉积后在真空中退火可使沉积的无定形薄膜结晶成导电的锐钛矿相,从而制造出导电的 TNO 薄膜。值得注意的是,在前驱体溶液中加入 H2O2 可以提高退火后 TNO 薄膜的结晶度和导电性。在 700 °C 下退火的 Ti0.77N0.23O2 薄膜在环境温度下的电阻率为 2.0 × 10-2 Ω cm。一般来说,基于溶液的二氧化钛薄膜制造依赖于有机溶剂,而有机溶剂有时是有毒和易爆的。在这里,我们首次证明,导电的 TNO 薄膜可以用毒性较低且不易燃的水溶液制备。这些发现标志着我们在制造具有足够导电性的 TNO 薄膜的过程中,在环保方面取得了重大进展。
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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