Building a realistic, scalable memory model with independent engrams using a homeostatic mechanism

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS ACS Applied Bio Materials Pub Date : 2024-04-19 DOI:10.3389/fninf.2024.1323203
Marvin Kaster, Fabian Czappa, Markus Butz-Ostendorf, Felix Wolf
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Abstract

Memory formation is usually associated with Hebbian learning and synaptic plasticity, which changes the synaptic strengths but omits structural changes. A recent study suggests that structural plasticity can also lead to silent memory engrams, reproducing a conditioned learning paradigm with neuron ensembles. However, this study is limited by its way of synapse formation, enabling the formation of only one memory engram. Overcoming this, our model allows the formation of many engrams simultaneously while retaining high neurophysiological accuracy, e.g., as found in cortical columns. We achieve this by substituting the random synapse formation with the Model of Structural Plasticity. As a homeostatic model, neurons regulate their activity by growing and pruning synaptic elements based on their current activity. Utilizing synapse formation based on the Euclidean distance between the neurons with a scalable algorithm allows us to easily simulate 4 million neurons with 343 memory engrams. These engrams do not interfere with one another by default, yet we can change the simulation parameters to form long-reaching associations. Our model's analysis shows that homeostatic engram formation requires a certain spatiotemporal order of events. It predicts that synaptic pruning precedes and enables synaptic engram formation and that it does not occur as a mere compensatory response to enduring synapse potentiation as in Hebbian plasticity with synaptic scaling. Our model paves the way for simulations addressing further inquiries, ranging from memory chains and hierarchies to complex memory systems comprising areas with different learning mechanisms.
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利用同态复仇机制建立具有独立刻痕的可扩展现实记忆模型
记忆的形成通常与希比学习和突触可塑性有关,突触可塑性会改变突触强度,但不会改变结构。最近的一项研究表明,结构可塑性也能导致无声记忆刻痕,它再现了神经元集合的条件学习范式。然而,这项研究受到了突触形成方式的限制,只能形成一个记忆片段。为了克服这一问题,我们的模型允许同时形成多个记忆片段,同时保持较高的神经生理学精确度,例如在皮层柱中发现的精确度。我们通过用结构可塑性模型取代随机突触形成来实现这一点。作为一种平衡模型,神经元根据其当前的活动,通过生长和修剪突触元件来调节其活动。利用基于神经元之间欧氏距离的突触形成和可扩展算法,我们可以轻松模拟 400 万个神经元和 343 个记忆片段。这些记忆片段在默认情况下不会相互干扰,但我们可以通过改变模拟参数来形成影响深远的关联。我们的模型分析表明,同态记忆片段的形成需要一定的时空顺序。该模型预测,突触修剪先于突触刻痕的形成,并使突触刻痕的形成成为可能,而且突触修剪不会像具有突触缩放的希比可塑性那样,仅仅作为对持久突触电位的补偿反应而发生。我们的模型为模拟解决进一步的问题铺平了道路,这些问题包括记忆链和层次结构,以及由具有不同学习机制的区域组成的复杂记忆系统。
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来源期刊
ACS Applied Bio Materials
ACS Applied Bio Materials Chemistry-Chemistry (all)
CiteScore
9.40
自引率
2.10%
发文量
464
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