Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 1. Temperature measurements

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-04-16 DOI:10.1016/j.jcrysgro.2024.127704
Michio Kida, Toshinori Taishi
{"title":"Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 1. Temperature measurements","authors":"Michio Kida,&nbsp;Toshinori Taishi","doi":"10.1016/j.jcrysgro.2024.127704","DOIUrl":null,"url":null,"abstract":"<div><p>Relation between temperature distribution in a crucible and size of poly-silicon chunks is investigated in a melting process of silicon Czochralski (CZ) method. Five kinds of feedstocks with a different size are heated up to about 1,000 °C in a crucible and the temperature distributions and thermal gradients are measured with six thermocouples. Two sizes of commercial poly-silicon chunks and three sizes of cylindrical graphite pellets are tested. The result is that the lager the particle size is, the lager the thermal conductivity is for both poly-silicon chunks and graphite pellets. Averaged sizes of clashed poly-silicon are defined and measured, and also void porosities in various samples are measured. The results of these measurements are to be used in comparisons with numerical simulations in the article Part 2.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001398","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
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Abstract

Relation between temperature distribution in a crucible and size of poly-silicon chunks is investigated in a melting process of silicon Czochralski (CZ) method. Five kinds of feedstocks with a different size are heated up to about 1,000 °C in a crucible and the temperature distributions and thermal gradients are measured with six thermocouples. Two sizes of commercial poly-silicon chunks and three sizes of cylindrical graphite pellets are tested. The result is that the lager the particle size is, the lager the thermal conductivity is for both poly-silicon chunks and graphite pellets. Averaged sizes of clashed poly-silicon are defined and measured, and also void porosities in various samples are measured. The results of these measurements are to be used in comparisons with numerical simulations in the article Part 2.

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硅 Czochralski 晶体生长熔化过程中多晶硅块的有效热导率及其尺寸依赖性:第 1 部分:温度测量温度测量
在硅 Czochralski(CZ)法熔炼过程中,研究了坩埚中的温度分布与多晶硅块尺寸之间的关系。在坩埚中将五种不同尺寸的原料加热至约 1,000 °C,并用六个热电偶测量温度分布和热梯度。测试了两种尺寸的商用多晶硅块和三种尺寸的圆柱形石墨颗粒。结果表明,多晶硅块和石墨颗粒的粒度越小,导热系数越小。对碰撞多晶硅的平均尺寸进行了定义和测量,还测量了各种样品的空隙率。这些测量结果将用于文章第 2 部分中与数值模拟的比较。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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