Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance

IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Science: Advanced Materials and Devices Pub Date : 2024-04-16 DOI:10.1016/j.jsamd.2024.100722
Ming-Jie Zhao , Yao-Tian Wang , Jia-Hao Yan , Hai-Cheng Li , Hua Xu , Dong-Sing Wuu , Wan-Yu Wu , Feng-Min Lai , Shui-Yang Lien , Wen-Zhang Zhu
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Abstract

High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and preferentially (−1 1 1)-orientated. When the oxygen supply increased from 1% to 3%, the excitation/ionization rate of the plasma species increased, leading to higher crystallinity, higher density, and lower oxygen vacancy defect concentration of the film, therefore improving the dielectric properties of the film. When the oxygen supply further increased to 5%, the excitation/ionization rate decreased, thereby leading to lower crystallinity, lower density, and higher oxygen vacancy defect concentration of the film, therefore deteriorating the dielectric properties of the film. The film deposited at 3% oxygen supply exhibited the best dielectric properties with the highest k value of 24 and the highest breakdown-electric field (4.7 MV/cm), which should be attributed to the high crystallinity, high density and low oxygen vacancy defect concentration of the film. Finally, transparent thin film transistors (TFTs) with ITO gate electrode, HfO2 gate dielectric layer and indium-gallium-zinc oxide channel were fabricated on flexible colorless polyimide substrate at full room temperature by all HiPIMS process. The fixed positive charges and k value of HfO2 film have significant effects on the TFT performance. The best TFT exhibited good electrical performance, featuring a remarkably low subthreshold swing of 0.13 V/decade. It also exhibited fair stability against bending and gate bias stress.

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不同 O2/Ar 比率下 HiPIMS 制备的氧化铪薄膜的介电性能及其对 TFT 性能的影响
通过高功率脉冲磁控溅射(HiPIMS)制备了高k氧化铪(HfO2)薄膜。研究了氧气供应对等离子体状态、薄膜特性和 TFT 性能的影响。薄膜接近于化学计量,并优先呈(-1 1 1)取向。当供氧量从 1% 增加到 3% 时,等离子体物种的激发/电离率增加,导致薄膜的结晶度提高、密度增加、氧空位缺陷浓度降低,从而改善了薄膜的介电性能。当供氧量进一步增加到 5%时,激发/电离率降低,从而导致薄膜的结晶度降低、密度降低和氧空位缺陷浓度升高,因此薄膜的介电性能变差。在 3% 供氧条件下沉积的薄膜具有最好的介电性能,k 值最高,为 24,击穿电场最高(4.7 MV/cm),这应归功于薄膜的高结晶度、高密度和低氧空位缺陷浓度。最后,采用全 HiPIMS 工艺在全室温柔性无色聚酰亚胺衬底上制作了具有 ITO 栅极、HfO2 栅极介电层和铟镓锌氧化物沟道的透明薄膜晶体管(TFT)。HfO2 薄膜的固定正电荷和 k 值对 TFT 性能有显著影响。最好的 TFT 具有良好的电气性能,阈下摆幅低至 0.13 V/decade。此外,它对弯曲和栅极偏压应力也表现出相当的稳定性。
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来源期刊
Journal of Science: Advanced Materials and Devices
Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
11.90
自引率
2.50%
发文量
88
审稿时长
47 days
期刊介绍: In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.
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