Haruna Kaneko, Rikuto Ota, Keito Kobayashi, S. Kanai, M. Elyasi, Gerrit Bauer, Hideo Ohno, Shunsuke Fukami
{"title":"Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization","authors":"Haruna Kaneko, Rikuto Ota, Keito Kobayashi, S. Kanai, M. Elyasi, Gerrit Bauer, Hideo Ohno, Shunsuke Fukami","doi":"10.35848/1882-0786/ad43b0","DOIUrl":null,"url":null,"abstract":"\n Stochastic magnetic tunnel junctions (s-MTJs) attract attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance 〈R〉 of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H\n \n z\n and temperatures T=20-130°C. We observe that both relaxation time (time-domain response) and the slope of the 〈R〉-H\n \n z\n curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"54 7","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad43b0","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Stochastic magnetic tunnel junctions (s-MTJs) attract attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance 〈R〉 of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H
z
and temperatures T=20-130°C. We observe that both relaxation time (time-domain response) and the slope of the 〈R〉-H
z
curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.
随机磁隧道结（s-MTJs）作为基于自旋电子学的概率计算机（p-）的关键元件备受关注。p 型计算机的性能取决于单个 s-MTJ 随温度变化的时域和时间平均响应。在此，我们展示了具有垂直磁化的 s-MTJ 的时域（射频）电压和时间平均（直流）电阻〈R〉与垂直磁场 H z 和温度 T=20-130°C 的函数关系。我们观察到，弛豫时间（时域响应）和〈R〉-H z 曲线的斜率（时间平均响应）都随着温度的升高而减小。我们讨论了这些结果背后的物理学原理，包括热诱导的空间非均匀集体自旋动力学。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
